公开(公告)号：US20130221404A1

公开(公告)日：2013-08-29

申请号：US13405001

申请日：2012-02-24

申请人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

发明人： Ching-Lin Chan ,  Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shin-Chin Lien

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L21/22 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66325 ,  H01L29/66674 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

摘要： A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.

摘要翻译： 提供半导体结构及其形成方法。 半导体结构包括第一掺杂区，第二掺杂区，掺杂条和顶掺杂区。 第一掺杂区域具有第一类型的导电性。 第二掺杂区域形成在第一掺杂区域中并且具有与第一类型导电性相反的第二类型导电性。 掺杂条形成在第一掺杂区中，具有第二类型的导电性。 顶部掺杂区形成在掺杂条中，具有第一类型的导电性。 顶部掺杂区域具有与第一侧壁相对的第一侧壁和第二侧壁。 掺杂的带延伸超过第一侧壁或第二侧壁。

公开(公告)号：US20120280316A1

公开(公告)日：2012-11-08

申请号：US13101486

申请日：2011-05-05

申请人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

发明人： Chen-Yuan Lin ,  Cheng-Chi Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0684 ,  H01L29/0634 ,  H01L29/0692 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66689 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/861

摘要： A semiconductor structure and a manufacturing method for the same are provided. The semiconductor structure includes a first doped well, a first doped electrode, a second doped electrode, doped strips and a doped top region. The doped strips are on the first doped well between the first doped electrode and the second doped electrode. The doped strips are separated from each other. The doped top region is on the doped strips and extended on the first doped well between the doped strips. The first doped well and the doped top region have a first conductivity type. The doped strips have a second conductivity type opposite to the first conductivity type.

摘要翻译： 提供了一种半导体结构及其制造方法。 半导体结构包括第一掺杂阱，第一掺杂电极，第二掺杂电极，掺杂条和掺杂顶区。 掺杂条在第一掺杂电极和第二掺杂电极之间的第一掺杂阱上。 掺杂的条带彼此分离。 掺杂的顶部区域在掺杂的条带上并且在掺杂条带之间的第一掺杂阱上延伸。 第一掺杂阱和掺杂顶区具有第一导电类型。 掺杂的条带具有与第一导电类型相反的第二导电类型。

公开(公告)号：US20110140201A1

公开(公告)日：2011-06-16

申请号：US12775440

申请日：2010-05-06

申请人： Cheng-Chi Lin ,  Chen-Yuan Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

发明人： Cheng-Chi Lin ,  Chen-Yuan Lin ,  Shih-Chin Lien ,  Shyi-Yuan Wu

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7816 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1087 ,  H01L29/42368 ,  H01L29/66689

摘要： A lateral power MOSFET with a low specific on-resistance is described. Stacked P-top and N-grade regions in patterns of articulated circular arcs separate the source and drain of the transistor.

摘要翻译： 描述具有低比导通电阻的横向功率MOSFET。 铰接圆弧形图案中堆叠的P顶和N级区分离晶体管的源极和漏极。

公开(公告)号：US5947305A

公开(公告)日：1999-09-07

申请号：US84111

申请日：1998-05-26

申请人： Chen Yuan Lin

发明人： Chen Yuan Lin

IPC分类号： A47B73/00

CPC分类号： A47B73/006

摘要： A modular rack for holding wine bottles is formed of a plurality of base frames and support rods. The base frames are provided in the center thereof with a bottle-holding space and in the periphery thereof with a plurality of tenons, mortises, and slots. The base frames are arranged together in various ways such that the tenons of one of the base frames are retained in the mortises of another one of the base frames, and that the support rods are engaged with the slots of the base frames.

摘要翻译： 用于容纳葡萄酒瓶的模块化机架由多个基架和支撑杆形成。 底座在其中央设置有瓶保持空间，并且在其周边设置有多个榫眼，榫眼和狭槽。 底座以各种方式布置在一起，使得一个基架的榫头保持在另一个基架的榫眼中，并且支撑杆与基架的槽接合。