公开(公告)号：US20120220182A1

公开(公告)日：2012-08-30

申请号：US13470482

申请日：2012-05-14

Applicant: YANG WEI ,  LIANG LIU ,  SHOU-SHAN FAN

Inventor： YANG WEI ,  LIANG LIU ,  SHOU-SHAN FAN

IPC: H01J9/02 ,  B82Y99/00

CPC classification number: H01J1/316 ,  H01J1/3044 ,  H01J9/025 ,  H01J9/027 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/30469 ,  H01J2201/3165 ,  H01J2329/0455 ,  H01J2329/0489

Abstract: A method for making the electron emission apparatus is provided. In the method, an insulating substrate including a surface is provided. A number of grids are formed on the insulating substrate and defined by a plurality of electrodes. A number of conductive linear structures are fabricated and supported by the electrodes. The number of conductive linear structures are substantially parallel to the surface and each of the grids contains at least one of the conductive linear structures. The conductive linear structures are cut to form a number of electron emitters. Each of the electron emitters has two electron emission ends defining a gap therebetween.

Abstract translation: 提供了制造电子发射装置的方法。 在该方法中，提供包括表面的绝缘基板。 绝缘基板上形成有多个栅极，由多个电极限定。 许多导电线性结构由电极制造和支撑。 导电线性结构的数量基本上平行于表面，并且每个栅格包含至少一个导电线性结构。 导电线性结构被切割以形成多个电子发射体。 每个电子发射器具有限定它们之间的间隙的两个电子发射端。

公开(公告)号：US08080931B2

公开(公告)日：2011-12-20

申请号：US12183614

申请日：2008-07-31

Applicant: Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

Inventor： Masahiro Terada ,  Makoto Kojima ,  Takashi Iwaki ,  Takeru Mizue ,  Tsuyoshi Ibe

IPC: H01J1/00

CPC classification number: H01J1/316 ,  B82Y30/00 ,  C01G23/047 ,  C01G51/04 ,  C01G53/04 ,  C01P2004/64 ,  C01P2006/40 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1295 ,  C23C30/00 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  Y10T428/26

Abstract: A conductive film of thickness of from 3 nm to 50 nm made from a metal or ally formed on a substrate, wherein the ratio of density thereof to bulk density of the metal or alloy is from 0.2 to 0.5, and the ratio of resistivity thereof to bulk resistivity of the metal or alloy is from 100 to 100000.

Abstract translation: 由在基板上形成的金属或铝合金制成的厚度为3nm〜50nm的导电膜，其中，所述金属或合金的密度与体积密度之比为0.2〜0.5，电阻率与 金属或合金的体电阻率为100〜100000。

公开(公告)号：US08013511B2

公开(公告)日：2011-09-06

申请号：US12463715

申请日：2009-05-11

Applicant: Eiji Takeuchi ,  Takeo Tsukamoto

Inventor： Eiji Takeuchi ,  Takeo Tsukamoto

IPC: H01J1/30 ,  H01L29/02

CPC classification number: H01J1/316 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: An electron-emitting device has a pair of device electrodes formed on a substrate and an electroconductive film connected to the device electrodes. The electroconductive film has a first gap between the device electrodes and has a carbon film having a second gap at least in the first gap. The substrate is formed by stacking a nitrogen-contained activation suppressing layer and an activation accelerating layer having a nitrogen containing ratio smaller than that of the activation suppressing layer onto a base and has nitrogen containing ratio distribution in the activation suppressing layer in a film thickness direction. The nitrogen containing ratio of the activation suppressing layer at the activation accelerating layer side is smaller than that at the base side.

Abstract translation: 电子发射器件具有形成在衬底上的一对器件电极和连接到器件电极的导电膜。 导电膜在器件电极之间具有第一间隙，并且具有至少在第一间隙中具有第二间隙的碳膜。 基板是通过将含氮活化抑制层和活性促进层与活化抑制层的比例小于活化抑制层的活化促进层而形成的，并且在活化抑制层中具有膜厚度方向上的含氮比分布 。 活化促进层侧的活化抑制层的氮含量比基体侧的氮含有率小。

公开(公告)号：US07986080B2

公开(公告)日：2011-07-26

申请号：US11964014

申请日：2007-12-25

Applicant: Chih-Hao Tsai ,  Kuan-Jung Chen ,  Fu-Ming Pan ,  Mei Liu ,  Chi-Neng Mo

Inventor： Chih-Hao Tsai ,  Kuan-Jung Chen ,  Fu-Ming Pan ,  Mei Liu ,  Chi-Neng Mo

IPC: H01J1/62

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J2201/3165

Abstract: An electron-emitting device and a fabricating method thereof are provided. First, a substrate, having a first side and a second side which is opposite to the first side, is provided. Afterwards, a first electrode pattern layer is formed on the first side of the substrate. Next, a conductive pattern layer is formed on the substrate and the first electrode pattern layer. After that, an electron-emitting region is formed in the conductive pattern layer. Then, a second electrode pattern layer is formed on the second side of the substrate and partially covers the conductive pattern layer. The fabricating method has a simple fabricating process and a low fabricating cost.

Abstract translation: 提供了一种电子发射器件及其制造方法。 首先，提供具有与第一侧相对的第一侧和第二侧的基板。 之后，在基板的第一侧上形成第一电极图形层。 接下来，在基板和第一电极图案层上形成导电图案层。 之后，在导电图案层中形成电子发射区。 然后，在基板的第二面上形成第二电极图案层，并且部分地覆盖导电图案层。 该制造方法具有简单的制造工艺和低制造成本。

公开(公告)号：US07816848B2

公开(公告)日：2010-10-19

申请号：US11986850

申请日：2007-11-26

Applicant: Peng Liu ,  Shou-Shan Fan ,  Liang Liu ,  Kai-Li Jiang

Inventor： Peng Liu ,  Shou-Shan Fan ,  Liang Liu ,  Kai-Li Jiang

IPC: H01J1/05

CPC classification number: H01J1/316 ,  B82Y10/00 ,  H01J2201/30469 ,  H01J2201/3165

Abstract: A surface-conduction electron emitter includes a substrate, two electrodes disposed on the substrate and parallel to each other, and a plurality of line-shaped carbon nanotube elements fixed on at least one electrode. One end of each carbon nanotube element points to the other electrode. An electron source using the surface-conduction electron emitter includes a substrate, a plurality of electrodes disposed on the substrate and parallel to each other, and a plurality of line-shaped carbon nanotube elements fixed on at least one electrode. One end of each carbon nanotube element points to the other electrode.

Abstract translation: 表面传导电子发射体包括基板，设置在基板上的彼此平行的两个电极以及固定在至少一个电极上的多个线状碳纳米管元件。 每个碳纳米管元件的一端指向另一个电极。 使用表面传导电子发射体的电子源包括基板，设置在基板上的多个电极并且彼此平行，以及固定在至少一个电极上的多个线状碳纳米管元件。 每个碳纳米管元件的一端指向另一个电极。

公开(公告)号：US07795795B2

公开(公告)日：2010-09-14

申请号：US12054051

申请日：2008-03-24

Applicant: Jun Iba ,  Hisanobu Azuma

Inventor： Jun Iba ,  Hisanobu Azuma

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J1/316 ,  H01J29/04 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489

Abstract: The invention provides an electron beam apparatus having: a rear plate having a plurality of electron-emitting devices each provided with a device electrode, and a plurality of wirings connected to the device electrodes; and a face plate being provided with an anode electrode, and being arranged in opposition to the rear plate so as to be irradiated with an electron emitted from the electron-emitting device, wherein the device electrode is electrically connected to the wiring through an additional electrode, and the additional electrode is formed from an electroconductive material of which phase transition from a solid phase directly into a vapor phase is caused at a temperature not lower than a melting point of the device electrode within an evacuated atmosphere.

Abstract translation: 本发明提供了一种电子束装置，其具有：具有多个电子发射器件的后板，每个电子发射器件均设有器件电极，以及多个连接到器件电极的布线; 并且面板设置有阳极电极，并且被布置成与所述后板相对地照射从所述电子发射器件发射的电子，其中所述器件电极通过附加电极电连接到所述布线 并且附加电极由导电材料形成，其中在从抽出的气氛中不低于器件电极的熔点的温度引起从固相直接进入气相的相变。

公开(公告)号：US07755267B2

公开(公告)日：2010-07-13

申请号：US11138472

申请日：2005-05-27

Applicant: Kunio Takada

Inventor： Kunio Takada

IPC: H01J63/00

CPC classification number: H01J9/027 ,  H01J1/316 ,  H01J31/127 ,  H01J2201/3165

Abstract: An object of the present invention is to prevent a device portion from being electrostatically charged with the use of the high resistivity film, and at the same time prevent a leak current passing the device portion due to an existing high resistivity film, in an electron source with the use of a surface-conduction electron-emitting device. This process for manufacturing the electron-emitting device comprises the steps of: forming an electroconductive thin film 4 astride device electrodes; forming the high resistivity film 7 in a region except the electroconductive thin film 4 and a perimeter thereof; subjecting the electroconductive thin film 4 to forming processing, to form a fissure 5 therein; and depositing a carbon film 6 inside the fissure 5 and in a region reaching the high resistivity film 7 from the edge of the fissure 5, by applying voltage between device electrodes 2 and 3 under an atmosphere containing a carbon compound.

Abstract translation: 本发明的目的是通过使用高电阻率膜来防止器件部分被静电充电，并且同时防止在电子源中由于现有的高电阻率膜而导致的器件部分漏电流 使用表面传导电子发射器件。 用于制造电子发射器件的该方法包括以下步骤：形成横跨器件电极的导电薄膜; 在导电薄膜4以外的区域及其周边形成高电阻率膜7; 对导电薄膜4进行成形处理，在其中形成裂缝5; 并且在裂缝5内部和从裂缝5的边缘到达高电阻率膜7的区域中，通过在含有碳化合物的气氛下在器件电极2和3之间施加电压而沉积碳膜6。

公开(公告)号：US07749558B2

公开(公告)日：2010-07-06

申请号：US11549910

申请日：2006-10-16

Applicant: Yasuko Tomida ,  Taku Shimoda

Inventor： Yasuko Tomida ,  Taku Shimoda

IPC: B05D5/12

CPC classification number: H01J1/316 ,  H01J9/027 ,  H01J2201/3165

Abstract: A method for manufacturing electron emitting devices each having electrodes formed on a substrate and an electroconductive thin film connected between a pair of electrodes and having an electron emitting region is provided which can manufacture electron emitting devices having an excellent uniformity of electron emitting characteristics by improving the formation of liquid droplets to be dispensed to the substrate. In the manufacturing method, the substrate formed with the electrodes is subjected to a hydrophobic process using a silane coupling agent which contains two or more acetoxy groups in a molecule, and thereafter liquid droplets containing material for forming the electroconductive thin film are dispensed to the substrate. An image of excellent uniformity can be displayed by adopting electron emitting devices manufactured in the above manner to an image display apparatus.

Abstract translation: 本发明提供了一种制造电子发射器件的方法，每个电子发射器件均具有形成在衬底上的电极和连接在一对电极之间并具有电子发射区域的导电薄膜，其可以通过改善电子发射特性来制造具有优异的电子发射特性均匀性的电子发射器件 形成要分配到基底的液滴。 在制造方法中，使用在分子中含有两个以上的乙酰氧基的硅烷偶联剂对形成有电极的基板进行疏水化处理，然后将含有形成导电性薄膜的液滴分配到基板 。 通过采用上述方式制造的电子发射器件可以显示出优异的均匀性的图像给图像显示装置。

公开(公告)号：US07733003B2

公开(公告)日：2010-06-08

申请号：US11253584

申请日：2005-10-20

Applicant: Tamayo Hiroki ,  Hisanobu Azuma ,  Hirotomo Taniguchi

Inventor： Tamayo Hiroki ,  Hisanobu Azuma ,  Hirotomo Taniguchi

IPC: H01J63/08

CPC classification number: H01J1/316 ,  H01J29/04 ,  H01J29/94 ,  H01J31/127 ,  H01J2201/3165 ,  H01J2329/0489 ,  H01J2329/4613 ,  H01J2329/463 ,  H01J2329/946 ,  H01J2329/948

Abstract: An image forming apparatus in which a first substrate provided with an electron-emitting device and an image displaying member which electrons emitted from the electron-emitting device irradiate are arranged to be opposed is provided with a deflecting means deflecting the electrons emitted from the electron-emitting device and a trapping unit trapping an inert gas ionized by the electrons. Thereby, the damages of the electron-emitting device by the inert gas are prevented, and the life of an image display apparatus is aimed to be elongated.

Abstract translation: 一种图像形成装置，其中设置有电子发射器件的第一衬底和从电子发射器件发射的电子照射的图像显示部件布置成相对设置有偏转装置，该偏转装置使从电子发射器件发射的电子偏转， 捕获单元捕获由电子离子化的惰性气体。 因此，防止了由惰性气体引起的电子发射器件的损坏，并且使图像显示装置的寿命更长。

公开(公告)号：US07592743B2

公开(公告)日：2009-09-22

申请号：US11302239

申请日：2005-12-14

Applicant: Takeshi Yamatoda ,  Mitsutoshi Kuno

Inventor： Takeshi Yamatoda ,  Mitsutoshi Kuno

IPC: H01J1/62 ,  H01J63/04

CPC classification number: H01J31/127 ,  H01J1/316 ,  H01J2201/3165

Abstract: A miss landing measure on a face plate of electrons emitted from electron-emitting devices by the warping of a rear plate and the face plate accompanying heat processes, such as seal bonding, is provided. Initial velocity vectors of electrons emitted from an electron-emitting area of an electron-emitting device formed on the rear plate has a distributed tendency according to an in-plane distribution of normal line directions of the rear plate so that the electrons emitted from each of the plurality of electron-emitting devices may irradiate each of the plurality of light emitting portions, corresponding to each of the electron-emitting devices, formed on the face plate.

Abstract translation: 提供了通过后板的翘曲和伴随热处理的面板（例如密封接合）从电子发射器件发射的电子的面板上的错落地测量。 从形成在后板上的电子发射器件的电子发射区发射的电子的初始速度矢量具有根据后板的法线方向的面内分布的分布趋势，使得从每个 多个电子发射器件可以照射形成在面板上的每个电子发射器件的多个发光部分中的每一个。