公开(公告)号：US20090201729A1

公开(公告)日：2009-08-13

申请号：US12219104

申请日：2008-07-16

Applicant: Seung-Hwan Song ,  Jun Jin Kong ,  Jae Hong Kim ,  Young Hwan Lee ,  Dong Hyuk Chae ,  Tae Hun Kim ,  Kyoung Lae Cho

Inventor： Seung-Hwan Song ,  Jun Jin Kong ,  Jae Hong Kim ,  Young Hwan Lee ,  Dong Hyuk Chae ,  Tae Hun Kim ,  Kyoung Lae Cho

IPC: G11C16/04

CPC classification number: G11C16/3418 ,  G11C7/04 ,  G11C11/5621 ,  G11C16/3427 ,  G11C16/349 ,  G11C29/00

Abstract: A memory device and a memory device heat treatment method are provided. The memory device may include: a non-volatile memory device; one or more heating devices configured to contact with the non-volatile memory device and heat the non-volatile memory device; and a controller configured to control an operation of the one or more heating devices based on operational information of the non-volatile memory device. Through this, it may be possible to improve an available period of the non-volatile memory device.

Abstract translation: 提供了一种存储器件和存储器件热处理方法。 存储器件可以包括：非易失性存储器件; 配置成与所述非易失性存储器件接触并加热所述非易失性存储器件的一个或多个加热器件; 以及控制器，被配置为基于所述非易失性存储器件的操作信息来控制所述一个或多个加热装置的操作。 由此，可以改善非易失性存储器件的可用周期。

公开(公告)号：US20090190397A1

公开(公告)日：2009-07-30

申请号：US12232138

申请日：2008-09-11

Applicant: Kyoung Lae Cho ,  Donghun Yu ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim ,  Heeseok Eun

Inventor： Kyoung Lae Cho ,  Donghun Yu ,  Yoon Dong Park ,  Jun Jin Kong ,  Jae Hong Kim ,  Heeseok Eun

IPC: G11C16/06 ,  G11C16/00 ,  G11C7/00

CPC classification number: G11C11/5642 ,  G11C16/3418 ,  G11C29/00

Abstract: A memory device and a memory data reading method are provided. The memory device may include: a multi-bit cell array; a programming unit that stores N data pages in a memory page in the multi-bit cell array; and a control unit that divides the N data pages into a first group and second group, reads data of the first group from the memory page, and determines a scheme of reading data of the second group from the memory page based on the read data of the first group.

Abstract translation: 提供存储器件和存储器数据读取方法。 存储器件可以包括：多位单元阵列; 编程单元，其将N个数据页存储在多位单元阵列中的存储器页面中; 以及控制单元，其将N个数据页划分为第一组和第二组，从存储器页面读取第一组的数据，并且基于读取的数据确定从存储器页面读取第二组的数据的方案 第一组。

公开(公告)号：US20090185417A1

公开(公告)日：2009-07-23

申请号：US12213944

申请日：2008-06-26

Applicant: Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

Inventor： Kyoung Lae Cho ,  Yoon Dong Park ,  Jun Jin Kong ,  Jong Han Kim ,  Jae Hong Kim ,  Young Hwan Lee ,  Heeseok Eun ,  Seung-Hwan Song

IPC: G11C16/04

CPC classification number: G11C11/5628 ,  G11C29/00 ,  G11C2216/14

Abstract: A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

Abstract translation: 提供了存储器编程设备和/或方法。 存储器编程装置可以包括数据存储单元，第一计数单元，索引存储单元和/或编程单元。 数据存储单元可以被配置为存储数据页。 第一计数单元可以被配置为通过基于数据页计数包括在至少一个参考阈值电压状态中的单元的数量来生成索引信息。 索引存储单元可以被配置为存储所生成的索引信息。 编程单元可以被配置为将数据页存储在数据存储单元中，并将生成的索引信息存储在索引存储单元中。 第一计数单元可以将生成的索引信息发送到编程单元。 存储器编程装置可以监视存储器单元中阈值电压的分布状态。

公开(公告)号：US20090163015A1

公开(公告)日：2009-06-25

申请号：US12147178

申请日：2008-06-26

Applicant: Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

Inventor： Eun Shil Park ,  Kwon Hong ,  Jae Hong Kim ,  Jae Hyoung Koo

IPC: H01L21/28

CPC classification number: H01L21/28273 ,  H01L27/11521

Abstract: The present invention relates to a method of fabricating a flash memory device. According to a method of fabricating a flash memory device in accordance with an aspect of the present invention, a semiconductor substrate over which a tunnel insulating layer and a first conductive layer are formed is provided. A first oxide layer is formed on the first conductive layer using a plasma oxidization process in a state where a back bias voltage is applied. A nitride layer is formed on the first oxide layer. A second oxide layer is formed on the nitride layer. A second conductive layer is formed on the second oxide layer.

Abstract translation: 本发明涉及一种制造闪速存储器件的方法。 根据本发明的一个方面的制造闪速存储器件的方法，提供了形成隧道绝缘层和第一导电层的半导体衬底。 在施加反向偏置电压的状态下，使用等离子体氧化工艺在第一导电层上形成第一氧化物层。 在第一氧化物层上形成氮化物层。 在氮化物层上形成第二氧化物层。 在第二氧化物层上形成第二导电层。

公开(公告)号：US20090068850A1

公开(公告)日：2009-03-12

申请号：US12147802

申请日：2008-06-27

Applicant: Jae Hyoung Koo ,  Kwon Hong ,  Jae Hong Kim ,  Eun Shil Park

Inventor： Jae Hyoung Koo ,  Kwon Hong ,  Jae Hong Kim ,  Eun Shil Park

IPC: H01L21/283

CPC classification number: H01L21/0214 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/31662 ,  H01L29/66833

Abstract: The present invention relates generally to a method of fabricating a flash memory device. The method includes forming a tunnel dielectric layer on a semiconductor substrate using a plasma oxidization process. The tunnel dielectric layer is formed using the plasma oxidation process employing Ar and O2 gases, therefore, defect charges can be prevented from being created due to dangling bonds such as Si—H. Accordingly, the shift of the threshold voltage (Vth) of a device can be reduced and cycling and charge retention characteristics can be improved.

Abstract translation: 本发明一般涉及制造闪速存储器件的方法。 该方法包括使用等离子体氧化工艺在半导体衬底上形成隧道介电层。 使用Ar和O 2气体的等离子体氧化工艺形成隧道介电层，因此可以防止由于诸如Si-H的悬挂键而产生缺陷电荷。 因此，可以降低器件的阈值电压（Vth）的偏移，并且可以提高循环和电荷保持特性。

公开(公告)号：US20080155977A1

公开(公告)日：2008-07-03

申请号：US11977650

申请日：2007-10-25

Applicant: Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

Inventor： Dong Soo Kim ,  Jae Hoon Lee ,  Chun Seung Lee ,  Jae Hong Kim ,  Joong Seon Joh ,  Eun Tae Jeung

IPC: F16D31/02

CPC classification number: E02F9/2207 ,  E02F9/2285 ,  E02F9/2292 ,  F15B21/008 ,  F15B21/087 ,  F15B2211/20538 ,  F15B2211/20592 ,  F15B2211/3144 ,  F15B2211/329 ,  F15B2211/36 ,  F15B2211/6054 ,  F15B2211/6313 ,  F15B2211/6316 ,  F15B2211/6346 ,  F15B2211/7053 ,  F15B2211/8616

Abstract: An apparatus for easing an impact on a boom of an excavator and a method of controlling the same are disclosed, which can minimize the vibration occurring in the boom due to the impact on a boom cylinder by actively controlling an amount of hydraulic fluid being supplied to the boom cylinder when the operation of the boom cylinder is suddenly stopped due to an operator's sudden manipulation of an operation lever for a working device. The apparatus includes first and second hydraulic pumps; a boom cylinder; a main control valve; an operation lever for supplying pilot signal pressure to a spool of the main control valve when an operator manipulates the operation lever; operation lever detection means for detecting boom up and boom down signal pressures according to an amount of manipulation of the operation lever; boom cylinder pressure detection means for detecting pressures generated in a large chamber and a small chamber of the boom cylinder; a controller for calculating and outputting a control signal of the main control valve if the boom cylinder has been suddenly stopped; and boom vibration preventing means for controlling the pilot signal pressure being supplied from the second hydraulic pump to the main control valve.

Abstract translation: 公开了一种用于减轻对挖掘机的起重臂的冲击的装置及其控制方法，其可以通过主动地控制供给至动臂的液压流体的量来最小化由于对动臂缸的冲击而引起的动臂中产生的振动 当操作者突然操作用于工作装置的操作杆时，动臂缸的操作突然停止时的动臂缸。 该装置包括第一和第二液压泵; 动臂缸; 主控阀; 操作杆，用于当操作者操作操作杆时，将主控信号压力提供给主控制阀的阀芯; 操作杆检测装置，用于根据操作杆的操纵量检测吊杆上升和吊杆下降信号压力; 用于检测在动臂缸的大室和小室中产生的压力的动臂缸压力检测装置; 控制器，用于如果动臂缸突然停止则计算和输出主控制阀的控制信号; 以及用于控制从第二液压泵供给至主控制阀的先导信号压力的起重臂振动防止装置。