公开(公告)号：US06951795B2

公开(公告)日：2005-10-04

申请号：US10744048

申请日：2003-12-24

Applicant: Min-Yong Lee ,  Hoon-Jung Oh ,  Jong-Min Lee

Inventor： Min-Yong Lee ,  Hoon-Jung Oh ,  Jong-Min Lee

IPC: H01L27/04 ,  H01L21/02 ,  H01L21/20 ,  H01L21/8242 ,  H01L27/108

CPC classification number: H01L28/84 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/91

Abstract: The present invention relates to a method for fabricating a capacitor of a semiconductor device. The method includes the steps of: forming a storage node oxide layer having a hole for forming a storage node on a substrate; forming a silicon layer on the storage node oxide layer having the hole; forming a photoresist on the silicon layer such that the photoresist fills the hole; forming a storage node having a cylinder shape inside of the hole by removing the silicon layer disposed on an upper surface of the storage node oxide layer; ion-implanting an impurity onto head portions of the storage node under a state that the photoresist remains; removing the photoresist; and growing metastable-polysilicon (MPS) grains on inner walls of the storage node.

Abstract translation: 本发明涉及半导体器件的电容器的制造方法。 该方法包括以下步骤：在衬底上形成具有用于形成存储节点的孔的存储节点氧化物层; 在具有该孔的存储节点氧化物层上形成硅层; 在所述硅层上形成光致抗蚀剂，使得所述光致抗蚀剂填充所述孔; 通过去除设置在存储节点氧化物层的上表面上的硅层，形成在孔内部具有圆柱形状的存储节点; 在保留光致抗蚀剂的状态下将杂质离子注入存储节点的头部; 去除光致抗蚀剂; 并在存储节点的内壁上生长亚稳态多晶硅（MPS）晶粒。

公开(公告)号：US20050202727A1

公开(公告)日：2005-09-15

申请号：US10799403

申请日：2004-03-12

Applicant: Bartley Andre ,  Jonathan Ive ,  Jong Min Lee ,  Kan Lim

Inventor： Bartley Andre ,  Jonathan Ive ,  Jong Min Lee ,  Kan Lim

IPC: H01R4/66

CPC classification number: H01R12/7088 ,  H01R13/26 ,  H01R13/642 ,  H01R2201/06

Abstract: A DC connector arrangement is disclosed. The DC connector arrangement includes a DC plug and a DC receptacle that are configured to engage one another at more than one position. The DC plug and DC receptacle are also configured with a small contact distance to minimize the insertion and extraction forces that occur between the DC plug and the DC receptacle.

Abstract translation: 公开了一种DC连接器装置。 DC连接器装置包括配置成在多于一个位置处彼此接合的DC插头和DC插座。 DC插头和DC插座也配置有小的接触距离，以最大限度地减少直流插头和直流插座之间发生的插拔力。

公开(公告)号：US20050133820A1

公开(公告)日：2005-06-23

申请号：US10857655

申请日：2004-05-28

Applicant: Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

Inventor： Byoung-Gue Min ,  Kyung-Ho Lee ,  Seong-Il Kim ,  Jong-Min Lee ,  Chul-Won Ju

IPC: H01L21/331 ,  H01L29/737 ,  H01L29/739 ,  H01L21/8222 ,  H01L31/0328

CPC classification number: H01L29/66318 ,  H01L29/7371

Abstract: Disclosed are a heterojunction bipolar transistor and a method of fabricating the same. A first dielectric layer easily etched is deposited on the overall surface of a substrate before an isolation region is defined. The first dielectric layer and a sub-collector layer are selectively etched, and then a second dielectric layer etched at a low etch rate is deposited on the overall surface of the substrate. Via holes are formed in the first and second dielectric layers, and then the first dielectric layer is removed using a difference between etch characteristics of the first and second dielectric layers. Accordingly, a reduction in power gain, generated at the interface of a compound semiconductor and a dielectric insulating layer (the second dielectric layer), can be eliminated.

Abstract translation: 公开了异质结双极晶体管及其制造方法。 在限定隔离区之前，易于蚀刻的第一电介质层沉积在基板的整个表面上。 选择性地蚀刻第一介电层和次集电极层，然后以低蚀刻速率蚀刻的第二电介质层沉积在基板的整个表面上。 在第一和第二电介质层中形成通孔，然后使用第一和第二电介质层的蚀刻特性之间的差异去除第一介电层。 因此，可以消除在化合物半导体和介电绝缘层（第二介电层）的界面处产生的功率增益的降低。

公开(公告)号：US20050018525A1

公开(公告)日：2005-01-27

申请号：US10625277

申请日：2003-07-23

Applicant: Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

Inventor： Dong-Sauk Kim ,  Ho-Seok Lee ,  Byung-Jun Park ,  Il-Young Kwon ,  Jong-Min Lee ,  Hyeong-Soo Kim ,  Jin-Woong Kim ,  Hyung-Bok Choi ,  Dong-Woo Shin

IPC: H01L21/8242 ,  G11C8/02 ,  H01L21/82 ,  H01L27/02 ,  H01L27/10 ,  H01L27/108

CPC classification number: H01L27/10855 ,  H01L27/0207 ,  H01L27/10814

Abstract: Semiconductor devices and methods of manufacture thereof are disclosed that are capable of preventing a short of lower electrodes caused by a leaning or lifting phenomenon while forming the lower electrodes and securing enough capacitance of a capacitor by widening an effective capacitor area. The inventive semiconductor device includes: a plurality of capacitor plugs disposed in an orderly separation distance; and a plurality of lower electrodes used for a capacitor and disposed in an orderly separation distance to be respectively connected with the capacitor plugs.

Abstract translation: 公开了半导体装置及其制造方法，其能够通过扩大有效的电容器面积来形成下部电极并且通过扩大电容器的足够的电容来防止由倾斜或提升现象引起的较短的下部电极。 本发明的半导体器件包括：以有序的间隔距离设置的多个电容器插头; 以及多个用于电容器的下电极，并且以与电容器插头分别连接的有序分隔距离设置。

公开(公告)号：US06396242B2

公开(公告)日：2002-05-28

申请号：US09880074

申请日：2001-06-14

Applicant: Gang-Hyeon Choi ,  Kil-Tae Park ,  Jong-Min Lee ,  Soo-Yeol Park

Inventor： Gang-Hyeon Choi ,  Kil-Tae Park ,  Jong-Min Lee ,  Soo-Yeol Park

IPC: H02J700

CPC classification number: H02J7/0013 ,  H02J7/0042

Abstract: A battery charging and discharging system is provided. The system has a tray including a battery insertion unit having a plurality of battery insertion portions, into which battery pouches can be inserted, and holes, through which the electrodes of the battery pouches can pass, on its bottom; and a frame surrounding the edge of the battery insertion unit. The system may also have an electrode contact clip including plate springs facing each other so that they can hold an electrode protruding through a hole on the bottom of the battery insertion unit, and a base for supporting the plate springs.

Abstract translation: 提供电池充放电系统。 该系统具有包括电池插入单元的托盘，该电池插入单元具有可插入电池袋的多个电池插入部分，以及电池袋的电极可通过该孔的底部的孔; 以及围绕电池插入单元的边缘的框架。 该系统还可以具有电极接触夹，其包括彼此面对的板簧，使得它们可以保持通过电池插入单元的底部上的孔突出的电极和用于支撑板簧的基座。

公开(公告)号：US6009972A

公开(公告)日：2000-01-04

申请号：US165185

申请日：1998-10-02

Applicant: Jae-Soon Choi ,  Min Kim ,  Jung-Hun Kwak ,  Sang-Hun Jeon ,  Jong-Min Lee ,  Hoon-Soo Ham

Inventor： Jae-Soon Choi ,  Min Kim ,  Jung-Hun Kwak ,  Sang-Hun Jeon ,  Jong-Min Lee ,  Hoon-Soo Ham

IPC: H05K5/00 ,  H04R1/34

CPC classification number: H04R1/345

Abstract: An omni-directional speaker system having a speaker unit fixed in a speaker cabinet, a first reflecting plate having a hole installed in the speaker cabinet for dispersing sound waves emitted from the speaker unit, and a second reflecting plate disposed over the hole of the first reflecting plate.

Abstract translation: 一种具有固定在扬声器箱中的扬声器单元的全向扬声器系统，具有安装在扬声器柜中的用于分散从扬声器单元发射的声波的孔的第一反射板和设置在扬声器单元的孔的第二反射板上的第二反射板 反光板。