公开(公告)号：US20070178664A1

公开(公告)日：2007-08-02

申请号：US11697751

申请日：2007-04-09

Applicant: Uway Tseng ,  Ching-Yu Chang

Inventor： Uway Tseng ,  Ching-Yu Chang

IPC: H01L21/76

CPC classification number: H01L21/76224

Abstract: A shallow trench isolation structure has a trench formed in a substrate, a silicon oxynitride layer conformally formed on the sidewalls and bottom of the trench, and a high density plasma (HDP) oxide layer substantially filling the trench.

Abstract translation: 浅沟槽隔离结构具有在衬底中形成的沟槽，保形地形成在沟槽的侧壁和底部上的氧氮化硅层和基本上填充沟槽的高密度等离子体（HDP）氧化物层。

公开(公告)号：US20070077516A1

公开(公告)日：2007-04-05

申请号：US11271639

申请日：2005-11-10

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03C1/00

CPC classification number: G03F7/2041 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0392

Abstract: A photoresist material having a polymer that turns soluble to a base solution in response to reaction with acid. The material includes a photo-acid generator (PAG) that decomposes to form acid in response to radiation energy and a quencher capable of neutralizing acid and having a reduced mobility. The photoresist material can thereby prevent water mark defects from immersion lithography.

Abstract translation: 一种光致抗蚀剂材料，其具有响应于与酸的反应而使其溶解于碱溶液的聚合物。 该材料包括响应于辐射能分解形成酸的光酸产生剂（PAG）和能够中和酸并具有降低迁移率的猝灭剂。 因此，光致抗蚀剂材料可以防止浸没式光刻中的水痕缺陷。

公开(公告)号：US20070048675A1

公开(公告)日：2007-03-01

申请号：US11209684

申请日：2005-08-24

Applicant: Ching-Yu Chang ,  Chin-Hsiang Lin

Inventor： Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/405

Abstract: A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

Abstract translation: 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

公开(公告)号：US07094662B2

公开(公告)日：2006-08-22

申请号：US10710637

申请日：2004-07-27

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/76

CPC classification number: H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

Abstract: A method of forming an overlay mark is provided. A first material layer is formed on a substrate, and then a first trench serving as a trench type outer mark is formed in the first material layer. The first trench is partially filled with the first deposition layer. A second material is formed over the first trench and the first deposition layer. A second trench is formed exposing the first deposition layer within the first trench. The second trench is partially filled with a second deposition layer forming a third trench. A third material layer is formed on the substrate to cover the second deposition layer and the second material layer. A step height is formed on the third deposition layer between the edge of the first trench and the center of the first trench. A raised feature serving as an inner mark is formed on the third deposition layer.

Abstract translation: 提供了一种形成覆盖标记的方法。 在基板上形成第一材料层，然后在第一材料层中形成用作沟槽型外标的第一沟槽。 第一沟槽部分地填充有第一沉积层。 在第一沟槽和第一沉积层上形成第二材料。 形成第二沟槽，使第一沉积层暴露在第一沟槽内。 第二沟槽部分地填充有形成第三沟槽的第二沉积层。 在基板上形成第三材料层以覆盖第二沉积层和第二材料层。 在第一沉积层的边缘和第一沟槽的中心之间的第三沉积层上形成台阶高度。 在第三沉积层上形成用作内标的凸起特征。

公开(公告)号：US20060166143A1

公开(公告)日：2006-07-27

申请号：US11043598

申请日：2005-01-25

Applicant: Burn-Jeng Lin ,  Ching-Yu Chang

Inventor： Burn-Jeng Lin ,  Ching-Yu Chang

IPC: G03F7/00

CPC classification number: G03F7/40 ,  G03F7/2024

Abstract: A method, tool, and machine for hardening a photoresist image while the photoresist image is immersed in a liquid.

Abstract translation: 一种用于在光致抗蚀剂图像浸入液体中时使光致抗蚀剂图像硬化的方法，工具和机器。

公开(公告)号：US07064035B2

公开(公告)日：2006-06-20

申请号：US10888104

申请日：2004-07-09

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L21/8236

CPC classification number: H01L27/112 ,  H01L27/1124

Abstract: A Mask ROM and a method for fabricating the same are described. The Mask ROM comprises a substrate, a plurality of gates on the substrate, a gate oxide layer between the gates and the substrate, a plurality of buried bit lines in the substrate between the gates, an insulator on the buried bit lines and between the gates, a plurality of word lines each disposed over a row of gates perpendicular to the buried bit lines, and a coding layer between the word lines and the gates.

Abstract translation: 描述了掩模ROM及其制造方法。 掩模ROM包括衬底，衬底上的多个栅极，栅极和衬底之间的栅极氧化物层，在栅极之间的衬底中的多个掩埋位线，掩埋位线上的绝缘体和栅极之间 ，多个字线，各自设置在与掩埋位线垂直的一行栅极上，以及在字线和栅极之间的编码层。

公开(公告)号：US20060110689A1

公开(公告)日：2006-05-25

申请号：US10995653

申请日：2004-11-23

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/00

CPC classification number: G03F7/2041 ,  G03F7/168 ,  H01L21/67051 ,  H01L21/67057

Abstract: A method comprises forming a photoresist on a substrate, rinsing the photoresist using a rinse liquid agitated with at least one megasonic source, exposing the photoresist to radiation while immersed in a liquid, and developing the photoresist.

Abstract translation: 一种方法包括在基底上形成光致抗蚀剂，使用用至少一个兆声源驱动的漂洗液冲洗光致抗蚀剂，在浸入液体中时将光致抗蚀剂暴露于辐射，并显影光致抗蚀剂。

公开(公告)号：US20050250054A1

公开(公告)日：2005-11-10

申请号：US10937177

申请日：2004-09-09

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/30 ,  G03F7/32 ,  G03F7/40

CPC classification number: G03F7/40 ,  G03F7/2041

Abstract: A method of forming a photolithographic mask for use in fabricating a semiconductor device is provided. The method includes forming a layer of photoresist material on a wafer and exposing the photoresist material to a light source. The photoresist material is developed, and before the wafer dries, the wafer is cleaned with one or more cleaning liquids. The cleaning liquid may be a surfactant, an acid, a dissolved gas solution (e.g., CO2, SO2, SO3, NH3, NO2, or the like), deionized water, or the like. Thereafter, the wafer is dried. The wafer may be dried, for example, by a spin dry process, a gas purge process using, for example, compressed dry air, N2, CO2, Ar, or the like, or a drying alcohol such as IPA vapor.

Abstract translation: 提供一种形成用于制造半导体器件的光刻掩模的方法。 该方法包括在晶片上形成光致抗蚀剂材料层并将光致抗蚀剂材料暴露于光源。 显影光致抗蚀剂材料，并且在晶片干燥之前，用一种或多种清洁液体清洁晶片。 清洗液体可以是表面活性剂，酸，溶解气体溶液（例如CO 2，SO 2，SO 3，NH 3， SUB> 3，NO 2 2等），去离子水等。 此后，将晶片干燥。 可以例如通过旋转干燥方法干燥晶片，使用例如压缩干燥空气，N 2，CO 2，Ar， 或诸如IPA蒸气的干燥醇。

公开(公告)号：US06806535B2

公开(公告)日：2004-10-19

申请号：US10248467

申请日：2003-01-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: H01L2976

CPC classification number: H01L27/1126 ,  H01L27/112

Abstract: A method of fabricating a non-volatile memory is provided. A longitudinal strip of stacked layer is formed over a substrate. The longitudinal strip is a stacked layer including a gate dielectric layer, a conductive layer and a cap layer. A buried bit line is formed in the substrate on each side of the longitudinal strip. The longitudinal strip is patterned to form a plurality of stacked blocks. Thereafter, a dielectric layer is formed over the substrate. The dielectric layer exposes the cap layer of the stacked blocks. Some cap layers of the stacked blocks are removed to expose the conductive layer underneath. A word line is formed over the dielectric layer to connect stacked blocks in the same row serially together.

Abstract translation: 提供了一种制造非易失性存储器的方法。 堆叠层的纵向条形成在衬底上。 纵向条是包括栅介电层，导电层和盖层的堆叠层。 在纵向条的每一侧上的基板中形成掩埋位线。 图案化纵向条以形成多个堆叠的块。 此后，在衬底上形成电介质层。 电介质层暴露堆叠块的盖层。 去除堆叠块的一些盖层以露出下面的导电层。 在电介质层上形成一个字线，以将串联在同一行中的堆叠块连接起来。

公开(公告)号：US06632587B2

公开(公告)日：2003-10-14

申请号：US09861623

申请日：2001-05-22

Applicant: Ching-Yu Chang

Inventor： Ching-Yu Chang

IPC: G03F726

CPC classification number: G03F7/40 ,  Y10S430/143

Abstract: A method of enhancing photoresist anti-etching ability, at least includes follows. Provide a substrate, form a photoresist with a pattern on the substrate, put both photoresist and substrate in a low pressure environment, and treat photoresist by an electron beam to let at least part of photoresist is hardened. This method usually is performed before etch process, but the method also could be modified as follows. Expose photoresist by an electron beam while an etching process being performed, or alternately expose photoresist by an electron beam and perform an etch process.

Abstract translation: 至少包括如下的增强抗蚀剂抗蚀刻能力的方法。 提供基板，在基板上形成具有图案的光致抗蚀剂，将光致抗蚀剂和基板放置在低压环境中，并通过电子束处理光致抗蚀剂以使至少部分光致抗蚀剂硬化。 该方法通常在蚀刻处理之前进行，但是也可以如下进行修改。 当进行蚀刻处理时，通过电子束曝光光致抗蚀剂，或者通过电子束交替地曝光光致抗蚀剂并进行蚀刻处理。