公开(公告)号：US20060160374A1

公开(公告)日：2006-07-20

申请号：US11233988

申请日：2005-09-09

Applicant: Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

Inventor： Dustin Ho ,  Derek Witty ,  Helen Armer ,  Hichem M'Saad

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/76801 ,  C23C16/401 ,  C23C16/4405 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/7682 ,  H01L21/76828 ,  H01L2221/1047

Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.

公开(公告)号：US20060270221A1

公开(公告)日：2006-11-30

申请号：US11459585

申请日：2006-07-24

Applicant: Hichem M'Saad ,  Dustin Ho ,  Juan Rocha-Alvarez

Inventor： Hichem M'Saad ,  Dustin Ho ,  Juan Rocha-Alvarez

IPC: H01L21/44 ,  C23C16/00 ,  H01L21/31

CPC classification number: H01L21/76826 ,  C23C16/401 ,  C23C16/45523 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31633 ,  H01L21/76829

Abstract: A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is deposited from a gas mixture comprising an organosilicon compound and an oxidizing gas in the presence of RF power in a chamber. The RF power and a flow of the organosilicon compound and the oxidizing gas are continued in the chamber after the deposition of the low dielectric constant film at flow rates sufficient to deposit an oxide rich cap on the low dielectric constant film.

Abstract translation: 提供一种处理衬底的方法，包括在衬底上沉积包含硅，碳和氧的低介电常数膜并在低介电常数膜上沉积氧化物富盖。 在室内存在RF功率的情况下，从包含有机硅化合物和氧化气体的气体混合物中沉积低介电常数膜。 在低介电常数薄膜以低于在低介电常数膜上沉积富含氧化物的盖子的流速下沉积后，室内继续进行RF功率和有机硅化合物和氧化气体的流动。