公开(公告)号：US09219037B2

公开(公告)日：2015-12-22

申请号：US13603008

申请日：2012-09-04

申请人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

发明人： Stephen M. Gates ,  Alfred Grill ,  Son Nguyen ,  Satyanarayana V. Nitta ,  Thomas M. Shaw

IPC分类号： B05D3/06 ,  B05D3/14 ,  C08J7/18 ,  H01L23/532 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  H01L21/316 ,  C23C16/511 ,  H01L21/768

CPC分类号： H01L23/5329 ,  C23C16/401 ,  C23C16/505 ,  C23C16/511 ,  C23C16/56 ,  H01J2237/336 ,  H01J2237/338 ,  H01J2237/3382 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02345 ,  H01L21/02348 ,  H01L21/02351 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A porous SiCOH dielectric film in which the stress change caused by increased tetrahedral strain is minimized by post treatment in unsaturated Hydrocarbon ambient. The p-SiCOH dielectric film has more —(CHx) and less Si—O—H and Si—H bonding moieties. Moreover, a stable pSiOCH dielectric film is provided in which the amount of Si—OH (silanol) and Si—H groups at least within the pores has been reduced by about 90% or less by the post treatment. A p-SiCOH dielectric film is produced that is flexible since the pores include stabilized crosslinking —(CHx)— chains wherein x is 1, 2 or 3 therein. The dielectric film is produced utilizing an annealing step subsequent deposition that includes a gaseous ambient that includes at least one C—C double bond and/or at least one C—C triple bond.

摘要翻译： 通过在不饱和烃环境中后处理，使四面体应变增加引起的应力变化最小化的多孔SiCOH介电膜。 p-SiCOH电介质膜具有更多的（（CH x））和更少的Si-O-H和Si-H键合部分。 此外，提供稳定的pSiOCH电介质膜，其中至少在孔内的Si-OH（硅烷醇）和Si-H基团的量通过后处理减少约90％以下。 由于气孔包括其中x为1,2或3的稳定的交联 - （CH x） - 链，因此制备柔性的p-SiCOH介电膜。 介电膜是利用包括至少一个C-C双键和/或至少一个C-C三键的气态环境的退火步骤进行的。

公开(公告)号：US08974870B2

公开(公告)日：2015-03-10

申请号：US13226208

申请日：2011-09-06

申请人： Mikhail Baklanov ,  Quoc Toan Le ,  Laurent Souriau ,  Patrick Verdonck

发明人： Mikhail Baklanov ,  Quoc Toan Le ,  Laurent Souriau ,  Patrick Verdonck

IPC分类号： H05H1/00 ,  B05D3/06 ,  B05D3/02 ,  C23C16/40 ,  C23C16/56 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/768

CPC分类号： C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31633 ,  H01L21/7682 ,  H01L2221/1047

摘要： Methods for fabricating porous low-k materials are provided, such as plasma enhanced chemically vapor deposited (PE-CVD) and chemically vapor deposited (CVD) low-k films used as dielectric materials in between interconnect structures in semiconductor devices. More specifically, a new method is provided which results in a low-k material with significant improved chemical stability and improved elastic modulus, for a porosity obtained.

摘要翻译： 提供了制造多孔低k材料的方法，例如在半导体器件的互连结构之间用作介电材料的等离子体增强化学气相沉积（PE-CVD）和化学气相沉积（CVD）低k膜。 更具体地，提供了一种新方法，其导致获得的孔隙率的低k材料具有显着改善的化学稳定性和改善的弹性模量。

公开(公告)号：US08940648B2

公开(公告)日：2015-01-27

申请号：US13964658

申请日：2013-08-12

申请人： Air Products and Chemicals, Inc.

发明人： Manchao Xiao ,  Xinjian Lei ,  Heather Regina Bowen ,  Mark Leonard O'Neill

IPC分类号： H01L21/31 ,  H01L21/02 ,  C07F7/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/314 ,  H01L21/316

CPC分类号： H01L21/02211 ,  C07F7/025 ,  C23C16/402 ,  C23C16/45553 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633

摘要： A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: wherein R is selected from a C1-C10 linear, branched, or cyclic, saturated or unsaturated alkyl group with or without substituents; a C5-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, or a silyl group in formula C with or without substituents, R1 is selected from a C3-C10 linear, branched, cyclic, saturated or unsaturated alkyl group with or without substituents; a C6-C10 aromatic group with or without substituents, a C3-C10 heterocyclic group with or without substituents, a hydrogen atom, a silyl group with substituents and wherein R and R1 in formula A can be combined into a cyclic group and R2 representing a single bond, (CH2), chain, a ring, C3-C10 branched alkyl, SiR2, or SiH2.

摘要翻译： 本文描述了使用有机氨基硅烷在基板上沉积含硅膜的方法。 有机基氨基硅烷由下式表示：其中R选自具有或不具有取代基的C1-C10直链，支链或环状饱和或不饱和的烷基; 具有或不具有取代基的C 5 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基或具有或不具有取代基的式C中的甲硅烷基，其选自C 3 -C 10直链，支链，环状，饱和或 有或没有取代基的不饱和烷基; 具有或不具有取代基的C 6 -C 10芳族基团，具有或不具有取代基的C 3 -C 10杂环基，氢原子，具有取代基的甲硅烷基，并且其中式A中的R和R可以组合成环状基团，并且R 2表示 单键，（CH2），链，环，C3-C10支链烷基，SiR2或SiH2。

公开(公告)号：US08906455B2

公开(公告)日：2014-12-09

申请号：US13624190

申请日：2012-09-21

申请人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

发明人： Liu Yang ,  Xinjian Lei ,  Bing Han ,  Manchao Xiao ,  Eugene Joseph Karwacki, Jr. ,  Hansong Cheng

IPC分类号： C23C16/00 ,  H01L21/02 ,  H01L21/316 ,  H01L21/318 ,  C23C16/34 ,  H01L21/314 ,  C23C16/40 ,  C23C16/455 ,  C23C16/30

CPC分类号： H01L21/02271 ,  C23C16/308 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3145 ,  H01L21/31608 ,  H01L21/31633 ,  H01L21/3185

摘要： This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

摘要翻译： 本发明公开了在低沉积温度下形成氮化硅，氮氧化硅，氧化硅，碳掺杂氮化硅，碳掺杂氧化硅和碳掺杂氧氮化物膜的方法。 用于沉积的含硅前体是一氯硅烷（MCS）和一氯代烷基硅烷。 该方法优选通过使用等离子体增强原子层沉积，等离子体增强化学气相沉积和等离子体增强循环化学气相沉积来进行。

公开(公告)号：US08759222B2

公开(公告)日：2014-06-24

申请号：US11680709

申请日：2007-03-01

申请人： Tsutomu Shimayama ,  Takatoshi Kameshima ,  Masaki Okamoto

发明人： Tsutomu Shimayama ,  Takatoshi Kameshima ,  Masaki Okamoto

IPC分类号： H01L21/311

CPC分类号： H01L21/7682 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02351 ,  H01L21/31116 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76825 ,  H01L21/76835 ,  H01L2221/1036 ,  H01L2221/1047

摘要： Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.

摘要翻译： 本发明公开了一种制造半导体器件的方法，该方法包括用具有无机材料的骨架结构的叠层结构中的双层绝缘膜涂覆基板的第一步骤，以及将绝缘膜的上层蚀刻到远处的第二步骤 作为绝缘膜的下层。 在半导体器件的制造方法中，第一步是以骨架结构与烃化合物的成孔材料结合的方式进行，使得一层绝缘膜含有比另一层更多的碳 绝缘膜。

公开(公告)号：US08563421B2

公开(公告)日：2013-10-22

申请号：US13363673

申请日：2012-02-01

申请人： Jin-Gyun Kim ,  Bon-young Koo ,  Ki-hyun Hwang

发明人： Jin-Gyun Kim ,  Bon-young Koo ,  Ki-hyun Hwang

IPC分类号： H01L21/4763

CPC分类号： H01L29/4991 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/02362 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/3185 ,  H01L21/764 ,  H01L21/7682 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/4983

摘要： A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and forming a dielectric layer filling an upper portion of a space between the adjacent wirings to form air gaps by a thermal chemical vapor deposition method.

摘要翻译： 提供一种形成具有气隙以隔离相邻配线或半导体器件的栅极叠层的电介质层的方法。 一种制造半导体器件的方法包括提供半导体衬底，多个布线彼此相邻地形成有多个布线，并形成填充相邻布线之间的空间的上部的介电层，以通过热化学气相沉积形成空隙 方法。

公开(公告)号：US08384208B2

公开(公告)日：2013-02-26

申请号：US11826093

申请日：2007-07-12

申请人： Yoshinori Shishida ,  Shinichi Chikaki ,  Ryotaro Yagi ,  Kazuo Kohmura ,  Hirofumi Tanaka

发明人： Yoshinori Shishida ,  Shinichi Chikaki ,  Ryotaro Yagi ,  Kazuo Kohmura ,  Hirofumi Tanaka

IPC分类号： H01L23/12 ,  H01L23/053

CPC分类号： H01L21/31138 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/318 ,  H01L21/76807 ,  H01L21/76825 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76835 ,  Y10T428/2495

摘要： A semiconductor device capable of improving a mechanical strength of a porous silica film while inhibiting a film located on a lower layer of the porous silica film from deterioration is obtained. This semiconductor device includes an organic film formed on a semiconductor substrate, an ultraviolet light permeation suppressive film, formed on a surface of the organic film, composed of a material which is difficult to be permeable by ultraviolet light, and a first porous silica film formed on a surface of the ultraviolet light permeation suppressive film.

摘要翻译： 获得能够提高多孔二氧化硅膜的机械强度同时抑制位于多孔二氧化硅膜的下层上的膜劣化的半导体器件。 该半导体装置包括形成在半导体基板上的有机膜，形成在有机膜表面上的由紫外线难以透过的材料构成的紫外线透过抑制膜和形成有第一多孔二氧化硅膜 在紫外线透过抑制膜的表面上。

公开(公告)号：US08298965B2

公开(公告)日：2012-10-30

申请号：US12553843

申请日：2009-09-03

申请人： James J. F. McAndrew ,  Francois Doniat

发明人： James J. F. McAndrew ,  Francois Doniat

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  B05D1/62 ,  B05D3/0254 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31695

摘要： Disclosed herein are precursors and methods for their use in the manufacture of semiconductor, photovoltaic, TFT-LCD, or flat panel type devices.

摘要翻译： 本文公开了其用于制造半导体，光伏，TFT-LCD或平板型器件的前体和方法。

公开(公告)号：US20120258595A1

公开(公告)日：2012-10-11

申请号：US13251952

申请日：2011-10-03

申请人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

发明人： David E. Lazovsky ,  Sandra G. Malhotra ,  Thomas R. Boussie

IPC分类号： H01L21/44

CPC分类号： H01L21/76829 ,  B82Y30/00 ,  H01L21/02183 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/31695 ,  H01L21/3185 ,  H01L21/76826 ,  H01L21/76849

摘要： A masking layer is formed on a dielectric region of an electronic device so that, during subsequent formation of a capping layer on electrically conductive regions the masking layer inhibits formation of capping layer material on the dielectric region. The capping layer can be formed selectively on the electrically conductive regions or non-selectively; in either case, capping layer material formed over the dielectric region can subsequently be removed, thus ensuring that capping layer material is formed only on the electrically conductive regions. Silane-based materials, such as silane-based SAMs, can be used to form the masking layer. The capping layer can be formed of an electrically conductive, a semiconductor material, or an electrically insulative material, and can be formed using any appropriate process, including conventional deposition processes such as electroless deposition, chemical vapor deposition, physical vapor deposition or atomic layer deposition.

摘要翻译： 在电子器件的电介质区域上形成掩模层，使得在导电区域之后形成覆盖层时，掩模层阻止在电介质区域上形成覆盖层材料。 可以选择性地在导电区域或非选择性地形成覆盖层; 在任一种情况下，形成在电介质区域上的覆盖层材料随后可以被去除，从而确保覆盖层材料仅在导电区域上形成。 可以使用诸如硅烷基SAM之类的硅烷基材料来形成掩模层。 覆盖层可以由导电，半导体材料或电绝缘材料形成，并且可以使用任何适当的工艺形成，包括常规沉积工艺，例如无电沉积，化学气相沉积，物理气相沉积或原子层沉积 。

公开(公告)号：US08115318B2

公开(公告)日：2012-02-14

申请号：US12773493

申请日：2010-05-04

申请人： Koichi Ohto ,  Toshiyuki Takewaki ,  Tatsuya Usami ,  Nobuyuki Yamanishi

发明人： Koichi Ohto ,  Toshiyuki Takewaki ,  Tatsuya Usami ,  Nobuyuki Yamanishi

IPC分类号： H01L23/48

CPC分类号： H01L21/022 ,  H01L21/02074 ,  H01L21/02118 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02203 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3124 ,  H01L21/3148 ,  H01L21/31633 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/32136 ,  H01L21/76801 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76838 ,  H01L21/76849 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76886 ,  H01L21/76889 ,  H01L23/53233 ,  H01L23/53238 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.

摘要翻译： 在半导体器件中，在绝缘底层上形成具有凹槽的绝缘中间层。 不含金属硅化物的硅扩散金属层埋入槽内。 在硅扩散金属层和绝缘中间层上形成金属扩散阻挡层。