摘要:
An etching resist has a first heat-generating layer, a second heat-generating layer, and a metal compound layer including a metallic oxynitride layer containing a metallic oxynitride. The first heat-generating layer, the metallic oxynitride layer, and the second heat-generating layer are directly or indirectly laminated such that the metallic oxynitride layer is positioned between the first heat-generating layer and the second heat-generating layer.
摘要:
A head 2 is hollow. The head 2 includes a face part 4, a crown part 6 and a sole part 8. Ribs 20 and 22 are provided on the inner surface of the head. The ribs 20 and 22 have a height being greater than a thickness. The ribs 20 and 22 are separated from the face part, and are separated from the crown part. An extending direction of the rib 20 is inclined with respect to a front-back direction of the head. The rib 20 has a height change part 30 formed in a face side end part of the rib 20, the height change part 30 having a height gradually lowered as approaching a rib end part. The rib 20 extends toward a heel side in the direction of a backside of the head.
摘要:
A shaft sealing device and a rotary machine equipped therewith are provided with a sealing body configured by stacking a plurality of thin sealing pieces; and a low-pressure-side side sealing plate in which a plate surface facing the low-pressure side is pressed against an inner wall surface of the housing facing the direction of the axis by means of the pressure of a fluid applied from a high-pressure side to the low-pressure side. A protrusion for blocking a downward flow toward the inside of the low-pressure-side side sealing plate in the radial direction along the low-pressure side of the sealing body is formed on the inside of the low-pressure-side side sealing plate in the radial direction, and a communication path for guiding the downward flow blocked by means of the protrusion to a low-pressure-side region is formed on the housing.
摘要:
The invention aims to provide latent curing agents which exert high low-temperature curing properties when used together with ionically polymerizable compounds and which exhibit high storage stability at room temperature. Latent curing agents for ionically polymerizable compounds which agents each contain a hydroxyl-free amine imide compound having an N—N bond energy of 100 to 210 kJ/mol as determined by B3LYP functional theory method.
摘要:
A shaft seal that is constituted by annularly arranging a plurality of seal segments in the circumferential direction of a rotating shaft, in which each seal segment has a plurality of thin plates that are provided in a predetermined arrangement in the circumferential direction of the rotating shaft, side plates that sandwich the plurality of thin plates from both sides thereof in the axial direction, and retention rings that retain the base ends of the plurality of thin plates and the base ends of the side plates; the distal ends of the thin plates protrude farther toward the rotating shaft than the distal ends of the side plates, and the protrusion length of the distal ends of the thin plates in the vicinity of the end portions in the circumferential direction where adjacent seal segments are connected is set to be less than the protrusion length of the distal ends of the thin plates that are located at the middle of the seal segment in the circumferential direction.
摘要:
A blade driving device includes: a board including an optical path opening; first and second blades moving toward and away from the optical path opening; first and second transmitting portions driving the first and second blades; and first and second drive sources respectively driving the first and second transmitting portions, wherein the first and second transmitting portions respectively include first and second drive pins, and the first blade includes an engagement slot engaging one of the first and second drive pins and is attached to the first and the second transmitting portions to be rotatable about the other of the first and second drive pins.
摘要:
An iron-type golf club head is assembled from a front component (4) made of a metal material having a specific gravity ρ1, a rear component (5) made of a fiber reinforced resin having a specific gravity ρ2 lower than the specific gravity ρ1, a toe-side component (6) made of a metal material having a specific gravity ρ3 higher than the specific gravity ρ1, and a heel-side component (7) made of a metal material having a specific gravity ρ4 higher than the specific gravity ρ1.
摘要:
An impact beam that absorbs an impact of a vehicle collision is provided in a vehicle door, at a position between an inner panel and an outer panel. The impact beam has a wavy portion that undulates in the height direction of the vehicle door. The center axis of the wavy portion extends along the longitudinal direction of a vehicle.
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
The invention provides a semiconductor memory device including a variable resistance element capable of decreasing a variation of a resistance value of stored data due to a large number of times of switching operations and capable of performing a stable writing operation. The device has a circuit that applies a reforming voltage pulse to a memory cell including a variable resistance element of a degraded switching characteristic and a small read margin due to a large number of times of application of a write voltage pulse, to return each resistance state of the variable resistance element to an initial resistance state. By applying the reforming voltage pulse, the variable resistance element can recover at least one resistance state from a variation from the initial resistance state, and can recover the switching characteristic. Accordingly, there is obtained a semiconductor memory device in which a reduction of a read margin is suppressed.