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11.发明申请Techniques to reduce substrate cross talk on mixed signal and RF circuit design 有权降低混合信号和RF电路设计的基板串扰技术公开(公告)号：US20050212071A1
公开(公告)日：2005-09-29
申请号：US10811207
申请日：2004-03-26
申请人： Cheisan Yue , James Seefeldt
发明人： Cheisan Yue , James Seefeldt
IPC分类号： H01L21/762 , H01L21/765 , H01L29/732
CPC分类号： H01L21/76283 , H01L21/765 , H01L21/84 , H01L27/1203
摘要： An integrated circuit has a buried insulation layer formed over a semiconductor substrate, and a semiconductor mesa formed over the buried insulation layer. A low resistivity guard ring substantially surrounds the semiconductor mesa and is in contact with the semiconductor substrate. The low resistivity guard ring is grounded and isolates the semiconductor mesa from RF signals.
摘要翻译： 集成电路具有形成在半导体衬底上的掩埋绝缘层和形成在掩埋绝缘层上的半导体台面。 低电阻率保护环基本上围绕半导体台面并与半导体衬底接触。 低电阻率保护环接地，并将半导体台面与RF信号隔离开来。
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12.发明申请Silicon-insulator-silicon thin-film structures for optical modulators and methods of manufacture 失效用于光学调制器的硅绝缘体 - 硅薄膜结构和制造方法公开(公告)号：US20050207691A1
公开(公告)日：2005-09-22
申请号：US10915299
申请日：2004-08-10
申请人： Thomas Keyser , Cheisan Yue , Bradley Larsen
发明人： Thomas Keyser , Cheisan Yue , Bradley Larsen
摘要： The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.
摘要翻译： 本发明提供了可用于形成高频光学调制器的硅基薄膜结构。 本发明的器件形成为具有夹在硅层之间的诸如二氧化硅的薄膜电介质层的分层结构。 硅层具有高自由载流子迁移率。 在本发明的一个方面，可以通过使非晶硅层结晶来提供高迁移率硅层。 在本发明的另一方面，通过使用选择性外延生长和其延伸的横向过度生长，可以提供高迁移率硅层。
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