公开(公告)号：US11690236B2

公开(公告)日：2023-06-27

申请号：US17672621

申请日：2022-02-15

Applicant: Clap Co., Ltd.

Inventor： Wei Hsiang Lin ,  Mi Zhou ,  JunMin Lee ,  Giseok Lee ,  Stefan Becker

IPC: H01L51/00 ,  H10K10/46 ,  H10K71/20

CPC classification number: H10K10/474 ,  H10K10/464 ,  H10K10/478 ,  H10K10/484 ,  H10K71/231

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R1, R2, R3, R4, R5, R6, R7 and R8 are independently and at each occurrence H or C1-C10-alkyl.

公开(公告)号：US11667650B2

公开(公告)日：2023-06-06

申请号：US17508164

申请日：2021-10-22

Applicant: CLAP Co., Ltd. ,  King Abdullah University of Science and Technology

Inventor： Hu Chen ,  Weimin Zhang ,  Michael Hurhangee ,  Iain McCulloch ,  Pascal Hayoz ,  Daniel Kaelblein

IPC: C07D495/04 ,  C08G61/12 ,  H10K85/10 ,  H10K85/60

CPC classification number: C07D495/04 ,  C08G61/126 ,  H10K85/113 ,  H10K85/151 ,  H10K85/6576 ,  C08G2261/124 ,  C08G2261/146 ,  C08G2261/1412 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/344 ,  C08G2261/414 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/95

Abstract: Polymers comprising at least one unit of formulae




and compounds of the formulae






wherein, in formulae 1, 1′, 2 and 2′
n is 0, 1, 2, 3 or 4
m is 0, 1, 2, 3 or 4
M1 and M2 are independently of each other an aromatic or heteroaromatic monocyclic or bicyclic ring system;
X is at each occurrence selected from the group consisting of O, S, Se or Te,
Q is at each occurrence selected from the group consisting of C, Si or Ge
R is at each occurrence selected from the group consisting of hydrogen, C1-100-alkyl, C2-100-alkenyl, C2-100-alkynyl, C5-12-cycloalkyl, C6-18-aryl, a 5 to 20 membered heteroaryl, C(O)—C1-100-alkyl, C(O)—C5-12-cycloalkyl and C(O)—OC1-100-alkyl.
R2, R2′, R2″, R* are at each occurrence independently selected from the group consisting of hydrogen, C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-12-cycloalkyl, C6-18-aryl, 5 to 20 membered heteroaryl, OR21, OC(O)—R21, C(O)—OR21, C(O)—R21, NR21R22, NR21—C(O)R22, C(O)—NR21R22, N[C(O)R21][C(O)R22], SR21, halogen, CN, SiRSisRSitRSiu and OH,
L1 and L2 are independently from each other and at each occurrence selected from the group consisting of C6-30-arylene, 5 to 30 membered heteroarylene,

公开(公告)号：US10793668B2

公开(公告)日：2020-10-06

申请号：US16060728

申请日：2016-12-08

Applicant: CLAP Co., Ltd.

Inventor： Pascal Hayoz ,  Daniel Kaelblein ,  Iain McCulloch ,  Astrid-Caroline Knall

IPC: C08G61/12 ,  C07D495/04 ,  H01L51/00 ,  H01L51/05

Abstract: Polymers comprising at least one unit of formula 1 and compounds of the formula 1′ wherein, in formulae 1 and 1′ n is 0, 1, 2, 3 or 4 m is 0, 1, 2, 3 or 4 X is at each occurrence selected from the group consisting of O, S, Se or Te, Q is at each occurrence selected from the group consisting of C, Si or Ge R is at each occurrence selected from the group consisting of hydrogen, C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-12-cycloalkyl, C6-18-aryl, R2, R2′, R* are at each occurrence independently selected from the group consisting of hydrogen, C1-30-alkyl, C2-30-alkenyl, C2-30-alkynyl, C5-12-cycloalkyl, C6-18-aryl, 5 to 20 membered hetero-aryl, OR21, OC(O)—R21, C(O)—OR21, C(O)—R21, NR21R22, NR21—C(O)R22, C(O)—NR21R22, N[C(O)R21][C(O)R22], SR21, halogen, CN, SiRSisRSitRSiu and OH, L1 and L2 are independently from each other and at each occurrence selected from the group consisting of C6-30-arylene, 5 to 30 membered heteroarylene.

公开(公告)号：US20240247186A1

公开(公告)日：2024-07-25

申请号：US18491206

申请日：2023-10-20

Applicant: ND-Materials Corp. ,  Clap Co., Ltd.

Inventor： Jang Hyuk Kwon ,  Gyeong Min Ki ,  Sung Ho Kim ,  Kang II Seo ,  Mi Young Chae ,  Young Hun Jung

IPC: C09K11/06 ,  C09K11/02 ,  H10K59/38

CPC classification number: C09K11/06 ,  C09K11/025 ,  H10K59/38 ,  C09K2211/1018 ,  G02F1/133514

Abstract: Provided are light-emitting organic nanoparticles containing an organic phosphor having a luminous efficiency of 80% or more, wherein the light-emitting organic nanoparticles has an average particle size of 100 to 170 nm and a standard deviation of particle sizes of 500 nm or less, a composition for a color conversion film including the same, and a color conversion film, a display device, and a light-emitting diode device manufactured using the same.

公开(公告)号：US11296290B2

公开(公告)日：2022-04-05

申请号：US16978659

申请日：2019-02-27

Applicant: Clap Co., Ltd.

Inventor： Wei Hsiang Lin ,  Mi Zhou ,  JunMin Lee ,  Giseok Lee ,  Stefan Becker

IPC: H01L51/05 ,  H01L51/00

Abstract: The present invention relates to a process for the preparation of a top-gate, bottom-contact organic field effect transistor on a substrate, which organic field effect transistor comprises source and drain electrodes, a semiconducting layer, a cured first dielectric layer and a gate electrode, and which process comprises the steps of: i) applying a composition comprising an organic semiconducting material to form the semiconducting layer, ii) applying a composition comprising a first dielectric material and a crosslinking agent carrying at least two azide groups to form a first dielectric layer, iii) curing portions of the first dielectric layer by light treatment, iv) removing the uncured portions of the first dielectric layer, and v) removing the portions of the semiconducting layer that are not covered by the cured first dielectric layer, wherein the first dielectric material comprises a star-shaped polymer consisting of at least one polymer block A and at least two polymer blocks B, wherein each polymer block B is attached to the polymer block A, and wherein at least 60 mol % of
the repeat units of polymer block B are selected from the group consisting of Formulas (1A), (1B), (1C), (1D), (1E) and (1F), wherein R1, R2, R3, R4, R5, R6, R7 and R8 are independently and at each occurrence H or C1-C10-alkyl.

公开(公告)号：US20210277157A1

公开(公告)日：2021-09-09

申请号：US17255397

申请日：2019-05-22

Applicant: Clap Co., Ltd.

Inventor： Daniel KAELBLEIN ,  Fulvio Giacomo BRUNETTI ,  Georg BECK ,  Daniel BAHL ,  Ulrich BERENS ,  Ingo MUENSTER

IPC: C08F216/14 ,  C08F212/14

Abstract: The present invention provides polymers comprising units of formula (1) as well as compositions comprising the polymers, processes for the preparation of the polymers, electronic devices comprising the polymers, and processes for the preparation of the electronic devices, and the use of the polymers as dielectric materials.

公开(公告)号：US10741762B2

公开(公告)日：2020-08-11

申请号：US14394348

申请日：2013-04-30

Applicant: CLAP Co., Ltd.

Inventor： Thomas Musiol ,  Dieter Freyberg ,  Jochen Brill

IPC: H01L51/00 ,  C09B57/10 ,  C09B57/08 ,  C23C14/12 ,  C09B57/00 ,  H01L51/56

Abstract: The present invention relates to a method for the deposition of at least one layer of an organic material on a substrate by (a) providing a source of a solid organic material in an atmosphere at a pressure comprised between 50 and 200 kPa, (b) heating said organic material to a first temperature to produce a vapor of said organic material, (c) exposing at least one surface of a substrate having a second temperature lower than said first temperature to said vapor to deposit organic material from said vapor onto said at least one surface of said substrate.