公开(公告)号：US20250105027A1

公开(公告)日：2025-03-27

申请号：US18830681

申请日：2024-09-11

Applicant: HPSP Co., Ltd.

Inventor： Si Hyung LEE ,  Kunyoung LIM ,  Bin Hong MIN ,  Hyeseong YOON

IPC: H01L21/67 ,  H01L21/02

Abstract: Disclosed are a high pressure gaseous hydrogen oxide providing device, and a high pressure substrate processing apparatus and method using the same. The high pressure substrate processing method includes reacting a hydrogen gas and an oxygen gas, obtaining a generated hydrogen oxide having a first pressure, converting the generated hydrogen oxide into a processed gaseous hydrogen oxide having a second pressure higher than the first pressure and an atmospheric pressure, and acting the processed gaseous hydrogen oxide on a substrate to be processed in a processing area.

公开(公告)号：US20250054771A1

公开(公告)日：2025-02-13

申请号：US18722044

申请日：2022-12-20

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: H01L21/3115

Abstract: The present invention provides a method for doping carbon in a thin film on a wafer, the method comprising the steps of: arranging a thin film-formed wafer in a processing area; supplying an atmospheric gas into the processing area to bring the pressure in the processing area to a process pressure higher than atmospheric pressure; heating the processing area to bring the temperature in the processing area to a processing temperature; and supplying a source gas containing carbon to the processing area to allow the source gas to undergo a chemical reaction with the thin film under the process pressure at the process temperature, thereby injecting the carbon into the thin film.

公开(公告)号：US20250051916A1

公开(公告)日：2025-02-13

申请号：US18913139

申请日：2024-10-11

Applicant: HPSP Co., Ltd.

Inventor： Sung Kil CHO

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/02

Abstract: The present disclosure provides a high-pressure substrate processing apparatus and a high-pressure chemical vapor deposition method for a substrate, using same, the high-pressure substrate processing apparatus comprising: a chamber having an inner space in which a substrate to be processed is accommodated; a fluid supply module which communicates with the inner space and is configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module which communicate with the inner space and are configured to exhaust the fluid through different paths, wherein the adjustment amount of the first exhaust module for the pressure in the inner space is smaller than the adjustment amount of the second exhaust module, and the first exhaust module operates only when the inner space is in a high pressure higher than atmospheric pressure.

公开(公告)号：US20240339338A1

公开(公告)日：2024-10-10

申请号：US18750482

申请日：2024-06-21

Applicant: HPSP Co., Ltd.

Inventor： Chul Hee SHIN

IPC: H01L21/67

CPC classification number: H01L21/67017

Abstract: The present invention provides a wafer processing apparatus for a combined high-pressure process and vacuum process, and a wafer processing method using decompression, the wafer treatment apparatus comprising: a process chamber having a processing area for processing a wafer; a gas supply module configured to supply a processing gas to the processing area for the processing area to reach a high-pressure state; gas exhaust module configured to exhaust the processing gas from the processing area for the processing area to reach a normal-pressure state; a gas intake module configured to suction residual gas in the processing gas from the processing area for the processing area to reach a vacuum state; and a control module configured to control the gas supply module, the gas exhaust module, and the gas intake module for the wafer processing to be performed under pressure changes from the high-pressure state through the normal-pressure state to the vacuum state.

公开(公告)号：US20240096662A1

公开(公告)日：2024-03-21

申请号：US18467848

申请日：2023-09-15

Applicant: HPSP Co., Ltd.

Inventor： Kun Young LIM ,  Bin Hong MIN

IPC: H01L21/67 ,  H01L21/66

CPC classification number: H01L21/67103 ,  H01L22/26 ,  H01L22/34

Abstract: Provided is a high pressure processing apparatus including: a first chamber accommodating an object to be processed; a second chamber surrounding the first chamber and heating the first chamber; a third chamber including a 3-1-th chamber surrounding a portion of the second chamber and a 3-2-th chamber surrounding another portion of the second chamber; and a supply module supplying a process gas for processing the object in the first chamber at a first pressure, supplying a protection gas to a space between the second chamber and the first chamber at a second pressure set in relation to the first pressure, and supplying a defense gas to a space between each of the 3-1-th chamber and the 3-2-th chamber and the second chamber at a third pressure lower than the first pressure and the second pressure and higher than an external pressure of the third chamber to block external air from being introduced into the third chamber.