-
公开(公告)号:US20140061031A1
公开(公告)日:2014-03-06
申请号:US13778555
申请日:2013-02-27
Applicant: IWATANI CORPORATION , KYOTO UNIVERSITY
Inventor: Yu YOSHINO , Kunihiko KOIKE , Takehiko SENOO , Jiro MATSUO , Toshio SEKI
IPC: C23F1/00
CPC classification number: C23F1/00 , B81C1/00531 , B81C2201/0132 , H01L21/02046 , H01L21/3065
Abstract: A processing method having excellent processing performance at a low flow rate is provided. A method for processing a surface of a sample uses reactive clusters produced by adiabatic expansion of a gas mixture ejected from a nozzle into a vacuum processing chamber. The gas mixture contains a reactive gas chlorine trifluoride, a first inert gas argon, and a second inert gas xenon. The gas mixture in an inlet of the nozzle has a pressure of 0.4 MPa (abs) or more. The reactive gas constitutes 3% by volume or more and 10% by volume or less. The first inert gas constitutes 40% by volume or more and 94% by volume or less. The second inert gas constitutes 3% by volume or more and 50% by volume or less of the gas mixture.
Abstract translation: 提供了一种在低流速下具有优异的加工性能的加工方法。 用于处理样品表面的方法使用通过从喷嘴喷射到真空处理室中的气体混合物的绝热膨胀产生的反应性簇。 气体混合物包含反应性气体三氟化氯,第一惰性气体氩气和第二惰性气体氙气。 喷嘴入口中的气体混合物的压力为0.4MPa(abs)以上。 反应气体占3体积%以上且10体积%以下。 第一惰性气体占40体积%以上且94体积%以下。 第二惰性气体构成气体混合物的3体积%以上且50体积%以下。
-
公开(公告)号:US12172198B2
公开(公告)日:2024-12-24
申请号:US17585274
申请日:2022-01-26
Applicant: TOKYO ELECTRON LIMITED , IWATANI CORPORATION
Inventor: Kazuya Dobashi , Takehiko Orii , Yukimasa Saito , Kunihiko Koike , Takehiko Senoo , Koichi Izumi , Yu Yoshino , Tadashi Shojo , Keita Kanehira
Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.
-
公开(公告)号:US20220143655A1
公开(公告)日:2022-05-12
申请号:US17585274
申请日:2022-01-26
Applicant: TOKYO ELECTRON LIMITED , IWATANI CORPORATION
Inventor: Kazuya DOBASHI , Takehiko ORII , Yukimasa SAITO , Kunihiko KOIKE , Takehiko SENOO , Koichi IZUMI , Yu YOSHINO , Tadashi SHOJO , Keita KANEHIRA
Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.
-
公开(公告)号:US11267021B2
公开(公告)日:2022-03-08
申请号:US16496714
申请日:2018-02-09
Applicant: TOKYO ELECTRON LIMITED , IWATANI CORPORATION
Inventor: Kazuya Dobashi , Takehiko Orii , Yukimasa Saito , Kunihiko Koike , Takehiko Senoo , Koichi Izumi , Yu Yoshino , Tadashi Shojo , Keita Kanehira
Abstract: There is provided a gas cluster processing device for performing a predetermined process on a workpiece by irradiating the workpiece with a gas cluster, including: a processing container in which the workpiece is disposed; a gas supply part configured to supply a gas for generating the gas cluster; a flow rate controller configured to control a flow rate of the gas supplied from the gas supply part; a cluster nozzle configured to receive the gas for generating the gas cluster at a predetermined supply pressure, spray the gas into the processing container maintained in a vacuum state, and convert the gas into the gas cluster through an adiabatic expansion; and a pressure control part provided in a pipe between the flow rate controller and the cluster nozzle and including a back pressure controller configured to control a supply pressure of the gas for generating the gas cluster.
-
公开(公告)号:US11123679B2
公开(公告)日:2021-09-21
申请号:US16092220
申请日:2017-03-03
Applicant: IWATANI CORPORATION
Inventor: Sadaki Nakamura , Koichi Izumi , Naohisa Makihira
IPC: B01D53/053 , C01B13/10
Abstract: Provided is a method for concentrating ozone gas, including the steps of: allowing ozone gas to be adsorbed onto an adsorbent in a first adsorption vessel; reducing pressure in a concentration vessel in a state where the concentration vessel does not communicate with the first adsorption vessel; discharging part of gas in the first adsorption vessel; introducing first concentrated mixed gas in the concentration vessel by desorbing ozone gas in the first concentrated mixed gas and delivering the desorbed ozone gas into the concentration vessel; allowing ozone gas to be adsorbed onto an adsorbent in a second adsorption vessel; and introducing second concentrated mixed gas into the concentration vessel in a state where the concentration vessel into which the first concentrated mixed gas is introduced and the second adsorption vessel that houses an adsorbent. Also provided is an apparatus for concentrating ozone gas for implementing the method.
-
公开(公告)号:US10597296B2
公开(公告)日:2020-03-24
申请号:US15761040
申请日:2016-06-29
Applicant: IWATANI CORPORATION
Inventor: Naohisa Makihira , Koichi Izumi , Masahiro Furutani
Abstract: A method for supplying an ozone gas includes the steps of: supplying an ozone gas from an ozone gas source through a second channel; and switching the ozone gas to a state where the ozone gas is supplied through a first channel and supplying the ozone gas having a reduced concentration of nitrogen oxide. The step of supplying the ozone gas through the second channel includes the step of introducing a part of the ozone gas to a first vessel so that ozone adsorbability of a first adsorbent is reduced. In the step of supplying the ozone gas to the object through the first channel, the ozone gas passes through the first vessel holding the first adsorbent having reduced ozone adsorbability.
-
公开(公告)号:US09638425B2
公开(公告)日:2017-05-02
申请号:US14260797
申请日:2014-04-24
Applicant: Iwatani Corporation , Asahi Seisakusho Co., Ltd.
Inventor: Kenichiro Inada , Akio Wada
CPC classification number: F24C3/12 , A47J37/0713 , A47J2037/0777
Abstract: A structure which performs safety operation with certainty when a gas container is replaced or when an abnormality occurs and is easy to used is provided. A cartridge-type gas grill 11 having a plurality of systems includes two gas container accommodation sections 12; two burners 13; and gas flow paths for connecting the gas container accommodation sections 12and the burners 13 in a one-to-one relationship. All the gas container accommodation sections 12 are each provided with a container attachment switch 19 for detecting that a gas container 15 is connected. Open/close valves 18, provided in the gas flow paths, for adjusting a gas flow are each formed of an electromagnetic valve. Operation knobs 63 each for making an operation on the corresponding open/close valve 18 are each provided with an ignition switch 20, which is turned ON when the corresponding open/close valve 18 is opened and is turned OFF when the corresponding open/close valve 18 is closed. The container attachment switches 19, the open/close valves 18, and the ignition switches 20 are electronically controlled. For an ignition process, the ignition switches are validated under the condition that all the container attachment switches 19 are ON. For a recovery process, all the ignition switches 19 need to be turned OFF.
-
公开(公告)号:US20150318170A1
公开(公告)日:2015-11-05
申请号:US14698273
申请日:2015-04-28
Applicant: TOKYO ELECTRON LIMITED , IWATANI CORPORATION
Inventor: Kazuo YABE , Akira SHIMIZU , Koichi IZUMI , Masahiro FURUTANI
IPC: H01L21/02
CPC classification number: H01L21/67017 , C23C16/402 , C23C16/45534 , H01L21/02164 , H01L21/022 , H01L21/02219 , H01L21/02236 , H01L21/0228
Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.
Abstract translation: 通过在真空气氛中层叠基板的表面上的氧化物的分子层来获得薄膜的成膜方法包括进行多次循环。 该循环包括:在真空容器中将含有源的源气体供应到衬底以将源吸附到衬底上; 形成含有浓度不低于在真空容器中引起链分解反应的臭氧的臭氧的臭氧气氛; 通过向臭氧气氛供给能量而强制分解臭氧,生成活性物质的氧,并且通过活性种氧化吸附在基材表面上的源,得到氧化物。
-
19.
公开(公告)号:US20230276789A1
公开(公告)日:2023-09-07
申请号:US17766430
申请日:2020-10-08
Applicant: IWATANI CORPORATION
Inventor: Yasuhiko Tabata , Koji Kimura
IPC: A01N1/02
CPC classification number: A01N1/0226 , A01N1/0221
Abstract: A cell freezing composition according to the present invention includes a medium, an antifreezing agent, and dissolved hydrogen.
-
公开(公告)号:US11542585B2
公开(公告)日:2023-01-03
申请号:US16652982
申请日:2018-07-27
Applicant: IWATANI CORPORATION
Inventor: Koichi Izumi , Masahiro Furutani , Tsuyoshi Yamamoto
IPC: C23C8/14
Abstract: A method for treating an inner wall surface of a treatment object uses a treatment object that is at least one of a container housing an ozone gas, a treatment container housing an object to be subjected to a surface treatment using an ozone gas and a pipe configured to supply an ozone gas. The method for treating an inner wall surface of a treatment object includes the steps of: determining whether an abnormal part is present in the inner wall surface of the treatment object or not; and distributing an ozone gas having a concentration of 10% by volume or more and 30% by volume or less and a temperature of 60° C. or less such that the ozone gas contacts the inner wall surface of the treatment object after the step of determining whether an abnormal part is present or not.
-
-
-
-
-
-
-
-
-