公开(公告)号：US5552751A

公开(公告)日：1996-09-03

申请号：US469176

申请日：1995-06-06

Applicant: Russell E. Cooper

Inventor： Russell E. Cooper

IPC: H03B5/32 ,  H03B5/06 ,  H03K3/012 ,  H03K3/354 ,  H03B5/36

CPC classification number: H03K3/3545 ,  H03K3/012

Abstract: An oscillator circuit (30, 40) for starting-up and operating at low voltages has been provided. The oscillator circuit includes an inverter circuit(31, 41) coupled across first and second terminals of a resonant circuit (14). The inverter circuit includes a push-pull driver stage having a P-channel transistor (18) and an N-channel transistor (20). The common drain electrodes of each are coupled to the second terminal of the resonant circuit. The source electrodes of the P- and N-channel transistors are respectively coupled to first and second supply voltage terminals. The gate electrode of the first transistor is coupled to the first terminal of resonant circuit. The inverter circuit further includes a circuit (32, 42) for shifting the voltage level applied to the gate electrode of the second transistor, relative to the voltage applied to the gate electrode of the first transistor, by a predetermined voltage. This has the effect of reducing the required operating voltage range of the inverter circuit while still maintaining both transistors active.

Abstract translation: 已经提供了用于在低电压下启动和操作的振荡器电路（30,40）。 振荡器电路包括耦合在谐振电路（14）的第一和第二端子上的反相器电路（31,41）。 逆变器电路包括具有P沟道晶体管（18）和N沟道晶体管（20）的推挽驱动级。 每个的公共漏电极耦合到谐振电路的第二端。 P沟道晶体管和N沟道晶体管的源电极分别耦合到第一和第二电源电压端子。 第一晶体管的栅电极耦合到谐振电路的第一端。 逆变器电路还包括用于将施加到第二晶体管的栅电极的电压相对于施加到第一晶体管的栅电极的电压移动预定电压的电路（32,42）。 这具有减少逆变器电路的所需工作电压范围同时仍保持两个晶体管有效的效果。

公开(公告)号：US5457649A

公开(公告)日：1995-10-10

申请号：US296508

申请日：1994-08-26

Applicant: Eric C. Eichman ,  Thomas C. Salt

Inventor： Eric C. Eichman ,  Thomas C. Salt

IPC: G11C16/02 ,  G11C17/16 ,  H01L21/768 ,  H01L23/525 ,  G11C13/00

CPC classification number: G11C13/0004 ,  G11C17/16 ,  H01L21/76888 ,  H01L23/5256 ,  G11C2213/33 ,  H01L2924/0002

Abstract: A semiconductor device used as a semiconductor memory device is disclosed which is made of an amorphous silicon material that provides either a "1" or "0" memory state when the amorphous silicon material is in a non-conduction or insulating state and a "0" or "1" memory state when the amorphous silicon material is transformed, by use of a breakdown voltage applied to electrodes coupled thereto, into a conducting state. The amorphous silicon material is located adjacent to a doped semiconductor region of a semiconductor substrate separated only by a relatively thin primarily metal ohmic contact. The resulting semiconductor structure for the semiconductor device or semiconductor memory device is primarily a single level metalization type structure. A write-once, read-only semiconductor memory array is also disclosed which uses, as each memory cell of the array, one of the disclosed semiconductor memory devices. Methods for producing the semiconductor memory device and write-once, read-only semiconductor memory array are also disclosed.

Abstract translation: 公开了一种用作半导体存储器件的半导体器件，其由当非晶硅材料处于非导通或绝缘状态时提供“1”或“0”存储状态的非晶硅材料制成，“0” 当非晶硅材料通过使用施加到其上的电极的击穿电压而变换为导通状态时，“或”1“存储器状态。 非晶硅材料位于半导体衬底的掺杂半导体区域附近，半导体衬底仅由相对较薄的主要金属欧姆接触分开。 所得到的用于半导体器件或半导体存储器件的半导体结构主要是单级金属化型结构。 还公开了一次写入的只读半导体存储器阵列，其将阵列的每个存储单元用作所公开的半导体存储器件之一。 还公开了用于制造半导体存储器件和一次写入的只读半导体存储器阵列的方法。

公开(公告)号：US5454114A

公开(公告)日：1995-09-26

申请号：US238121

申请日：1994-04-04

Applicant: Randy L. Yach ,  Sumit Mitra

Inventor： Randy L. Yach ,  Sumit Mitra

IPC: G06F1/04 ,  G06F1/24 ,  G06F11/267 ,  G06F15/78 ,  H03K17/22

CPC classification number: G06F1/24 ,  G06F11/221

Abstract: A microcontroller is adapted, when operating, to execute programs and instructions and, in response, to generate control signals to selectively control external apparatus. The microcontroller includes a power supply for supplying power to the overall device within a predetermined range suitable for its operation, and a clock for supplying a clock frequency to the microcontroller with a stability suitable for precise timing and counting within the device. The microcontroller is selectively reset to prevent it from executing programs and instructions for purposes of generating the control signals, and is maintained in the reset condition despite initiation of a removal from the reset condition, until the power supplied by the power supply is in a predetermined range and the clock frequency supplied by the clock is stable. In this way, no execution by the microcontroller is permitted until device stability is achieved, to prevent errors in execution. In the disclosed embodiment, the reset condition is maintained by a power-up timer and an oscillator start-up timer, each timer having a programmable timeout interval to end the reset condition only when the timeout intervals of both timers have expired.

Abstract translation: 微控制器在操作时被调整为执行程序和指令，并且作为响应，适于产生控制信号以选择性地控制外部设备。 微控制器包括用于在适合于其操作的预定范围内向总体设备供电的电源，以及用于以适于在设备内精确定时和计数的稳定性向微控制器提供时钟频率的时钟。 微控制器被选择性地复位以防止其执行用于产生控制信号的程序和指令，并且尽管开始从复位状态移除直到电源提供的电源处于预定的状态 时钟提供的时钟频率稳定。 以这种方式，在实现器件稳定性之前，不允许微控制器的执行，以防止执行中的错误。 在所公开的实施例中，复位条件由加电定时器和振荡器启动定时器维持，每个定时器具有可编程的超时间隔，以仅在两个定时器的超时间隔已经期满时才结束复位条件。

公开(公告)号：US2352085A

公开(公告)日：1944-06-20

申请号：US40880741

申请日：1941-08-29

Applicant: RCA CORP

Inventor： DIMMICK GLENN L

IPC: G02B1/11

CPC classification number: G02B1/113

公开(公告)号：US2040796A

公开(公告)日：1936-05-12

申请号：US64491432

申请日：1932-11-29

Applicant: GEN ANILINE WORKS INC

Inventor： MARIA RITTINGHAUSEN CARL ,  RICHARD HAYNN

IPC: D06P3/20

CPC classification number: D06P3/20 ,  Y10S8/907