中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

245 records (took 0.024 seconds)

    Non-volatile memory device and method of operating the same
    175.
    发明申请
    Non-volatile memory device and method of operating the same 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20090122613A1

    公开(公告)日：2009-05-14

    申请号：US12149213

    申请日：2008-04-29

    Applicant: Won-joo Kim ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Tae-eung Yoon ,  Tae-hee Lee

    Inventor： Won-joo Kim ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Tae-eung Yoon ,  Tae-hee Lee

    IPC: G11C16/06 ,  G11C11/34

    CPC classification number: G11C16/10 ,  G11C2213/71

    Abstract: A non-volatile memory device may include a plurality of stacked semiconductor layers, a plurality of NAND strings, a common bit line, a common source line, and/or a plurality of string selection lines. The plurality of NAND strings may be on the plurality of semiconductor layers. Each of the plurality of NAND strings may include a plurality of memory cells and/or at least one string selection transistor arranged in a NAND-cell array. The common bit line may be commonly connected to each of the NAND strings at a first end of the memory cells. The common source line may be commonly connected to each of the NAND strings at a second end of the memory cells. The plurality of string selection lines may be coupled to the at least one string selection transistor included in each of the NAND strings such that a signal applied to the common bit line is selectively applied to the NAND strings.

    Abstract translation: 非易失性存储器件可以包括多个堆叠半导体层，多个NAND串，公共位线，公共源极线和/或多个串选择线。 多个NAND串可以在多个半导体层上。 多个NAND串中的每一个可以包括布置在NAND单元阵列中的多个存储单元和/或至少一个串选择晶体管。 公共位线可以在存储器单元的第一端处共同连接到每个NAND串。 公共源极线可以在存储器单元的第二端处共同连接到每个NAND串。 多个串选择线可以耦合到包括在每个NAND串中的至少一个串选择晶体管，使得施加到公共位线的信号被选择性地施加到NAND串。

    ICE TRAY
    176.
    发明申请
    ICE TRAY 有权
    冰盘

    公开(公告)号：US20090020681A1

    公开(公告)日：2009-01-22

    申请号：US12142132

    申请日：2008-06-19

    Applicant: Tae Hee LEE ,  Hong Hee Park ,  Joon Hwan Oh ,  Young Jin Kim ,  Kwang Ha Suh

    Inventor： Tae Hee LEE ,  Hong Hee Park ,  Joon Hwan Oh ,  Young Jin Kim ,  Kwang Ha Suh

    IPC: F25C1/24

    CPC classification number: F25C1/22

    Abstract: An ice tray is provided that prevents the overflow or splashing of water or thin ice out of the ice tray as water is supplied to the ice tray, or when the ice tray is shaken by an external force. The ice tray may include a plurality of receiving portions that receive water for freezing into ice pieces. An overflow preventing portion may extend upward from upper edges of the receiving portions to form a barrier to water flowing out of the ice tray. Alternatively, the receiving parts may be positioned within a corresponding plurality of location parts having water proofing walls extending upward therefrom to inhibit the unintentional flow of water or thin ice out of the receiving portions of the ice tray.

    Abstract translation: 提供了一个冰盘，当水被供应到冰盘时，或当冰盘被外力摇动时，防止水或薄冰溢出或溅出冰盘的冰盘。 冰盘可以包括多个容纳部分，其接收水以冻结成冰块。 溢流防止部分可以从接收部分的上边缘向上延伸以形成从冰盘流出的水的屏障。 或者，接收部件可以定位在具有从其向上延伸的防水壁的对应的多个位置部件中，以防止冰或薄冰从冰托的接收部分的无意的流动。

    CONTROLLING METHOD OF ICE MAKER
    177.
    发明申请
    CONTROLLING METHOD OF ICE MAKER 失效
    制冰机控制方法

    公开(公告)号：US20090019866A1

    公开(公告)日：2009-01-22

    申请号：US12173259

    申请日：2008-07-15

    Applicant: Tae Hee Lee ,  Hong Hee Park ,  Joon Hwan Oh ,  Young Jin Kim ,  Kwang Ha Suh

    Inventor： Tae Hee Lee ,  Hong Hee Park ,  Joon Hwan Oh ,  Young Jin Kim ,  Kwang Ha Suh

    IPC: F25C5/08 ,  G05B15/00

    CPC classification number: F25C5/08 ,  F25C2305/022 ,  F25C2600/04

    Abstract: A method of controlling an ice maker is provided that minimizes generation of excess water and reduces energy consumption. The method allows for uniform heat to be generated and distributed throughout the ice tray during an ice separation process. Consequently, the ice separating process may be consistently performed irrespective of the shape of the ice tray and its surroundings, thereby minimizing generation of excess water, and reducing energy consumption.

    Abstract translation: 提供一种控制制冰机的方法，其使多余的水的产生最小化并降低能量消耗。 该方法允许在冰分离过程期间产生均匀的热量并分布在整个冰盘上。 因此，无论冰托及其周围的形状如何，冰分离过程可以一致执行，从而最小化多余的水的产生，并降低能量消耗。

    FIRMWARE UPGRADE SYSTEM AND CONTROL METHOD THEREOF
    178.
    发明申请
    FIRMWARE UPGRADE SYSTEM AND CONTROL METHOD THEREOF 审中-公开
    固件升级系统及其控制方法

    公开(公告)号：US20080295087A1

    公开(公告)日：2008-11-27

    申请号：US12114177

    申请日：2008-05-02

    Applicant: Jung Suk KANG ,  Dong Ho Shin ,  Dong Soo Jun ,  Tae Hee Lee

    Inventor： Jung Suk KANG ,  Dong Ho Shin ,  Dong Soo Jun ,  Tae Hee Lee

    IPC: G06F9/44

    CPC classification number: G06F8/65

    Abstract: A firmware upgrade system searches for and upgrades to a new version of firmware without a user's attendance. The firmware upgrade system includes a user terminal to generate a search command signal while unattended by the user to initiate a search for a new version of electric appliance firmware, and a server to determine whether the new version of electric appliance firmware is present in response to the search command signal. The new version of electric appliance firmware, if present on the server, is transmitted to the user terminal and replaces the firmware in firmware storage if the new version of firmware is more recent than the firmware in firmware storage.

    Abstract translation: 固件升级系统在没有用户出席的情况下搜索和升级新版本的固件。 固件升级系统包括用户终端，用于生成搜索命令信号，同时由用户无人值守以开始搜索新版本的电器固件，以及服务器，用于确定电器固件的新版本是否响应于 搜索命令信号。 新版本的电器固件（如果存在于服务器上）传送到用户终端，如果固件的新版本比固件存储器中的固件更新，则将固件固件更换为固件存储。

    Non-volatile memory devices and methods of operating and fabricating the same
    180.
    发明申请
    Non-volatile memory devices and methods of operating and fabricating the same 审中-公开
    非易失性存储器件及其操作和制造方法

    公开(公告)号：US20080191264A1

    公开(公告)日：2008-08-14

    申请号：US12010139

    申请日：2008-01-22

    Applicant: Won-Joo Kim ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Tae-hee Lee

    Inventor： Won-Joo Kim ,  Yoon-dong Park ,  June-mo Koo ,  Suk-pil Kim ,  Tae-hee Lee

    IPC: H01L29/00 ,  H01L21/3205

    CPC classification number: H01L27/115 ,  H01L27/11521

    Abstract: Non-volatile memory devices highly integrated using an oxide based compound semiconductor and methods of operating and fabricating the same are provided. A non-volatile memory device may include one or more oxide based compound semiconductor layers. A plurality of auxiliary gate electrodes may be arranged to be insulated from the one or more oxide based compound semiconductor layers. A plurality of control gate electrodes may be positioned between adjacent pairs of the plurality of auxiliary gate electrodes at a different level from the plurality of auxiliary gate electrodes. The plurality of control gate electrodes may be insulated from the one or more oxide based compound semiconductor layers. A plurality of charge storing layers may be interposed between the one or more oxide based compound semiconductor layers and the plurality of control gate electrodes.

    Abstract translation: 提供了使用基于氧化物的化合物半导体高度集成的非易失性存储器件及其操作和制造方法。 非易失性存储器件可以包括一个或多个基于氧化物的化合物半导体层。 多个辅助栅极电极可以布置成与一个或多个氧化物基化合物半导体层绝缘。 多个控制栅电极可以位于与多个辅助栅极电极不同的多个辅助栅电极的相邻对之间。 多个控制栅电极可以与一个或多个氧化物基化合物半导体层绝缘。 可以在一个或多个氧化物基化合物半导体层和多个控制栅电极之间插入多个电荷存储层。

Patent Agency Ranking