Abstract:
A bottom-gate thin film transistor includes a gate electrode, a gate insulating layer and a microcrystalline silicon layer. The gate electrode is disposed on a substrate. The gate insulating layer is made up of silicon nitride and disposed on the gate electrode and the substrate. The microcrystalline silicon layer is disposed on the gate insulating layer and corresponds to the gate electrode, in which a contact interface between the gate insulating layer and the microcrystalline silicon layer has a plurality of oxygen atoms, and concentration of the oxygen atoms ranges between 1020 atoms/cm3 and 1025 atoms/cm3. A method of fabricating a bottom-gate thin film transistor is also disclosed herein.
Abstract:
The energy content of supercapacitor is determined by its capacitance value and working voltage. To attain a high capacitance and a high voltage, several pieces of electrodes and separators are spirally wound with edge sealing to form a bipolar supercapacitor in cylindrical, oval or square configuration. While the winding operation effectively provides a large surface area for high capacitance, the bipolar packaging instantly imparts a unitary roll a minimum working voltage of 5V on using an organic electrolyte. The bipolar roll is a powerful building block for facilitating the assembly of supercapacitor modules. Using containers with multiple compartments, as many bipolar rolls can be connected in series, in parallel or in a combination of the two connections to fabricate integrated supercapacitors with high energy density as required by applications.