公开(公告)号：US20120106583A1

公开(公告)日：2012-05-03

申请号：US12917553

申请日：2010-11-02

申请人： Christopher Watson ,  Kirill Pimenov ,  Valery Tolstikhin ,  Fang Wu ,  Yury Logvin

发明人： Christopher Watson ,  Kirill Pimenov ,  Valery Tolstikhin ,  Fang Wu ,  Yury Logvin

IPC分类号： H01S5/22 ,  H01L33/58 ,  H01L21/302

CPC分类号： H01S5/2232 ,  H01S5/0208 ,  H01S5/0422 ,  H01S5/1231 ,  H01S5/2018 ,  H01S5/2081 ,  H01S5/22

摘要： A VCSEG-DFB laser, fully compatible with MGVI design and manufacturing methodologies, for single growth monolithic integration in multi-functional PICs is presented. It comprises a laser PIN structure, in mesa form, etched from upper emitter layer top surface through the active, presumably MQW, gain region, down to the top surface of the lower emitter. Lower electrical contacts sit adjacent the mesa disposed on the lower emitter layer with upper strip contacts disposed atop the upper emitter layer on the mesa top. An SEG is defined/etched from mesa top surface, between the upper strip contacts, through upper emitter layer down to or into the SCH layers. Vertical confinement is provided by the SCH structure and the lateral profile in the bottom portion of the mesa provides lateral confinement. The guided mode interacts with the SEG by the vertical tail penetrating the SEG and evanescent field coupling to the SEG.

摘要翻译： 提出了一种与MGVI设计和制造方法完全兼容的VCSEG-DFB激光器，用于多功能PIC中的单次增长单片集成。 它包括台面形式的激光PIN结构，从上部发射极层顶表面通过有源，大概是MQW，增益区域，到下部发射极的顶部表面蚀刻。 较低的电触头位于设置在下部发射极层上的台面附近，上部带状触点设置在台面顶部的上部发射极层顶部。 SEG由台面顶面，上部条状接触件之间，通过上部发射极层向下或向SCH层定义/蚀刻。 垂直限制由SCH结构提供，台面底部的侧向轮廓提供横向限制。 引导模式通过穿过SEG的垂直尾翼和耦合到SEG的渐逝场与SEG相互作用。

公开(公告)号：US08098969B2

公开(公告)日：2012-01-17

申请号：US12632933

申请日：2009-12-08

申请人： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

发明人： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

IPC分类号： G02B6/12

CPC分类号： H01S5/5018 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/0262 ,  H01S5/1014

摘要： The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

摘要翻译： 本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。 集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。 在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。 此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

公开(公告)号：US20110135314A1

公开(公告)日：2011-06-09

申请号：US12632933

申请日：2009-12-08

申请人： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

发明人： Valery Tolstikhin ,  Fang Wu ,  Christopher Watson ,  Yury Logvin ,  Kirill Pimenov

IPC分类号： H04B10/12

CPC分类号： H01S5/5018 ,  G02B2006/12121 ,  G02B2006/12123 ,  G02B2006/12195 ,  H01S5/0262 ,  H01S5/1014

摘要： The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration (MGVI) structure composed from III-V semiconductors and grown in one epitaxial growth run, allowing for the integration of semiconductor optical amplifier (SOA) and PIN photodetector (PIN) structures within a common wavelength-designated waveguide of the plurality of the vertically integrated wavelength-designated waveguides forming the MGVI structure. The integration includes a wavelength filter integrated between the SOA and PIN to reduce noise within the PIN arising from ASE generated by the SOA. In exemplary embodiments of the invention, the wavelength filter is integrated into MGVI structure either within a common wavelength designated waveguide or within the wavelength-designated waveguide. Further in other embodiments the wavelength filter is provided by a thin-film filter abutting a facet of the integrated-photonics arrangement wherein optical signals are coupled by optical waveguides and/or additional optical elements such as a multimode interference device.

摘要翻译： 本发明描述了一种集成光子学布置，其可以在由III-V半导体组成并在一个外延生长运行中生长的多导向垂直积分（MGVI）结构中实现，允许将半导体光放大器（SOA）和PIN光电检测器 PIN）结构，其构成了形成MGVI结构的多个垂直集成的波长指定波导的公共波长指定波导。 集成包括集成在SOA和PIN之间的波长滤波器，以减少由SOA产生的ASE产生的PIN内的噪声。 在本发明的示例性实施例中，波长滤波器在公共波长指定波导内或波长指定波导内集成到MGVI结构中。 此外，在其它实施例中，波长滤波器由抵靠集成光子学装置的小平面的薄膜滤光器提供，其中光信号通过光波导耦合，和/或诸如多模干涉装置的附加光学元件耦合。

公开(公告)号：US07609931B2

公开(公告)日：2009-10-27

申请号：US11473242

申请日：2006-06-23

申请人： Yury Logvin ,  Serge Grabtchak ,  Kirill Pimenov

发明人： Yury Logvin ,  Serge Grabtchak ,  Kirill Pimenov

IPC分类号： G02B6/10

CPC分类号： G02B6/125 ,  G02B2006/12097

摘要： Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.

摘要翻译： 描述了脊和掩埋波导结构，其特征在于设置在波导附近的多个沟槽，以便增强在波导内传播的光信号的约束。 另外，其中特征在于沟槽和波导之间的距离的绝热过渡区域。

公开(公告)号：US07539373B1

公开(公告)日：2009-05-26

申请号：US11984922

申请日：2007-11-26

申请人： Yury Logvin ,  Fang Wu ,  Kirill Pimenov ,  Valery Tolstikhin

发明人： Yury Logvin ,  Fang Wu ,  Kirill Pimenov ,  Valery Tolstikhin

IPC分类号： G02B6/26

CPC分类号： G02B6/12004 ,  G02B6/131 ,  G02B6/14

摘要： The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.