Abstract:
An improved method, system, and computer program product is disclosed for predicting the geometric model of transistors once manufacturing and lithographic process effects are taken into consideration. This provides a much more accurate approach for modeling transistors since it is the actual expected geometric shapes that are analyzed, rather than an idealized model of the layout that does not accurately correspond to the actual manufactured IC product. The expected geometric shape includes systematic variations, which can be determined based on the layout, and the expected random variations, which can be determined based on the lithographic process.
Abstract:
An improved method, system, and computer program product is disclosed for increased accuracy for extraction of electrical parameters of an IC design. Extraction is performed upon the expected geometric model of the printed layout once manufacturing and lithographic process effects are taken into consideration. This provides a much more accurate approach for performing extraction since it is the actual expected geometric shapes that are analyzed, rather than an idealized model of the layout that does not accurately correspond to the actual manufactured IC product. The extracted electrical parameters are checked for acceptability. If not acceptable, then the IC design can be modified to address any identified problems or desired improvements to the design.
Abstract:
A method for modifying an upper layout for an upper layer of an IC using information of a lower layout for a lower layer of the IC, the method including 1) receiving the upper layout containing features and modifications to features, 2) producing a density map of the lower layout having geometry coverages of sub-regions of the lower layout, 4) selecting a feature in the upper layout, 5) retrieving, from the density map, the geometry coverage of a sub-region below the feature, 6) determining a vertical deviation of the feature using the geometry coverage, 7) determining an alteration to the modification using the vertical deviation, 8) applying the alteration to the modification, and 9) repeating for all features. In some embodiments, the upper layout is designed using a library of pretabulated models, each model containing a modification to a feature calculated to produce a satisfactory feature on a wafer.
Abstract:
A method for generating lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to write a mask.