Abstract:
The present invention provides a novel crystalline material Si.sub.x C.sub.y N.sub.z possessing a direct optical band gap of 3.8 eV. Many optoelectronic applications, such as blue light emitting diode and laser diode, may utilize this property.
Abstract:
The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
Abstract:
A single step method of forming a composite of ductile niobium particles within a matrix of brittle niobium aluminum is taught. The method involves completely ablating the end of a rod of a niobium aluminum intermetallic with a laser beam to form a plume of vaporous and particulate material and depositing the ablated material on a receiving surface disposed proximate the rod end being ablated. A surface composite structure is formed in a single step and has ductile particles within a brittle matrix.