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    Predistorter for compensating linearity of an amplifier
    111.
    发明授权
    Predistorter for compensating linearity of an amplifier 有权

    公开(公告)号：US10381987B2

    公开(公告)日：2019-08-13

    申请号：US15805125

    申请日：2017-11-06

    Applicant: RichWave Technology Corp.

    Inventor： Chih-Sheng Chen ,  Pei-Chuan Hsieh

    IPC: H03F1/32 ,  H03F3/21 ,  H03F1/02 ,  H03F3/19

    Abstract: A predistorter has a first capacitor and an impedance conversion circuit. A first end of the first capacitor is coupled to a first node of the amplifier. The impedance conversion circuit is used to perform an impedance conversion to provide a variable capacitance. The impedance conversion circuit has a first bias input circuit and a bipolar junction transistor (BJT). The first bias input circuit is used to receive a first input bias. A base of the BJT is coupled to an output end of the first bias input circuit and a second end of the first capacitor, a collector of the BJT is floating, and an emitter of the BJT is coupled to a second node of the amplifier.

    Switch device with a wide bandwidth
    112.
    发明授权
    Switch device with a wide bandwidth 有权

    公开(公告)号：US10340704B2

    公开(公告)日：2019-07-02

    申请号：US15404215

    申请日：2017-01-12

    Applicant: RichWave Technology Corp.

    Inventor： Chih-Sheng Chen ,  Ching-Wen Hsu

    IPC: H03K17/16 ,  H04B1/44 ,  H01P1/15 ,  H02J4/00 ,  H03K17/693

    Abstract: A switch device includes a common terminal and a selection circuit. The selection circuit includes a primary switch, a first secondary switch, and a second secondary switch. The primary switch includes a plurality of primary transistors coupled in series and is coupled to the common terminal. The first secondary switch is coupled to the primary switch and a first transmission terminal. The first secondary switch includes a plurality of first secondary transistors coupled in series. The second secondary switch is coupled to the primary switch and a second transmission terminal. The second secondary switch includes a plurality of second secondary transistors coupled in series. The number of the first secondary transistors and the number of the second secondary transistors are both greater than or equal to the number of the primary transistors.

    Signal detector including a set of resistors and a collection unit for generating a detection signal
    114.
    发明授权
    Signal detector including a set of resistors and a collection unit for generating a detection signal 有权

    公开(公告)号：US10135393B2

    公开(公告)日：2018-11-20

    申请号：US15658409

    申请日：2017-07-25

    Applicant: RichWave Technology Corp.

    Inventor： Hwey-Ching Chien

    IPC: H03G3/20 ,  H03F1/02 ,  H03F3/04 ,  G01R19/00

    Abstract: A signal detector includes a signal input terminal, N first resistors, (N−1) second resistors, a third resistor, M voltage-to-current units and a collection unit. A first terminal of a 1st first resistor is coupled to the signal input terminal. A first terminal of an ith first resistor is coupled to a second terminal of an (i−1)th first resistor. A first terminal of a kth second resistor is coupled to a second terminal of a kth first resistor. A second terminal of each second resistor is coupled to a reference voltage terminal. The third resistor is coupled between the reference voltage terminal and a second terminal of an Nth first resistor. Each voltage-to-current unit is coupled to a first terminal of a corresponding first resistor for converting a corresponding detection voltage to a detection current. The collection unit is coupled to the M voltage-to-current units for generating a detection signal according to at least the M detection currents.

    Single pole multi-throw switch
    117.
    发明授权
    Single pole multi-throw switch 有权
    单极多掷开关

    公开(公告)号：US09577631B2

    公开(公告)日：2017-02-21

    申请号：US15012859

    申请日：2016-02-02

    Applicant: RichWave Technology Corp.

    Inventor： Chih-Sheng Chen ,  Ching-Wen Hsu

    IPC: H01P5/12 ,  H03K17/687 ,  H01P1/15 ,  H01P1/10

    CPC classification number: H03K17/6871 ,  H01P1/10 ,  H01P1/15 ,  H03K17/693

    Abstract: A single-pole multi-throw switch includes a set of selection switches. The set of selection switches includes a set of primary switches, a first set and a second set of secondary switches. The primary set of switches includes a plurality of primary transistors coupled in series for transmitting radio frequency signals. The first set of secondary switches is coupled to the primary set of switches and includes a plurality of first secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the first secondary transistors are turned on. The second set of secondary switches is coupled to the primary set of switches and includes a plurality of second secondary transistors coupled in series for transmitting the radio frequency signals when the primary transistors and the second secondary transistors are turned on.

    Abstract translation: 单刀多掷开关包括一组选择开关。 选择开关组包括一组主开关，第一组和第二组二次开关。 主要的开关组包括串联耦合的多个主晶体管用于发射射频信号。 第一组次级开关耦合到初级开关组，并且包括串联耦合的多个第一次级晶体管，用于当主晶体管和第一二级晶体管导通时发射射频信号。 第二组次级开关耦合到初级开关组，并且包括串联耦合的多个第二次级晶体管，用于在主晶体管和第二次级晶体管导通时发射射频信号。

    RF switch with adaptive drain and source voltage and associated method
    118.
    发明授权
    RF switch with adaptive drain and source voltage and associated method 有权
    RF开关具有自适应漏源和源极电压及相关方法

    公开(公告)号：US08854111B2

    公开(公告)日：2014-10-07

    申请号：US13597623

    申请日：2012-08-29

    Applicant: Chen Chih-Sheng

    Inventor： Chen Chih-Sheng

    IPC: H03K17/687

    CPC classification number: H03K17/693

    Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

    Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

    Capacitance compensation circuit of a radio frequency switch
    119.
    发明授权
    Capacitance compensation circuit of a radio frequency switch 有权
    射频开关电容补偿电路

    公开(公告)号：US08847668B2

    公开(公告)日：2014-09-30

    申请号：US13784835

    申请日：2013-03-05

    Applicant: RichWave Technology Corp.

    Inventor： Chih-Sheng Chen

    IPC: H03K17/687

    CPC classification number: H03K17/16 ,  H03K17/161

    Abstract: An RF switch includes a transistor and a compensation capacitor circuit. The compensation capacitor circuit includes a first compensation capacitor and a second compensation capacitor of the same capacitance. The compensation capacitor circuit is used to improve voltage distribution between a control node and a first node of the transistor and between the control node and a second node of the transistor.

    Abstract translation: RF开关包括晶体管和补偿电容器电路。 补偿电容电路包括具有相同电容的第一补偿电容器和第二补偿电容器。 补偿电容器电路用于改善控制节点和晶体管的第一节点之间以及控制节点和晶体管的第二节点之间的电压分布。

    RF switch with RF pathway charge-discharge circuit and associated method
    120.
    发明授权
    RF switch with RF pathway charge-discharge circuit and associated method 有权
    RF开关具有射频通路充放电电路及相关方法

    公开(公告)号：US08847666B2

    公开(公告)日：2014-09-30

    申请号：US13597611

    申请日：2012-08-29

    Applicant: Chen Chih-Sheng

    Inventor： Chen Chih-Sheng

    IPC: H03K17/687

    CPC classification number: H03K17/693

    Abstract: A radio frequency (RF) switch includes a common port, a first port, and a second port, a first semiconductor switching element disposed in a first RF pathway between the common port and the first port, a second semiconductor switching element disposed in a second RF pathway between the common port and the second port, a first pair of direct current (DC) blocking capacitors disposed to isolate the first semiconductor switching element in the first RF pathway, and a second pair of DC blocking capacitors disposed to isolate the second semiconductor switching element in the second RF pathway. The respective pairs of DC blocking capacitors allow for different bias voltages to be applied to the respective RF pathways. A charge-discharge circuit may also be employed to decrease transient switching time of the RF switch.

    Abstract translation: 射频（RF）开关包括公共端口，第一端口和第二端口，设置在公共端口和第一端口之间的第一RF路径中的第一半导体开关元件，设置在第二端口中的第二半导体开关元件 公共端口和第二端口之间的RF路径，被设置为隔离第一RF路径中的第一半导体开关元件的第一对直流（DC）阻塞电容器和设置成隔离第二半导体的第二对隔离电容器 开关元件在第二RF通路中。 各对隔直电容器允许将不同的偏置电压施加到相应的RF通路。 也可以采用充放电电路来减少RF开关的瞬时切换时间。

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