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公开(公告)号：US20130328018A1
公开(公告)日：2013-12-12
申请号：US13494888
申请日：2012-06-12
Applicant: Kuei-Hsien Chen , Hsieh-Cheng Han , Ching-Chun Chang , Li-Chyong Chen , Chan-Yi Du
Inventor： Kuei-Hsien Chen , Hsieh-Cheng Han , Ching-Chun Chang , Li-Chyong Chen , Chan-Yi Du
CPC classification number: H01L51/424 , H01L51/0036 , H01L51/0043 , H01L51/0046 , H01L51/0047 , H01L51/005 , H01L51/0055 , H01L51/4246 , H01L51/44 , Y02E10/549 , Y02P70/521
Abstract: The present invention is related to a process for reducing surface energy of a hole transport layer. The disclosed process comprises providing a hole transport layer; and providing a fluorine-containing layer directly on said hole transport layer. The configuration of said fluorine-containing layer reduces the structural disorder of an active layer and is able to recover a moisture-degraded hole transport layer, and thereby improves the performance of an electric device containing the same.
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公开(公告)号：US5320882A
公开(公告)日：1994-06-14
申请号：US872231
申请日：1992-04-22
Applicant: Li-Chyong Chen
Inventor： Li-Chyong Chen
Abstract: A single step method of forming a composite of ductile niobium particles within a matrix of brittle niobium aluminum is taught. The method involves completely ablating the end of a rod of a niobium aluminum intermetallic with a laser beam to form a plume of vaporous and particulate material and depositing the ablated material on a receiving surface disposed proximate the rod end being ablated. A surface composite structure is formed in a single step and has ductile particles within a brittle matrix.
Abstract translation: 教导了在脆性铌铝基体内形成延性铌颗粒复合材料的单步法。 该方法包括用激光束完全烧蚀铌铝金属间化合物的杆的端部，以形成蒸气和颗粒材料的羽流，并将烧蚀的材料沉积在接近被烧蚀的杆端设置的接收表面上。 表面复合结构在单一步骤中形成并且在脆性基质内具有延性颗粒。
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公开(公告)号：US08080824B2
公开(公告)日：2011-12-20
申请号：US11560157
申请日：2006-11-15
Applicant: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
Inventor： Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
IPC: H01L29/00
CPC classification number: H01L31/0352 , H01L31/18
Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
Abstract translation: 半导体材料结构包括至少一个能够产生电子和空穴的区域，每个区域在操作期间具有相关联的平均动能。 靠近该区域的材料层提供大于与产生的电子相关联的平均动能和与孔相关联的平均动能的相关势能。
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公开(公告)号：US20080110499A1
公开(公告)日：2008-05-15
申请号：US11560157
申请日：2006-11-15
Applicant: Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
Inventor： Kuei-Hsien Chen , Chien-Hung Lin , Chia-Wen Hsu , Li-Chyong Chen
IPC: H01L31/0256 , H01L31/18 , H01L31/0352
CPC classification number: H01L31/0352 , H01L31/18
Abstract: A semiconductor material structure includes at least one region capable of generating electrons and holes each having an associated mean kinetic energy during operation. A material layer in proximity to the region provides an associated potential energy larger than the mean kinetic energy associated with the generated electrons and the mean kinetic energy associated with the holes.
Abstract translation: 半导体材料结构包括至少一个能够产生电子和空穴的区域，每个区域在操作期间具有相关联的平均动能。 靠近该区域的材料层提供大于与产生的电子相关联的平均动能和与孔相关联的平均动能的相关势能。
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公开(公告)号：US6090358A
公开(公告)日：2000-07-18
申请号：US915173
申请日：1997-08-20
Applicant: Li-Chyong Chen , Kuei-Hsien Chen , Dhananjay Manohar Bhusari , Chun-Ku Chen
Inventor： Li-Chyong Chen , Kuei-Hsien Chen , Dhananjay Manohar Bhusari , Chun-Ku Chen
IPC: C01B21/082 , C23C16/36 , C01B33/00
CPC classification number: C01B21/0828 , C23C16/36 , C01P2002/72 , C01P2002/82 , C01P2004/61
Abstract: A novel material Si.sub.X C.sub.y N.sub.z, having a crystal structure similar to that of a.Si.sub.3 N.sub.4 with carbon atoms substituting most of the Si sites, is synthesized in crystalline form onto crystalline Si substrates by microwave plasma enhanced decomposition of carbon, silicon and nitrogen containing gasses.
Abstract translation: 具有类似于具有碳原子取代大部分Si位点的Si 3 N 4的晶体结构的新型材料SiXCyNz通过碳，硅和含氮气体的微波等离子体增强分解以晶体形式合成在晶体Si衬底上。
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Patent Agency Ranking
6.发明申请METHOD FOR MODIFYING SURFACE OF POWDER AND COMPOSITE CONTAINING SURFACE-MODIFIED POWDER 审中-公开粉末和复合材料表面改性粉末表面改性方法公开(公告)号：US20140203217A1
公开(公告)日：2014-07-24
申请号：US13945773
申请日：2013-07-18
Applicant: Bing Joe Hwang , Li-Chyong Chen , Kuei-Hsien Chen , Deniz Po Wong , Han-Ping Tseng
Inventor： Bing Joe Hwang , Li-Chyong Chen , Kuei-Hsien Chen , Deniz Po Wong , Han-Ping Tseng
IPC: H01M4/36
Abstract: A method for modifying a surface of a powder is provided. The method includes steps of providing a polar aprotic solvent; and mixing the polar aprotic solvent with the powder so that the polar aprotic solvent adheres to the surface of the powder.
Abstract translation: 提供了改变粉末表面的方法。 该方法包括提供极性非质子溶剂的步骤; 并将极性非质子溶剂与粉末混合，使极性非质子溶剂粘附到粉末表面。
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7.发明申请Functionalized Nitride Nanomaterials for Electrochemistry and Biosensor Applications 有权用于电化学和生物传感器应用的功能化氮化物纳米材料公开(公告)号：US20100279434A1
公开(公告)日：2010-11-04
申请号：US12030621
申请日：2008-02-13
Applicant: Kuei-Hsien Chen , Chin-Pei Chen , Abhitjit Ganguly , Li-Chyong Chen , Ying-Chin Chang
Inventor： Kuei-Hsien Chen , Chin-Pei Chen , Abhitjit Ganguly , Li-Chyong Chen , Ying-Chin Chang
IPC: H01L21/02
CPC classification number: B82Y15/00 , G01N27/3278
Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
Abstract translation: 本发明涉及氮化物纳米材料的表面改性/功能化和基于这种官能化氮化物材料的电化学和光学测量。 利用本发明，可以将各种生物分子如DNA，蛋白质和抗原固定在表面上用于测量以实现超敏感的化学和生物感测应用。
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公开(公告)号：US5284614A
公开(公告)日：1994-02-08
申请号：US891116
申请日：1992-06-01
Applicant: Li-Chyong Chen , Stephen L. Dole , Ronald H. Arendt
Inventor： Li-Chyong Chen , Stephen L. Dole , Ronald H. Arendt
CPC classification number: C22C32/0031 , C22C1/1026
Abstract: Doped tungsten powder, or sintered tungsten bodies formed therefrom, having a fine dispersion of oxide particles of at least one metal from the group zirconium, hafnium, lanthanum, yttrium, and rare earth's are formed by the method of this invention. A mixture of a salt solution comprised of a soluble salt of the metal, and a tungsten blue oxide powder is formed. A hydroxide precipitating solution is admixed with the mixture to form a hydroxide precipitate of the metal on the tungsten blue oxide powder. The tungsten blue oxide powder and hydroxide precipitate are heated in a reducing atmosphere to form the tungsten powder having the dispersion of oxide particles. The doped tungsten powder can be consolidated and sintered to form tungsten bodies having a fine dispersion of the metal oxide.
Abstract translation: 通过本发明的方法形成具有由锆，铪，镧，钇和稀土族组成的至少一种金属的氧化物颗粒的细分散体的由其形成的掺杂钨粉末或烧结钨体。 形成由金属的可溶性盐构成的盐溶液和蓝色氧化钨粉末的混合物。 将氢氧化物沉淀溶液与混合物混合以在钨蓝色氧化物粉末上形成金属的氢氧化物沉淀物。 将钨蓝色氧化物粉末和氢氧化物沉淀物在还原气氛中加热以形成具有氧化物颗粒分散体的钨粉末。 掺杂的钨粉可以被固结和烧结以形成具有金属氧化物的细分散体的钨体。
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9.发明授权Functionalized nitride nanomaterials for electrochemistry and biosensor applications 有权用于电化学和生物传感器应用的功能化氮化物纳米材料公开(公告)号：US08093069B2
公开(公告)日：2012-01-10
申请号：US12030621
申请日：2008-02-13
Applicant: Kuei-Hsien Chen , Chin-Pei Chen , Abhijit Ganguly , Li-Chyong Chen , Ying-Chin Chang
Inventor： Kuei-Hsien Chen , Chin-Pei Chen , Abhijit Ganguly , Li-Chyong Chen , Ying-Chin Chang
IPC: H01L21/00
CPC classification number: B82Y15/00 , G01N27/3278
Abstract: This invention refers to surface modification/functionalization of Nitride nanomaterials and electrochemistry and optical measurement based upon such functionalized Nitride materials. With this invention a variety of bio-molecules such as DNA, protein, and antigens can be immobilized on the surface for measurement to realize ultra-sensitive chemical- and bio-sensing applications.
Abstract translation: 本发明涉及氮化物纳米材料的表面改性/功能化和基于这种官能化氮化物材料的电化学和光学测量。 利用本发明，可以将各种生物分子如DNA，蛋白质和抗原固定在表面上用于测量以实现超敏感的化学和生物感测应用。
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10.发明授权Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions 失效通过在衬底的部分上形成掩模并蚀刻未屏蔽部分在衬底中形成纳米尖端阵列的方法公开(公告)号：US06960528B2
公开(公告)日：2005-11-01
申请号：US10247886
申请日：2002-09-20
Applicant: Kuie-Hsien Chen , Jih Shang Hwang , Debajyoti Das , Hong Chun Lo , Li-Chyong Chen
Inventor： Kuie-Hsien Chen , Jih Shang Hwang , Debajyoti Das , Hong Chun Lo , Li-Chyong Chen
IPC: C30B29/60 , H01J9/02 , H01L21/3065 , H01L21/308 , H01L31/0352 , H01L21/461
CPC classification number: B82Y30/00 , C30B29/605 , H01J9/025 , H01J2209/0223 , H01L21/3065 , H01L21/3085 , H01L31/0352
Abstract: Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocrystallites on the surface of the substrate, thereby masking portions of the substrate from other components of the process gas mixture, which etch exposed portions of the substrate. Accordingly, nanotip arrays formed using this technique can have nanocrytallite endpoints.
Abstract translation: 通过将衬底暴露于同时在衬底表面上形成纳米掩模的工艺气体混合物并蚀刻衬底表面的暴露部分以形成纳米尖端阵列而形成纳米管阵列。 工艺气体混合物的组分在衬底的表面上形成纳米晶体，从而将衬底的部分从处理气体混合物的其它组分掩蔽，其蚀刻衬底的暴露部分。 因此，使用这种技术形成的纳米尖端阵列可以具有纳米铁质体终点。
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