公开(公告)号：US12218269B2

公开(公告)日：2025-02-04

申请号：US17172082

申请日：2021-02-10

Applicant: ASM IP Holding B.V.

Inventor： Kazuhiro Nishiwaki

IPC: H01L31/18 ,  G01J1/42 ,  G01N21/27 ,  H01J37/32

Abstract: Examples of a substrate processing apparatus includes a chamber configured to contain a stage, a light receiving device configured to receive light inside the chamber, and a substrate transfer apparatus that includes a shaft and a rotation arm configured to rotate with rotation of the shaft and is configured to supply a plurality of light beams having different amounts of light to the light receiving device.

公开(公告)号：US12218000B2

公开(公告)日：2025-02-04

申请号：US17481979

申请日：2021-09-22

Applicant: ASM IP Holding B.V.

Inventor： HeeSung Kang

IPC: H01L21/764 ,  H01L21/768

Abstract: A substrate processing method of easily forming an air gap includes: forming a first insulating layer having a first step coverage on a patterned structure including a first protrusion and a second protrusion; and forming, on the first insulating layer, a second insulating layer having a second step coverage lower than the first step coverage, wherein an air gap is formed between the first protrusion and the second protrusion by repeating the forming of the second insulating layer.

公开(公告)号：US20250037995A1

公开(公告)日：2025-01-30

申请号：US18914767

申请日：2024-10-14

Applicant: ASM IP Holding B.V.

Inventor： Suvi P. Haukka ,  Elina Färm ,  Raija H. Matero ,  Eva E. Tois ,  Hidemi Suemori ,  Antti Juhani Niskanen ,  Sung-Hoon Jung ,  Petri Räisänen

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.

公开(公告)号：US20250037993A1

公开(公告)日：2025-01-30

申请号：US18777790

申请日：2024-07-19

Applicant: ASM IP Holding B.V.

Inventor： Tomomi Ban ,  Annisa Noorhidayati ,  Ling Chi Hwang

IPC: H01L21/02

Abstract: A method of forming dielectric material layer on a surface of a substrate is provided. The method may comprise: providing a substrate within a reaction chamber; flowing a precursor on the substrate within the reaction chamber; flowing a reactant on to the substrate; and generating a plasma by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component. By generating the plasma, the precursor reacts with the reactant to form a layer and a pressure in the reaction chamber during at least the step of providing the plasma is between 2,000 and 4,000 Pa.

公开(公告)号：US20250029853A1

公开(公告)日：2025-01-23

申请号：US18775963

申请日：2024-07-17

Applicant: ASM IP Holding B.V.

Inventor： Christopher Cillie

IPC: H01L21/67 ,  G01J5/48 ,  H01L21/66

Abstract: A semiconductor processing system includes a chamber body, a substrate support, a pyrometer, and a controller. The substrate support is arranged within an interior of the chamber body and is supported for rotation about a rotation axis. The pyrometer is supported above the chamber body, is radially offset from the rotation axis, and is optically coupled to the interior of the chamber body. The controller is operably connected to the substrate support and is disposed in communication with the pyrometer. The controller is further responsive to instructions recorded on a non-transitory machine-readable memory to seat a substrate on the substrate support, acquire a temperature measurement acquired using electromagnetic radiation emitted by the substrate, and determine decentering of the substrate relative to the rotation axis using the electromagnetic radiation received at the pyrometer. Material layer deposition methods and computer program products are also described.

公开(公告)号：US20250029834A1

公开(公告)日：2025-01-23

申请号：US18908990

申请日：2024-10-08

Applicant: ASM IP Holding B.V.

Inventor： Bhushan Zope ,  Shankar Swaminathan ,  Kiran Shrestha ,  Chiyu Zhu ,  Henri Jussila ,  Qi Xie

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for depositing a molybdenum metal film directly on a dielectric material surface of a substrate by a cyclical deposition process are disclosed. The methods may include: providing a substrate comprising a dielectric surface into a reaction chamber; and depositing a molybdenum metal film directly on the dielectric surface, wherein depositing comprises: contacting the substrate with a first vapor phase reactant comprising a molybdenum halide precursor; and contacting the substrate with a second vapor phase reactant comprising a reducing agent precursor. Semiconductor device structures including a molybdenum metal film disposed directly on a surface of a dielectric material deposited by the methods of the disclosure are also disclosed.

公开(公告)号：US20250029831A1

公开(公告)日：2025-01-23

申请号：US18772365

申请日：2024-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.

公开(公告)号：US12203166B2

公开(公告)日：2025-01-21

申请号：US17307007

申请日：2021-05-04

Applicant: ASM IP Holding B.V.

Inventor： Amit Mishra ,  Bhushan Zope ,  Shankar Swaminathan ,  Theodorus G. M. Oosterlaken

IPC: C23C16/44 ,  C23C16/06 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32

Abstract: An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

公开(公告)号：US20250014908A1

公开(公告)日：2025-01-09

申请号：US18348602

申请日：2023-07-07

Applicant: ASM IP Holding, B.V.

Inventor： Timothee Blanquart ,  René Henricus Jozef Vervuurt ,  Shaoren Deng

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/027 ,  H01L21/768

Abstract: Disclosed are methods and related systems for topography-selective depositions. Embodiments of presently described methods comprise employing a sacrificial gap filling fluid for selectively forming a material on a distal surface of a gap, and not on at least one of sidewalls of the gap and proximal surfaces. Further described are methods for filling a gap with a high quality material by means of a sacrificial gap filling fluid.

公开(公告)号：US20240429038A1

公开(公告)日：2024-12-26

申请号：US18827621

申请日：2024-09-06

Applicant: ASM IP Holding B.V.

Inventor： Chuang Wei ,  Aditya Chaudhury ,  Prahlad Kulkarni ,  Xing Lin ,  Xiaoda Sun ,  Woo Jung Shin ,  Bubesh Babu Jotheeswaran ,  Fei Wang ,  Qu Jin ,  Aditya Walimbe ,  Rajeev Reddy Kosireddy ,  Yen Chun Fu ,  Amin Azimi

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/311 ,  H01L21/67

Abstract: In some embodiments, a method for semiconductor processing preclean includes removing an oxide layer from a substrate using anhydrous hydrogen fluoride in combination with water vapor. A system for the preclean may be configured to separate the anhydrous hydrogen fluoride and the water vapor until they are delivered to a common volume near the substrate. Corrosion within components of the system may be limited by purification of anhydrous hydrogen fluoride, passivation of components, changing component materials, and heating components. Passivation may be achieved by filling a gas delivery component with anhydrous hydrogen fluoride and allowing the anhydrous hydrogen fluoride to remain in the gas delivery component to form a passivation layer. Consistent water vapor delivery may be achieved in part by heating components using heaters.