摘要:
The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination. In the exemplary embodiment of the invention, this enhanced efficiency technique is applied to the design of a single-mode LC-DFB laser suitable for a monolithic integration with other active and passive functional elements of photonic integrated circuits fabricated by using one-step epitaxial growth.
摘要:
The present invention relates to a method for determining a polarization dependent characteristic of an optical or opto-electronic device. Using the Mueller matrix data, a matrix M corresponding to a difference between a first and a second transmission spectrum is determined. The first and the second transmission spectrum correspond to a first Stokes vector and a second Stokes vector, respectively, with the second Stokes vector being opposite to the first Stokes vector. Eigenvalues of the matrix M are then determined and the first Stokes vector is determined by selecting the largest eigenvalue of the matrix M and determining a corresponding eigenvector. The second Stokes vector is then determined as a vector opposite to the first Stokes vector. Finally, the data indicative of the polarization dependent characteristic of the device are determined using the first and the second Stokes vector and the Mueller matrix data. This method is highly beneficial by providing highly accurate data related to polarization dependent parameters while simultaneously providing a nearly instantaneous result with minimum computational effort.
摘要:
The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide. In the exemplary embodiments of the invention, two active wavelength-designated waveguides, each of which either laser or photodetector, are vertically integrated with a common passive waveguide connected to the input/output optical port shared by both operating wavelengths, to form a single-fiber, two-wavelength receiver (both wavelength-designated waveguides are waveguide photodetectors) or transmitter (both wavelength-designated waveguides are edge-emitting semiconductor injection lasers) or transceiver (one wavelength-designated waveguide is waveguide photodetector and the other—edge-emitting semiconductor injection laser). Advantageously to the previous art, the proposed vertical splitting and lateral routing allows for a reduced footprint size while greatly improving design flexibility and/or device performance.
摘要:
The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other. The invention discloses the designs of the multiple effective ridge laterally coupled surface-etched grating waveguide structures, which enhances the coupling efficiency as compared to a conventional single effective ridge grating design because of an intended dilution of the lateral confinement caused by the multiple effective ridges, resulting in an increase of the optical mode's overlap with the surface etched grating formed everywhere outside the effective ridges.
摘要:
Ridge and buried waveguide structures feature a plurality of trenches disposed proximate the waveguides in order to enhance confinement of an optical signal propagating within the waveguide are described. Additionally, an adiabatic transition region where the distance between trenches and waveguide is featured.
摘要:
The invention describes the method and apparatus for enhancement of coupling efficiency in effective-ridge laterally-coupled surface-etched grating waveguide structures, where a slab waveguide has a sequence of the periodic parallel segmented trenches etched from its top surface, such that the segments of intact material having higher refractive index than that in the surrounding segments of periodic trenches form the effective ridges which confine the optical field in and around these ridges, on one hand, and provide bidirectional coupling for the confined modes experiencing Bragg reflection from the segments of the periodic trenches, on the other. The invention discloses the designs of the multiple effective ridge laterally coupled surface-etched grating waveguide structures, which enhances the coupling efficiency as compared to a conventional single effective ridge grating design because of an intended dilution of the lateral confinement caused by the multiple effective ridges, resulting in an increase of the optical mode's overlap with the surface etched grating formed everywhere outside the effective ridges.
摘要:
The invention describes method and apparatus for a mode converter enabling an adiabatic transfer of a higher order mode into a lower order optical mode within a photonic integrated circuit exploiting integrated semiconductor ridge waveguide techniques. As disclosed by the invention, such a mode conversion is achievable by using an asymmetric coupler methodology. In an exemplary embodiment of the invention, the invention is used to provide a low insertion loss optical connection between laterally-coupled DFB laser operating in first order mode and passive waveguide operating in the zero order optical mode. The integrated arrangement fabricated by using one-step epitaxial growth allows for a launch of the laser's light into the waveguide circuitry operating in the zero order lateral mode or efficiently coupling it to single-mode fiber, an otherwise high loss interface due to the difference in laser and optical fiber modes.
摘要:
The invention describes the method and apparatus for enhanced efficiency in a laterally-coupled distributed feedback (LC-DFB) laser. In a device featuring the effective ridge design, lateral confinement of the guided optical modes is provided by a surface etched grating, which also serves as a DFB element of the laser. Coupling and quantum efficiency of such a LC-DFB laser both improve with an increase of the lateral mode order. In accordance with this invention, a dramatic enhancement of the laser efficiency is achievable by designing it to operate in one of the higher order modes, notably the first order mode, while all the other lateral modes, including the zero order mode, are suppressed through gain-loss discrimination. In the exemplary embodiment of the invention, this enhanced efficiency technique is applied to the design of a single-mode LC-DFB laser suitable for a monolithic integration with other active and passive functional elements of photonic integrated circuits fabricated by using one-step epitaxial growth.
摘要:
The invention describes an integrated-photonics arrangement, implementable in a multi-guide vertical integration structure composed from III-V semiconductors and grown in one epitaxial growth run, that allows for vertical and lateral splitting of optical signals co- or bi-directionally propagating in the common passive waveguide into plurality of the vertically integrated passive or active wavelength-designated waveguides, therefore, enabling the wavelength-designated waveguides operating in different wavelengths to be monolithically integrated onto the same substrate and connected to the shared passive waveguide. In the exemplary embodiments of the invention, two active wavelength-designated waveguides, each of which either laser or photodetector, are vertically integrated with a common passive waveguide connected to the input/output optical port shared by both operating wavelengths, to form a single-fiber, two-wavelength receiver (both wavelength-designated waveguides are waveguide photodetectors) or transmitter (both wavelength-designated waveguides are edge-emitting semiconductor injection lasers) or transceiver (one wavelength-designated waveguide is waveguide photodetector and the other—edge-emitting semiconductor injection laser). Advantageously to the previous art, the proposed vertical splitting and lateral routing allows for a reduced footprint size while greatly improving design flexibility and/or device performance.
摘要:
The present invention relates to a method for determining a polarization dependent characteristic of an optical or opto-electronic device. Using the Mueller matrix data, a matrix M corresponding to a difference between a first and a second transmission spectrum is determined. The first and the second transmission spectrum correspond to a first Stokes vector and a second Stokes vector, respectively, with the second Stokes vector being opposite to the first Stokes vector. Eigenvalues of the matrix M are then determined and the first Stokes vector is determined by selecting the largest eigenvalue of the matrix M and determining a corresponding eigenvector. The second Stokes vector is then determined as a vector opposite to the first Stokes vector. Finally, the data indicative of the polarization dependent characteristic of the device are determined using the first and the second Stokes vector and the Mueller matrix data. This method is highly beneficial by providing highly accurate data related to polarization dependent parameters while simultaneously providing a nearly instantaneous result with minimum computational effort.