利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

18 条记录 (耗时 0.016 秒)

    Housing structure for a slide type mobile communication terminal
    1.
    发明授权
    Housing structure for a slide type mobile communication terminal 有权
    滑动式移动通信终端的外壳结构

    公开(公告)号：US08600448B2

    公开(公告)日：2013-12-03

    申请号：US12797569

    申请日：2010-06-09

    申请人： Yong-Hee Lee ,  Ki-Hyun Kim ,  Bong-Hyun Lee

    发明人： Yong-Hee Lee ,  Ki-Hyun Kim ,  Bong-Hyun Lee

    IPC分类号： H04B1/00 ,  H04M1/00 ,  G06F3/02

    CPC分类号： H04M1/0237

    摘要： A mobile terminal includes a front body, a rear body, and a slide module connecting the front body to the rear body such that the front body is slidable with respect to the rear body, the slide module including a first slide member fixed to a front surface of the rear body and having a rail unit at both sides of the rear body, the rail unit having a specific length corresponding to a slide stroke of the front body; and a second slide member fixed to a rear surface of the front body and having a moving guide constrained to the rail unit at both sides of the rear body and slidably moved along the rail unit, in which the moving guide protrudes toward the rear body in order to receive the rail unit and cover the rail unit.

    摘要翻译： 移动终端包括前身体，后身体和滑动模块，其将前身体连接到后身体，使得前身体相对于后身体可滑动，滑动模块包括固定到前部的第一滑动构件 后体的表面，并且在后体的两侧具有轨道单元，轨道单元具有对应于前身体的滑动行程的特定长度; 以及第二滑动构件，其固定到所述前体的后表面，并且具有被限制在所述后体的两侧处的所述轨道单元并且沿着所述轨道单元滑动地移动的移动引导件，所述移动引导件在所述轨道单元中朝向所述后体突出 接收轨道单元并覆盖轨道单元。

    MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop
    3.
    发明授权
    MTCMOS flip-flop, circuit including the MTCMOS flip-flop, and method of forming the MTCMOS flip-flop 有权
    MTCMOS触发器，包括MTCMOS触发器的电路以及形成MTCMOS触发器的方法

    公开(公告)号：US07453300B2

    公开(公告)日：2008-11-18

    申请号：US11097235

    申请日：2005-04-04

    申请人： Hyo-sig Won ,  Kwangok Jeong ,  Young-hwan Kim ,  Bong-hyun Lee

    发明人： Hyo-sig Won ,  Kwangok Jeong ,  Young-hwan Kim ,  Bong-hyun Lee

    IPC分类号： H03K3/00

    CPC分类号： H03K19/0016 ,  H03K19/0963

    摘要： A multi-threshold voltage complementary metal oxide semiconductor (MTCMOS) flip-flop, a circuit including the MTCMOS flip-flop, and a method of forming the MTCMOS flip-flop are disclosed. The MTCMOS flip-flop breaks a leakage current path during a sleep mode to retain an output data signal. The MTCMOS flip-flop typically further uses a data feedback unit to retain the output data signal.

    摘要翻译： 公开了一种多阈值电压互补金属氧化物半导体（MTCMOS）触发器，包括MTCMOS触发器的电路以及形成MTCMOS触发器的方法。 MTCMOS触发器在休眠模式期间断开漏电流路径以保持输出数据信号。 MTCMOS触发器通常还使用数据反馈单元来保持输出数据信号。

    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same
    7.
    发明申请
    Circuit having an active clock shielding structure and semiconductor intergrated circuit including the same 有权
    具有有源时钟屏蔽结构的电路和包括其的半导体集成电路

    公开(公告)号：US20090237107A1

    公开(公告)日：2009-09-24

    申请号：US12381431

    申请日：2009-03-12

    申请人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    发明人： Bong-Hyun Lee ,  Jung-Yun Choi ,  Jae-Han Jeon ,  Kyung-Tae Do

    IPC分类号： H03K19/003 ,  H04B15/00

    CPC分类号： H04B15/02 ,  H04B2215/064

    摘要： A circuit having an active clock shielding structure includes a logic circuit that receives a clock signal and performs a logic operation based on the clock signal, a power gating circuit that switches a mode of the logic circuit between an active mode and an sleep mode based on a power gating signal, a clock signal transmission line that transmits the clock signal to the logic circuit, and at least one power gating signal transmission line that transmits the power gating signal to the power gating circuit and functions as a shielding line pair with the clock signal transmission line.

    摘要翻译： 具有有源时钟屏蔽结构的电路包括接收时钟信号并基于时钟信号执行逻辑运算的逻辑电路，基于时钟信号切换逻辑电路的模式的功率门控电路，基于 电源门控信号，将时钟信号发送到逻辑电路的时钟信号传输线，以及至少一个电源门控信号传输线，其将电源门控信号发送到电源门控电路并用作与时钟的屏蔽线对 信号传输线。

    SYSTEM AND METHOD FOR ANALYZING TIMING OF SEMICONDUCTOR CHIP
    9.
    发明申请
    SYSTEM AND METHOD FOR ANALYZING TIMING OF SEMICONDUCTOR CHIP 有权
    用于分析半导体芯片时序的系统和方法

    公开(公告)号：US20120212239A1

    公开(公告)日：2012-08-23

    申请号：US13360147

    申请日：2012-01-27

    申请人： Byung-Su Kim ,  Hung Bok Choi ,  Bong Hyun Lee

    发明人： Byung-Su Kim ,  Hung Bok Choi ,  Bong Hyun Lee

    IPC分类号： G01R27/28

    CPC分类号： G06F17/5031 ,  G06F2217/84

    摘要： Example embodiments relate to a method performed by an apparatus for analyzing time of a semiconductor chip. The method may include defining a netlist, defining time delays of devices defined in the netlist, performing a normality test using the time delays, judging a p-value based on the normality test, and determining a time delay of the semiconductor chip.

    摘要翻译： 示例性实施例涉及一种用于分析半导体芯片的时间的装置执行的方法。 该方法可以包括定义网表，定义在网表中定义的设备的时间延迟，使用时间延迟执行正态测试，基于正态测试来判断p值，以及确定半导体芯片的时延。

    Method of estimating a leakage current in a semiconductor device
    10.
    发明授权
    Method of estimating a leakage current in a semiconductor device 有权
    估计半导体器件中漏电流的方法

    公开(公告)号：US08156460B2

    公开(公告)日：2012-04-10

    申请号：US12547729

    申请日：2009-08-26

    申请人： Kyung-Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    发明人： Kyung-Tae Do ,  Jung-Yun Choi ,  Bong-Hyun Lee ,  Young-Hwan Kim ,  Hyo-Sig Won ,  Wook Kim

    IPC分类号： G06F17/50

    CPC分类号： G06F17/5036

    摘要： In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.

    摘要翻译： 在估计半导体器件中的漏电流的方法中，包括多个单元的芯片通过栅格模型被划分为段。 空间相关性被确定为与每个单元中的泄漏电流有关的工艺参数之间的空间相关性。 通过算术运算实际泄漏特性函数产生单元的虚拟单元泄漏特性函数。 通过对片段中所有单元的虚拟单元泄漏特性函数进行算术运算，产生段的段泄漏特性函数。 然后，通过统计操作芯片中所有段的段泄漏特性函数来产生芯片的全芯片泄漏特性功能。 因此，Wilkinson用于产生全芯片泄漏特性功能的方法的计算负载可以显着降低。