公开(公告)号：US20240222110A1

公开(公告)日：2024-07-04

申请号：US18395907

申请日：2023-12-26

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami J. Pore

IPC: H01L21/02 ,  H01J37/302 ,  H01J37/32

CPC classification number: H01L21/02274 ,  H01J37/3023 ,  H01J37/32357

Abstract: The present disclosure relates to methods and systems for forming a film using atomic layer deposition (ALD). More particularly, the disclosed methods and systems utilize a remote low-power plasma to partially breakdown a chemical precursor to form a radicalized precursor which more efficiently chemisorbs onto the surface of a substrate. A second reactant is introduced to convert the chemisorb layer into the desired film.

公开(公告)号：US20250029831A1

公开(公告)日：2025-01-23

申请号：US18772365

申请日：2024-07-15

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell

IPC: H01L21/02 ,  C23C16/26 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32

Abstract: The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.

公开(公告)号：US20240117494A1

公开(公告)日：2024-04-11

申请号：US18367480

申请日：2023-09-13

Applicant: ASM IP Holding B.V.

Inventor： Tommi Tynell ,  Viljami Pore

IPC: C23C16/513 ,  C23C16/455 ,  C23C16/515

CPC classification number: C23C16/513 ,  C23C16/45519 ,  C23C16/515

Abstract: The disclosure relates to methods of filling gaps in semiconductor substrates. A method of filling a gap is disclosed. The method including providing a substrate having a gap in a reaction chamber, providing a first precursor including silicon and carbon into the reaction chamber in a vapor phase, wherein the first precursor includes at least one unsaturated carbon-carbon bond and at least one atom selected from oxygen and nitrogen. The method further includes providing a first plasma into the reaction chamber to polymerize the first precursor for forming a gap filling material, thereby at least partially filling the gap with the gap filling material. In some embodiments, the at least one unsaturated bond is a double bond.