摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
A mobile terminal includes a front body, a rear body, and a slide module connecting the front body to the rear body such that the front body is slidable with respect to the rear body, the slide module including a first slide member fixed to a front surface of the rear body and having a rail unit at both sides of the rear body, the rail unit having a specific length corresponding to a slide stroke of the front body; and a second slide member fixed to a rear surface of the front body and having a moving guide constrained to the rail unit at both sides of the rear body and slidably moved along the rail unit, in which the moving guide protrudes toward the rear body in order to receive the rail unit and cover the rail unit.
摘要:
A power gating circuit includes a logic circuit, a switching element and a retention flip-flop. The logic circuit is coupled between a first power rail and a virtual power rail. The switching element selectively couples the virtual power rail to a second power rail in response to a mode control signal indicating an active mode or a standby mode. The retention flip-flop selectively performs a flip-flop operation or a data retention operation in response to a voltage of the virtual power rail.
摘要:
In a method of estimating a leakage current in semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of the cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function is generated by arithmetically operating the virtual cell leakage characteristic functions of each cell in the segment. Then, a full chip leakage characteristic function is generated by statistically operating the segment leakage characteristic functions of each segment in the chip. Accordingly, the computational loads of Wilkinson's method for generating the full chip leakage characteristic function may be remarkably reduced.
摘要:
Example embodiments relate to a method performed by an apparatus for analyzing time of a semiconductor chip. The method may include defining a netlist, defining time delays of devices defined in the netlist, performing a normality test using the time delays, judging a p-value based on the normality test, and determining a time delay of the semiconductor chip.
摘要:
A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.
摘要:
A semiconductor integrated circuit device includes a semiconductor substrate; a dummy pattern extending in one direction on the semiconductor substrate; a junction region electrically connecting the dummy pattern to the semiconductor substrate; and a voltage applying unit that is configured to apply a bias voltage to the dummy pattern.
摘要:
A plasma display panel and a driving method thereof that is capable of generating a sinusoidal initialization waveform. In the panel, a sinusoidal wave is used for forming wall charges.