公开(公告)号：US08231798B2

公开(公告)日：2012-07-31

申请号：US12578844

申请日：2009-10-14

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Ryuzou Houchin ,  Hiroyuki Suzuki

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Ryuzou Houchin ,  Hiroyuki Suzuki

IPC分类号： B44C1/22

CPC分类号： F27D5/0068 ,  H01J37/321 ,  H01J37/32706 ,  H01L21/3065 ,  H01L21/67069

摘要： A tray for a dry etching apparatus includes substrate accommodation holes penetrating a thickness direction and a substrate support portion supporting an outer peripheral edge portion of a lower surface of a substrate. A dielectric plate includes a tray support surface supporting a lower surface of the tray, substrate placement portions inserted from a lower surface side of the tray into the substrate accommodation holes and having a substrate placement surface at its upper end surface. A dc voltage applying mechanism applies a dc voltage to an electrostatic attraction electrode. A heat conduction gas supply mechanism supplies a heat conduction gas between the substrate and substrate placement surface. The substrate is retained on the substrate placement surface with high degree of adhesion. Cooling efficiency of the substrate is improved and processing is uniform at the entire region of the substrate surface.

摘要翻译： 用于干蚀刻装置的托盘包括穿透厚度方向的基板容纳孔和支撑基板的下表面的外周边缘部分的基板支撑部。 电介质板包括支撑托盘的下表面的托盘支撑表面，从托盘的下表面侧插入到基板容纳孔中的基板放置部分，并且在其上端表面具有基板放置表面。 直流电压施加机构对静电吸引电极施加直流电压。 导热气体供给机构在基板和基板配置面之间提供导热气体。 基板被保持在基板放置表面上，具有高度的附着力。 提高了基板的冷却效率，并且在基板表面的整个区域处理均匀。

公开(公告)号：US07736528B2

公开(公告)日：2010-06-15

申请号：US12090214

申请日：2006-10-10

申请人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Ryuzou Houchin ,  Hiroyuki Suzuki

发明人： Shogo Okita ,  Hiromi Asakura ,  Syouzou Watanabe ,  Ryuzou Houchin ,  Hiroyuki Suzuki

IPC分类号： C03C15/00 ,  C23F1/00

CPC分类号： F27D5/0068 ,  H01J37/321 ,  H01J37/32706 ,  H01L21/3065 ,  H01L21/67069

摘要： A tray 15 for a dry etching apparatus 1 has substrate accommodation holes 19A to 19D penetrating thickness direction and a substrate support portion 21 supporting an outer peripheral edge portion of a lower surface 2a of a substrate 2. A dielectric plate 23 has a tray support surface 28 supporting a lower surface of the tray 15, substrate placement portions 29A through 29D inserted from a lower surface side of the tray 15 into the substrate accommodation holes 19A through 19D and having a substrate placement surface 31 at its upper end surface for placing the substrate 2. A dc voltage applying mechanism 43 applies a dc voltage to an electrostatic attraction electrode 40. A heat conduction gas supply mechanism 45 supplies a heat conduction gas between the substrate 2 and substrate placement surface 31. The substrate 2 can be retained on the substrate placement surface 31 with high degree of adhesion. This results in that the cooling efficiency of the substrate 2 is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

摘要翻译： 用于干蚀刻装置1的托盘15具有穿透厚度方向的基板容纳孔19A至19D以及支撑基板2的下表面2a的外周边缘部分的基板支撑部21.电介质板23具有托盘支撑表面 28，支撑托盘15的下表面，从托盘15的下表面侧插入到基板容纳孔19A至19D中的基板放置部分29A至29D，并且在其上端面具有用于放置基板的基板放置表面31 直流电压施加机构43对静电吸引电极40施加直流电压。导热气体供给机构45在基板2和基板配置面31之间供给导热气体。基板2能够保持在基板 放置面31具有高度的粘合力。 这导致基板2的冷却效率提高，并且在包括外周边缘附近的基板表面的整个区域处理均匀。

公开(公告)号：US20100089870A1

公开(公告)日：2010-04-15

申请号：US12532268

申请日：2008-03-19

申请人： Mitsuru Hiroshima ,  Hiromi Asakura

发明人： Mitsuru Hiroshima ,  Hiromi Asakura

IPC分类号： C23F1/00 ,  C23C16/00 ,  C23F1/08 ,  C23C16/505

CPC分类号： H05H1/46 ,  C23C16/45574 ,  C23C16/4558 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244

摘要： A plasma processing apparatus includes a beam-shaped spacer 7 which is placed at an upper opening of a chamber 3 opposed to a substrate 2 to support a dielectric plate 8. The dielectric plate 8 is supported by the beam-shaped spacer 7. In the beam-shaped spacer 7 are provided a plurality of process gas introducing ports 31, 36 which have a depression angle θd and which are provided downward and directed toward the substrate 2, as well as a plurality of rare gas introducing ports 41 having a elevation angle θe directed toward the dielectric plate 8. Improvement of processing rates such as etching rate as well as effective suppression of wear of the dielectric plate 8 can be achieved.

摘要翻译： 等离子体处理装置包括一个放置在与衬底2相对的腔3的上部开口处以支撑电介质板8的梁形间隔件7.电介质板8由梁形间隔件7支撑。在 梁状间隔件7设置有多个处理气体导入口31,36，它们具有凹陷角度＆amp; t; d并且向下并且朝向基板2，以及多个稀有气体导入口41，其具有 俯仰角度; e朝向电介质板8.可以实现诸如蚀刻速率的处理速率的改善以及有效抑制电介质板8的磨损。

公开(公告)号：US4428124A

公开(公告)日：1984-01-31

申请号：US333617

申请日：1981-12-22

申请人： Hiromi Asakura

发明人： Hiromi Asakura

IPC分类号： B26B13/24 ,  B26B13/22

CPC分类号： B26B13/24

摘要： A hair cutting angle indicator for use with scissors or the like as an aid to cutting the hair at a desired angle with respect to the vertical. It includes an angle gauge mounted on an attachment removably mounted on the scissors. In one embodiment, the indicator holds the scissors at an adjustable desired distance from the head whose hair is being cut. In another embodiment, angular indicia are provided about a bar mounted to the handle of the scissors so as to indicate the angle of the cutting direction about the pivot axis of the scissors.

摘要翻译： 用于剪刀等的头发切割角度指示器，用于帮助以相对于垂直方向以期望的角度切割头发。 它包括安装在可移除地安装在剪刀上的附件上的角度计。 在一个实施例中，指示器将剪刀保持在与头发被切割的头部可调节的期望距离处。 在另一个实施例中，围绕安装在剪刀手柄上的杆提供角度标记，以指示围绕剪刀的枢转轴线的切割方向的角度。