公开(公告)号：US08264066B2

公开(公告)日：2012-09-11

申请号：US12617900

申请日：2009-11-13

Applicant: Ching-Yu Lo ,  Hung-Jung Tu ,  Hai-Ching Chen ,  Tien-I Bao ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Ching-Yu Lo ,  Hung-Jung Tu ,  Hai-Ching Chen ,  Tien-I Bao ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L29/40

CPC classification number: H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L2221/68372 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.

Abstract translation: 集成电路结构包括半导体衬底; 贯穿半导体衬底的贯通半导体通孔（TSV）开口; 和TSV开口的TSV衬管。 TSV衬套包括在TSV开口的侧壁上的侧壁部分和TSV开口底部的底部。 TSV衬管的底部部分的底部高度大于TSV衬套的侧壁部分的中间厚度。

公开(公告)号：US20120289062A1

公开(公告)日：2012-11-15

申请号：US13562101

申请日：2012-07-30

Applicant: Ching-Yu Lo ,  Hung-Jung Tu ,  Hai-Ching Chen ,  Tien-I Bao ,  Wen-Chih Chiou ,  Chen-Hua Yu

Inventor： Ching-Yu Lo ,  Hung-Jung Tu ,  Hai-Ching Chen ,  Tien-I Bao ,  Wen-Chih Chiou ,  Chen-Hua Yu

IPC: H01L21/71

CPC classification number: H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/02 ,  H01L2221/68372 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2224/05552 ,  H01L2924/00

Abstract: An integrated circuit structure includes a semiconductor substrate; a through-semiconductor via (TSV) opening extending into the semiconductor substrate; and a TSV liner in the TSV opening. The TSV liner includes a sidewall portion on a sidewall of the TSV opening and a bottom portion at a bottom of the TSV opening. The bottom portion of the TSV liner has a bottom height greater than a middle thickness of the sidewall portion of the TSV liner.

Abstract translation: 集成电路结构包括半导体衬底; 贯穿半导体衬底的贯通半导体通孔（TSV）开口; 和TSV开口的TSV衬管。 TSV衬套包括在TSV开口的侧壁上的侧壁部分和TSV开口底部的底部。 TSV衬管的底部部分的底部高度大于TSV衬套的侧壁部分的中间厚度。