Abstract:
An organic electroluminescent device has an anode formed on a substrate, a hole injection layer formed on the anode, wherein the hole injection layer is subjected with an electron shower treatment, an emitting layer formed on the hole injection layer, and a cathode formed on the emitting layer. With the electron shower treatment, impurities from the hole injection layer can be removed, and electrical surface resistance of the hole injection layer cab be increased so that performance and life characteristics of the organic electroluminescent device are improved.
Abstract:
An organic light emitting diode that uses edge light emission and has a long lifespan. An anode and a cathode are spaced by a pattern distance and they are located at the upper and lower portions of the light emitting part respectively. The organic light emitting diode uses a separate light emission area of the light emitting part for each of the initial and the final usage stages so that a tail drop of the luminance is is prevented and the lifespan of the diode is increased.
Abstract:
An anti-warpage backgrinding tape (11) is secured to the circuit side (12) of a semiconductor wafer (14). The backside (16) of the wafer is background. The backside of the wafer is secured to dicing tape (18) so that the anti-warpage backgrinding tape is exposed. The wafer is diced to create individual die structure (34). The die structure comprises semiconductor die (22) with anti-warpage tape elements (36) on circuit sides of the semiconductor die. A die structure is removed from the dicing tape. The backside of the die of the die structure is adhered to a substrate (24). The anti-warpage tape element is removed from the die. The anti-warpage backgrinding tape is preferably partially or fully transparent to permit sensing of guide markings on the wafer during wafer dicing. The adhesive is preferably a curable adhesive. The adhesion between the anti-warpage tape element and the chosen die may be reduced by the application of heat (38).
Abstract:
A polymer organic light-emitting device (OLED) is provided to improve efficiency and lifetime of the polymer OLED by preventing the recombination zone from shrinking. The OLED includes a first electrode, a second electrode, and an emission layer disposed between the first electrode and the second electrode. The emission layer includes an emission material and a hole transport material. The emission layer can be built in a single layer or in multi-layers. In the multi-layer structure, one layer includes an emission material and a hole transport material, while the other layer includes an emission material. The polymer OLED presented in this invention exhibits superior properties regarding electron density, brightness, and color purity.
Abstract:
A composition including a conducting polymer and an ionomer, and an opto-electronic device including the composition are provided. The composition is prepared by doping a conducting polymer with an ionomer which has stabilized association with the conducting polymer backbone, has a low water uptake, has a low content of by-products decomposed by a reaction with electrons, and can physically crosslink with the conducting polymer. Thus, the opto-electronic device including the composition has improved device performance such as device efficiency and lifetime.
Abstract:
A conductive organic/inorganic complex composition, a method of preparing the composition, a thin conductive organic/inorganic complex film prepared using the composition, an organic electroluminescent device comprising the thin conductive organic/inorganic complex film, and a method of manufacturing the organic electroluminescent device. The conductive organic/inorganic complex composition is prepared by mixing a mixed solution comprising a conductive polymeric monomer, an oxidizing agent, and an alcohol solvent with a silica sol solution comprising an organosilicon compound, water, an acid catalyst, and an alcohol solvent. According to the present invention, the conductive organic/inorganic complex composition is hydrophobic and insoluble in water and an organic solvent, has a high mechanical strength, and is thermally and chemically stable. Further, a compositional composition of the conductive organic/inorganic complex composition can be changed over a wide range.
Abstract:
An electroluminescent device comprises a substrate, a first electrode, a second electrode, and an organic layer disposed between the first electrode and the second electrode, and including at least a light-emitting layer. A plurality of metal nano patterns are provided on one surface of at least one of the first electrode and the second electrode. A method of preparing the electroluminescent device comprises providing a substrate, first and second electrodes, and an organic layer including a light-emitting layer, with a plurality of metal nano patterns being provided on at least one of the first and second electrodes. The electroluminescent device can achieve emission of polarized light, regardless of the materials used in forming the organic layer.
Abstract:
Disclosed is a spandex fiber prepared to be excellent in resistance to both chlorine and heat without affecting the properties of the polyurethane polymer, and manufacturing method thereof. The spandex fiber contains hydrotalcite coated with 0.1 to 10 wt. % of a melamine-based compound. The melamine-based compound includes melamine compounds, phosphor-associated melamine compounds, melamine cyanurate compounds, melamine compounds substituted with an organic compound having a carboxyl group, phosphor-associated melamine compounds substituted with an organic compound having a carboxyl group, or melamine cyanurate compounds substituted with an organic compound having a carboxyl group, which are used alone or in combination. The spandex fiber has a high resistance to both chlorine and heat and is therefore useful for underwear, socks, and particularly, sports apparels such as swimsuit.
Abstract:
There is disclosed a method of manufacturing a heterojunction bipolar transistor. The method of manufacturing a heterojunction bipolar transistor can provide a high speed and high frequency characteristic of a transistor, which includes forming sequentially a buffer layer, a subcollector layer, a collector layer, a base layer, an emitter layer and a emitter cap layer on a semiconductor substrate; forming an emitter electrode a selected region of the emitter cap layer; performing etching process for forming a pattern by exposing the selected region of the base layer, and forming a polyimide layer on both side walls of the patternized emitter cap layer and the emitter layer; forming a base electrode at a selected region on the exposed base layer; performing etching process for forming a pattern by exposing some portions of the collector layer, and then forming a p-SiN film on both side walls of the patterned base layer and some portions of the collector layer; exposing some portions of the collector layer, etching the remaining collector layer and some portions of the subcollector layer with a inward slope, and then forming a collector electrode at a selected region of the remaining subcollector layer; and performing a thermal treatment process to make some of the patterned collector layer and the subcollector layer into an insulating region.