公开(公告)号：US20090263112A1

公开(公告)日：2009-10-22

申请号：US12421896

申请日：2009-04-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F26B3/30

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。 这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

公开(公告)号：US20080092929A1

公开(公告)日：2008-04-24

申请号：US11867916

申请日：2007-10-05

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： B08B3/02

CPC分类号： H01L21/67034 ,  H01L21/67051

摘要： A substrate processing apparatus includes a substrate holding unit for holding a substrate to be processed substantially horizontally, a process liquid nozzle for supplying a process liquid to a main surface of the substrate held by the substrate holding unit, a gas nozzle for supplying an inert gas to the main surface of the substrate held by the substrate holding unit, a gas nozzle moving unit for moving the gas nozzle along the main surface, and a control unit for carrying out a liquid film forming process for forming a liquid film of the process liquid on a whole area of the main surface of the substrate held by the substrate holding unit by supplying the process liquid from the process liquid nozzle to the main surface of the substrate, and a liquid film free region forming process for forming a liquid film free region from which the liquid film is removed away in a region of the main surface not including a center of the main surface by supplying an inert gas to the main surface on which the liquid film is formed, a liquid film free region moving process for moving the liquid film free region to locate the center of the main surface in the liquid film free region by moving the gas nozzle by means of the gas nozzle moving unit with supplying the inert gas from the gas nozzle to the main surface after the liquid film free region forming process, and a substrate drying process for removing the process liquid from the main surface by spreading the liquid film free region after the liquid film free region moving process to dry the substrate.

摘要翻译： 基板处理装置包括：基板保持单元，用于保持基本上水平的待处理基板;处理液喷嘴，用于将处理液供给到由基板保持单元保持的基板的主表面;气体喷嘴，用于供应惰性气体 到由基板保持单元保持的基板的主表面，用于沿着主表面移动气体喷嘴的气体喷嘴移动单元，以及用于进行用于形成处理液的液膜的液膜形成处理的控制单元 在由基板保持单元保持的基板的主表面的整个区域上，通过将处理液体从处理液喷嘴供给到基板的主表面，以及用于形成无液膜区域的无液膜区域形成工艺 通过向主表面供给惰性气体，在主表面的不包括主表面的中心的区域中将液膜除去 在其上形成有液膜的无液膜区域移动过程，用于通过气体喷嘴移动单元移动气体喷嘴以移动液膜自由区域以将主表面的中心定位在液膜自由区域中， 在无液膜形成工序之后，将来自气体喷嘴的惰性气体供给到主表面，以及通过在无液膜区域移动过程之后涂布液膜自由区域从主表面除去处理液的基板干燥工序 干燥基材。

公开(公告)号：US08859443B2

公开(公告)日：2014-10-14

申请号：US13366414

申请日：2012-02-06

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/00 ,  H01L21/687 ,  H01L21/677 ,  F27B17/00 ,  H01L21/67 ,  H01L21/324

CPC分类号： H01L21/324 ,  F27B17/0025 ,  H01L21/67115 ,  H01L21/67748 ,  H01L21/68742 ,  H01L21/68785

摘要： The first flash irradiation is performed on a semiconductor wafer preheated to 500° C. to heat a front surface of the semiconductor wafer. Thereafter, the second flash irradiation is performed to reheat the front surface of the semiconductor wafer before the temperature of the front surface of the semiconductor wafer becomes equal to the temperature of a back surface of the semiconductor wafer. Thus, the second flash irradiation is performed before the temperature of the front surface of the semiconductor wafer falls. Even if less energy is consumable by the second flash irradiation, the efficiency of heating of the front surface of the semiconductor wafer resulting from each iteration of the flash irradiation is improved.

摘要翻译： 在预热到500℃的半导体晶片上进行第一闪光照射，以加热半导体晶片的前表面。 此后，在半导体晶片的正面的温度变得等于半导体晶片的背面的温度之前，进行第​​二闪光照射，以对半导体晶片的前表面再加热。 因此，在半导体晶片的正面的温度下降之前进行第二闪光照射。 即使通过第二闪光照射消耗较少的能量，由于闪光照射的每次迭代而导致的半导体晶片的正面的加热效率提高。

公开(公告)号：US20140162467A1

公开(公告)日：2014-06-12

申请号：US14176262

申请日：2014-02-10

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/324

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

摘要翻译： 连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。 连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。 来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是 衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。 这实现了深结的激活，而不会引起基板翘曲或开裂。

公开(公告)号：US08592727B2

公开(公告)日：2013-11-26

申请号：US13298767

申请日：2011-11-17

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H01L21/26 ,  F27B5/14 ,  F27B5/18 ,  F27D11/02

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

摘要翻译： 连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。 连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。 来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯的峰值强度的闪光的叠加可以提高即使是 衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。 这实现了深结的激活，而不会引起基板翘曲或开裂。

公开(公告)号：US08355624B2

公开(公告)日：2013-01-15

申请号：US11832682

申请日：2007-08-02

申请人： Ippei Kobayashi ,  Yoshio Ito ,  Akio Wada ,  Kenichi Yokouchi

发明人： Ippei Kobayashi ,  Yoshio Ito ,  Akio Wada ,  Kenichi Yokouchi

IPC分类号： A21B2/00

CPC分类号： F27B17/0025 ,  H01L21/67115

摘要： A susceptor for holding a semiconductor wafer to be flash-heated by a flash of light emitted from flash lamps is formed of transparent quartz. The susceptor has a backside surface only which is roughened by shot blasting to provide a ground-glass-like surface. When a flash of light is emitted, part of the flash of light emitted from the flash lamps and passing by a peripheral portion of the semiconductor wafer held by the susceptor into the susceptor reaches the ground-glass-like backside surface and is diffusely reflected therefrom. Part of the diffusely reflected light impinges on the peripheral portion of the semiconductor wafer held by the susceptor to thereby heat the low temperature regions which have appeared in the peripheral portion of the semiconductor wafer.

摘要翻译： 用于保持由闪光灯发出的闪光闪光加热的半导体晶片的感受体由透明石英形成。 基座仅具有背面，通过喷丸粗糙化以提供磨玻璃状表面。 当发出闪光时，从闪光灯发出的闪光的一部分闪光并且被基座保持的半导体晶片的周边部分通过到基座中，到达玻璃状的后表面并且从其中漫反射 。 漫反射光的一部分照射在由基座保持的半导体晶片的周边部分上，从而加热出现在半导体晶片周边部分的低温区域。

公开(公告)号：US08145046B2

公开(公告)日：2012-03-27

申请号：US12421896

申请日：2009-04-10

申请人： Hiroki Kiyama ,  Kenichi Yokouchi

发明人： Hiroki Kiyama ,  Kenichi Yokouchi

IPC分类号： F26B3/30 ,  C33C16/00 ,  A21B1/00

CPC分类号： H01L21/67115

摘要： In light-irradiation heating with a total irradiation time of one second or less, two-stage irradiation is performed, including a first stage of light irradiation of a semiconductor wafer, which irradiation produces an output waveform that reaches a peak at a given emission output; and a second stage of supplemental light irradiation of the semiconductor wafer, which irradiation is started after the peak, producing an emission output smaller than the above given emission output. The emission output in the second stage is two thirds or less than the above given emission output at the peak. The first-stage light-irradiation time is between 0.1 and 10 milliseconds, and the second-stage light-irradiation time is 5 milliseconds or more. This allows the temperature of the semiconductor wafer even at a somewhat greater depth below the surface to be raised to some extent while allowing the surface temperature to be maintained at a generally constant processing temperature.

摘要翻译： 在总照射时间为1秒以下的光照射加热中，进行两级照射，包括半导体晶片的第一级光照射，该照射产生在给定发光输出处达到峰值的输出波形 ; 以及半导体晶片的补充光照射的第二阶段，其在峰值之后开始照射，产生小于上述给定发射输出的发射输出。 第二阶段的排放量是峰值的三分之二以上。 第一级光照射时间为0.1〜10毫秒，第二级光照射时间为5毫秒以上。 这允许半导体晶片的温度甚至在表面下方稍微更大的深度被提高到一定程度，同时允许表面温度保持在大致恒定的处理温度。

公开(公告)号：US20120063751A1

公开(公告)日：2012-03-15

申请号：US13298892

申请日：2011-11-17

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H05B33/02

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

公开(公告)号：US20120061374A1

公开(公告)日：2012-03-15

申请号：US13298767

申请日：2011-11-17

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： F27D11/00

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.

摘要翻译： 连接到短脉冲电路的闪光灯和连接到长脉冲电路的闪光灯交替排列成一行。 连接到长脉冲电路的闪光灯的发光持续时间长于连接到短脉冲电路的闪光灯的发光持续时间。 来自闪光灯的短时间闪光和来自闪光灯长时间发光的闪光灯具有高峰值强度的闪光的叠加可以增加即使是 衬底的深部分达到活化温度或更高，而不需要加热衬底表面附近的较浅部分。 这实现了深结的激活，而不会引起基板翘曲或开裂。

公开(公告)号：US20120057855A1

公开(公告)日：2012-03-08

申请号：US13298562

申请日：2011-11-17

申请人： Kenichi Yokouchi

发明人： Kenichi Yokouchi

IPC分类号： H05B33/02

CPC分类号： H01L21/324 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/02425 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/68785 ,  H01L21/68792

摘要： Flash lamps connected to short-pulse circuits and flash lamps connected to long-pulse circuits are alternately arranged in a line. The duration of light emission from the flash lamps connected to the long-pulse circuits is longer than the duration of light emission from the flash lamps connected to the short-pulse circuits. A superimposing of a flash of light with a high peak intensity from the flash lamps that emit light for a short time and a flash of light with a gentle peak from the flash lamps that emit light for a long time can increase the temperature of even a deep portion of a substrate to an activation temperature or more without heating a shallow portion near the substrate surface more than necessary. This achieves the activation of deep junctions without causing substrate warpage or cracking.