Driver circuit for semiconductor switching device
    11.
    发明授权
    Driver circuit for semiconductor switching device 失效
    半导体开关器件的驱动电路

    公开(公告)号:US06720819B1

    公开(公告)日:2004-04-13

    申请号:US10426879

    申请日:2003-05-01

    申请人: Akihisa Yamamoto

    发明人: Akihisa Yamamoto

    IPC分类号: H03K17687

    摘要: A gate sink circuit includes a comparator for monitoring a gate voltage of a switching device in comparison with a predetermined threshold value; a sink switching device connected between the gate of the switching device and a ground line; an inverter for inverting an output of the comparator; another inverter for inverting an input signal for the switching device; an AND circuit for operating the logic product of each output from the inverters; and an RS flip-flop FF provided with the output of the AND circuit as a set signal and the input signal as a reset signal, thereby securely keeping an off-state of the switching device and greatly reducing flow-through current in turn-on.

    摘要翻译: 栅极接收电路包括:比较器,用于与预定阈值相比监视开关器件的栅极电压; 连接在开关装置的栅极和接地线之间的汇开关装置; 用于反相比较器的输出的反相器; 另一个逆变器,用于反转用于开关装置的输入信号; AND电路,用于操作来自逆变器的每个输出的逻辑积; 和设置有AND电路的输出的RS触发器FF作为设定信号,输入信号作为复位信号,从而可靠地保持开关器件的截止状态,并大大降低导通电流 。

    Seat for motor vehicles
    12.
    发明授权
    Seat for motor vehicles 失效
    汽车座椅

    公开(公告)号:US4787594A

    公开(公告)日:1988-11-29

    申请号:US20698

    申请日:1987-03-02

    IPC分类号: B60N2/16 B60N2/18

    摘要: A seat for motor vehicle includes a seat cushion whose rear or front section or both are coupled via a link mechanism with a base frame in a manner that can be lifted and lowered, whereby through joining of the link mechanism to a control shaft for height adjustment that can be rotated without any limitation, coupling of one of the rocking ends of a bell crank which repeats a rocking motion, interlocked with the rotation of the control shaft, to the seat cushion, and joining of the other rocking end to the control shaft via a crank, it is possible to adjust the height of the rear section, front section, or both, of the cushion seat between the lowest position and the highest position, for every rocking operation of the bell crank.

    摘要翻译: 一种用于机动车辆的座椅包括座垫,其后部或前部或两者通过连接机构与底架以可升降的方式联接,从而通过将连杆机构连接到用于高度调节的控制轴 可以旋转而没有任何限制,将响应于摇动运动的一个摇臂的一个摇臂的端头与控制轴的旋转联动,并将另一摇摆的接头连接到控制轴 通过曲柄,可以调节位于最低位置和最高位置之间的缓冲座的后部,前部或两者的高度,用于钟形曲柄的每个摆动操作。

    GATE DRIVE CIRCUIT
    13.
    发明申请
    GATE DRIVE CIRCUIT 有权
    门控驱动电路

    公开(公告)号:US20130214822A1

    公开(公告)日:2013-08-22

    申请号:US13667896

    申请日:2012-11-02

    IPC分类号: H03K17/687

    摘要: A gate drive circuit of the present invention is a gate drive circuit for driving an insulated gate switching element, which comprises a control drive circuit for applying a driving voltage to a control terminal of the switching element at a predetermined timing, and a voltage monitoring circuit for monitoring both a first voltage which is a power supply voltage of the control drive circuit and a second voltage which negatively biases the control terminal of the switching element, and in the gate drive circuit, the control drive circuit cuts off an output when at least one of the first and second voltages monitored by the voltage monitoring circuit becomes lower than a threshold value. It is an object of the present invention to provide an insulated gate switching element which can suppress wrong ON.

    摘要翻译: 本发明的栅极驱动电路是用于驱动绝缘栅极开关元件的栅极驱动电路,其包括用于在预定时刻向开关元件的控制端施加驱动电压的控制驱动电路和电压监视电路 用于监视作为控制驱动电路的电源电压的第一电压和负极地偏置开关元件的控制端的第二电压,并且在栅极驱动电路中,控制驱动电路至少在至少 由电压监视电路监视的第一和第二电压之一变得低于阈值。 本发明的目的是提供一种可以抑制错误ON的绝缘栅极开关元件。

    Temperature detector
    14.
    发明授权
    Temperature detector 有权
    温度检测器

    公开(公告)号:US07535128B2

    公开(公告)日:2009-05-19

    申请号:US11624379

    申请日:2007-01-18

    IPC分类号: H01H31/10

    摘要: A temperature detector for outputting a temperature signal comprises: a temperature sensing diode formed on the same chip as a semiconductor switching device and having a specific temperature vs. voltage characteristic, wherein the temperature detector outputs the anode potential of the temperature sensing diode as the temperature signal; a constant current circuit for supplying a current to the anode of the temperature sensing diode; and anode potential holding means for holding the anode potential of the temperature sensing diode as the temperature signal at the start of switching operation of the semiconductor switching device.

    摘要翻译: 用于输出温度信号的温度检测器包括:形成在与半导体开关器件相同的芯片上并具有特定温度对电压特性的温度感测二极管,其中温度检测器输出温度感测二极管的阳极电位作为温度 信号; 用于向温度感测二极管的阳极提供电流的恒流电路; 以及阳极电位保持装置,用于在半导体开关器件的开关操作开始时保持温度感测二极管的阳极电位作为温度信号。

    Semiconductor protection circuit
    15.
    发明授权
    Semiconductor protection circuit 有权
    半导体保护电路

    公开(公告)号:US06891707B2

    公开(公告)日:2005-05-10

    申请号:US09984491

    申请日:2001-10-30

    摘要: In a semiconductor protection circuit comprising a low speed protection circuit having an overcurrent detector for detecting an overcurrent of a predetermined switching element and turning off the semiconductor switching element following detection of the overcurrent, and a high speed protection circuit turning off the semiconductor switching element based on a voltage signal proportional to an output voltage of the semiconductor switching element.

    摘要翻译: 在包括低速保护电路的半导体保护电路中,具有用于检测预定开关元件的过电流的过电流检测器,并且在检测到过电流之后关闭半导体开关元件,并且高速保护电路基于半导体开关元件基于 在与半导体开关元件的输出电压成比例的电压信号上。

    Semiconductor device
    16.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US06639295B2

    公开(公告)日:2003-10-28

    申请号:US09954172

    申请日:2001-09-18

    IPC分类号: H01L2900

    摘要: In a semiconductor substrate, semiconductor regions belonging to the IGBT are formed in an IGBT region and semiconductor regions belonging to the diode are formed in a diode region. The IGBT and the diode are connected in anti-parallel to each other. A trench in which an insulator is buried is formed between the IGBT region and the diode region. The insulator restricts the reverse recovery current which flows from the diode region into the IGBT region. Thus, semiconductor regions of an IGBT and a diode connected in anti-parallel with each other are fabricated in a single semiconductor substrate and the chip size is reduced.

    摘要翻译: 在半导体基板中,属于IGBT的半导体区域形成在IGBT区域中,属于二极管的半导体区域形成在二极管区域中。 IGBT和二极管彼此反并联连接。 在IGBT区域和二极管区域之间形成有埋入绝缘体的沟槽。 绝缘体限制从二极管区域流入IGBT区域的反向恢复电流。 因此,在单个半导体衬底中制造IGBT和二极管彼此反并联的半导体区域,并且芯片尺寸减小。