公开(公告)号：US20240332907A1

公开(公告)日：2024-10-03

申请号：US18127983

申请日：2023-03-29

Applicant: Tin Komljenovic ,  Zeyu Zhang ,  Chong Zhang ,  Minh Tran

Inventor： Tin Komljenovic ,  Zeyu Zhang ,  Chong Zhang ,  Minh Tran

IPC: H01S5/22 ,  H01S5/06 ,  H01S5/10

CPC classification number: H01S5/2228 ,  H01S5/0612 ,  H01S5/1014

Abstract: A device is made up of an active structure attached to a substrate, the active structure having a facet through which light couples between the active structure and another structure attached to the substrate; and an active region comprising a quantum well region that includes a sub-region, adjacent the facet, configured to undergo QWI in response to heat. The active structure also contains a heating element, positioned close to the facet and operable such that heat generated by the heating element raises a temperature of the sub-region of the active region near the facet high enough to activate QWI in that sub-region, in turn causing a reduction in optical absorption, without raising temperatures in any other portion of the active region enough to cause significant thermal stress at any interface between the substrate and the active structure.

公开(公告)号：US12051884B2

公开(公告)日：2024-07-30

申请号：US17045003

申请日：2019-03-28

Applicant: Nippon Telegraph and Telephone Corporation

Inventor： Takuma Aihara ,  Shinji Matsuo ,  Tai Tsuchizawa ,  Takaaki Kakitsuka ,  Tatsurou Hiraki

IPC: H01S5/10 ,  H01S5/02 ,  H01S5/026 ,  H01S5/14

CPC classification number: H01S5/1014 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/142

Abstract: A wavelength tunable laser formed on a substrate made of single-crystal silicon is provided. The wavelength tunable laser includes a light emitting portion made of a III-V compound semiconductor, and external resonators provided with an optical filter. Cores included in the external resonators are made of one of SiN, SiON, and SiOn (n is smaller than 2).

公开(公告)号：US12046871B2

公开(公告)日：2024-07-23

申请号：US18073458

申请日：2022-12-01

Applicant: Quintessent Inc.

Inventor： Brian Koch ,  Michael Davenport ,  Alan Liu ,  Justin Colby Norman

IPC: G02B6/12 ,  G02B6/122 ,  H01S5/10 ,  H01S5/20 ,  H01S5/34

CPC classification number: H01S5/1014 ,  H01S5/209 ,  H01S5/34 ,  G02B6/12004 ,  G02B6/1228

Abstract: Integrated-optics systems are presented in which an optically active device is optically coupled with a silicon waveguide via a passive compound-semiconductor waveguide. In a first region, the passive waveguide and the optically active device collectively define a composite waveguide structure, where the optically active device functions as the central ridge portion of a rib-waveguide structure. The optically active device is configured to control the vertical position of an optical mode in the composite waveguide along its length such that the optical mode is optically coupled into the passive waveguide with low loss. The passive waveguide and the silicon waveguide collectively define a vertical coupler in a second region, where the passive and silicon waveguides are configured to control the distribution of the optical mode along the length of the coupler, thereby enabling the entire mode to transition between the passive and silicon waveguides with low loss.

公开(公告)号：US12038511B2

公开(公告)日：2024-07-16

申请号：US17505640

申请日：2021-10-20

Applicant: Intel Corporation

Inventor： Naresh Satyan ,  George Rakuljic

IPC: G01C3/08 ,  G01S7/481 ,  G01S7/4911 ,  G01S7/4914 ,  G01S7/4915 ,  G01S7/497 ,  G01S17/34 ,  G01S17/42 ,  G01S17/89 ,  G02F1/21 ,  H01S5/026 ,  H01S5/10 ,  H01S5/00 ,  H01S5/12 ,  H01S5/50

CPC classification number: G01S17/89 ,  G01S7/4812 ,  G01S7/4817 ,  G01S7/4911 ,  G01S7/4914 ,  G01S7/4915 ,  G01S7/497 ,  G01S17/34 ,  G01S17/42 ,  G02F1/21 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/1014 ,  G01S7/4818 ,  G02F1/212 ,  H01S5/0064 ,  H01S5/1212 ,  H01S5/5027

Abstract: A light detection and ranging (LIDAR) system may include a laser source configured to emit one or more optical beams; a scanning optical system configured to scan the one or more optical beams over a scene and capture reflections of the one or more optical beams from the scene; a measurement system configured to divide the scene into a plurality of pixels, the measurement system comprising a detector configured to detect a return signal from multiple pixels of the plurality of pixels as the one or more optical beams are scanned across the scene, and a data processor configured to perform data processing from the return signal from the multiple pixels to determine a range and/or range rate for each pixel of the scene.

公开(公告)号：US11971577B2

公开(公告)日：2024-04-30

申请号：US17838325

申请日：2022-06-13

Applicant: Minh Tran ,  Tin Komljenovic

Inventor： Minh Tran ,  Tin Komljenovic

IPC: G02B6/122 ,  G02B6/12 ,  G02B6/30 ,  H01S5/026 ,  H01S5/10

CPC classification number: G02B6/1228 ,  G02B6/305 ,  H01S5/026 ,  H01S5/1014 ,  G02B2006/12061 ,  G02B2006/12121

Abstract: A device comprises first, second and third elements fabricated on a common substrate. The first element comprises an active waveguide structure comprising: a first portion supporting a first optical mode. The second element comprises a passive waveguide structure supporting a second optical mode. The third element, at least partly butt-coupled to the second portion, comprises an intermediate waveguide structure supporting intermediate optical modes. At least part of the second element is non-linear, supporting frequency conversion. A tapered waveguide structure in at least one of the second and third elements facilitates efficient adiabatic transformation between the first optical mode and one intermediate optical mode. No adiabatic transformation occurs between any intermediate optical mode and the first optical mode. Mutual alignments of the elements are defined using lithographic alignment marks.

公开(公告)号：US11966078B2

公开(公告)日：2024-04-23

申请号：US17312335

申请日：2019-12-09

Applicant: ROCKLEY PHOTONICS LIMITED

Inventor： Guomin Yu

IPC: G02B6/122 ,  G02B6/14 ,  H01S5/026 ,  H01S5/10

CPC classification number: G02B6/1228 ,  G02B6/14 ,  H01S5/026 ,  H01S5/1014

Abstract: A method of manufacturing an optoelectronic device including a mode converter. The method has the steps of: on a first silicon-on-insulator (SOI) wafer, manufacturing the optoelectronic device; and either: on a second SOI wafer, manufacturing a mode converter; and bonding the mode converter to the first SOI wafer; or bonding a second SOI wafer to the first SOI wafer to form a combined wafer; and etching a mode converter into the combined wafer.

公开(公告)号：US11894660B2

公开(公告)日：2024-02-06

申请号：US17304269

申请日：2021-06-17

Applicant: UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Arkadiy Lyakh

IPC: H01S5/34 ,  H01S5/10 ,  H01S5/22

CPC classification number: H01S5/3402 ,  H01S5/1007 ,  H01S5/1014 ,  H01S5/1082 ,  H01S5/22

Abstract: A QCL may include a substrate, and a semiconductor layer adjacent the substrate. The semiconductor layer may define branch active regions, and a stem region coupled to output ends of the branch active regions. Each branch active region may have a number of stages less than 30.

公开(公告)号：US20230268716A1

公开(公告)日：2023-08-24

申请号：US18017608

申请日：2021-07-22

Applicant: National Research Council of Canada

Inventor： Grzegorz PAKULSKI ,  Mohamed RAHIM ,  Michel MORIN ,  Simon AYOTTE ,  Keven BÉDARD ,  Muhammad MOHSIN

IPC: H01S5/068 ,  H01S5/125 ,  H01S5/227 ,  H01S5/042 ,  H01S5/22 ,  H01S5/10 ,  H01S5/0625

CPC classification number: H01S5/06817 ,  H01S5/125 ,  H01S5/227 ,  H01S5/0425 ,  H01S5/2223 ,  H01S5/1014 ,  H01S5/06255 ,  H01S5/101 ,  H01S2301/02

Abstract: A laser comprising a narrow linewidth, comprising: a grating along a laser cavity; a laser waveguide having a plurality of waveguide sections corresponding to a plurality of grating sections, each of the plurality of waveguide sections having a ridge/mesa width for detuning the grating in each of the plurality of grating sections; and a plurality of contact electrodes contacting each of the plurality of waveguide sections, the plurality of contact electrodes for applying a different current to each of the plurality of waveguide sections to enable active feedback noise suppression.

公开(公告)号：US20230253762A1

公开(公告)日：2023-08-10

申请号：US18156641

申请日：2023-01-19

Applicant: FURUKAWA ELECTRIC CO., LTD.

Inventor： Masaki WAKABA

IPC: H01S5/227 ,  H01S5/343 ,  H01S5/10 ,  H01S5/22

CPC classification number: H01S5/227 ,  H01S5/3434 ,  H01S5/1014 ,  H01S5/2206 ,  H01S5/34373

Abstract: A semiconductor laser device includes: a main body including a first layer having n-type conductivity, a second layer having p-type conductivity, and an active layer interposed between the first layer and the second layer, the first layer, the second layer, and the active layer being laminated in a lamination direction; a front-side mirror formed on a front facet of the main body, the front facet being parallel to the lamination direction; and a rear-side mirror formed on a rear facet of the main body, the rear facet facing the front facet in an optical waveguide direction that crosses the lamination direction and the front facet. The first layer includes an electric field control layer having a shorter composition wavelength than an emission wavelength of the active layer. The second layer includes an optical guide layer having a shorter composition wavelength than the emission wavelength of the active layer.

公开(公告)号：US11670908B2

公开(公告)日：2023-06-06

申请号：US17081130

申请日：2020-10-27

Applicant: POET Technologies, Inc.

Inventor： Suresh Venkatesan

IPC: H01S5/10 ,  H01S5/026 ,  G02B6/42 ,  H01S5/22 ,  H01S5/34

CPC classification number: H01S5/1014 ,  G02B6/4201 ,  H01S5/026 ,  H01S5/22 ,  H01S5/34

Abstract: The invention described herein pertains to the structure and formation of an optical device that includes a planar laser and a waveguide. The planar laser has a large lateral QW-containing layer and a tapered section in a transition portion of the device structure that enable low diode leakage currents and facilitate transition of the optical signal from the laser to a transition waveguide, and in some embodiments, to a dilute waveguide.