Abstract:
A method for modifying an IC layout using a library of pretabulated models, each model containing an environment with a feature, one or more geometries, and a modification to the feature that us calculated to produce a satisfactory feature on a wafer. The model may also contain a simulation of the environment reflecting no processing variations and/or a re-simulation of the environment reflecting one or more processing variations. The model may also contain data describing an electrical characteristic of the environment as a function of one or more process variations and/or describing an adjustment equation that uses geometry coverage percentages of particular areas in the layout to determine an adjustment to the modification. In some embodiments, and upper layer for an upper layer of an IC are modified using information (such as a density map) relating to a lower layout for a lower layer of the IC.
Abstract:
A method for inspecting lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to inspect a mask.
Abstract:
Methods and systems for allowing an Integrated Circuit designer to specify one or more design rules, and to determine the expected probability of success of the IC design based on the design rules. Probability information is compiled for each circuit component, that specifies the probability of the circuit component working if a characteristic of the circuit component is varied. As the design rules are examined, the probability of each component working is calculated. The probabilities are combined to determine the overall probability of success for the IC design. Furthermore, the IC design may be broken into a plurality of portions, and design rules can be separately specified for each portion. This allows a designer the flexibility to use different design rules on different portions of the IC design.
Abstract:
A method for generating lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to write a mask.
Abstract:
Methods and systems for representing the limitations of a lithographic process using a pattern library instead of, or in addition to, using design rules. The pattern library includes “known good” patterns, which chip fabricators know from experience are successful, and “known bad” patterns, which chip fabricators know to be unsuccessful. The pattern library can be used to contain exceptions to specified design rules, or to replace the design rules completely. In some implementations, the pattern library contains statistical information that is used to contribute to an overall figure of merit for the design. In other implementations, a routing tool may generate a plurality of possible IC layouts, and select one IC layout based on information contained in the pattern library.
Abstract:
An improved method, system, and computer program product is disclosed for predicting the geometric model of transistors once manufacturing and lithographic process effects are taken into consideration. This provides a much more accurate approach for modeling transistors since it is the actual expected geometric shapes that are analyzed, rather than an idealized model of the layout that does not accurately correspond to the actual manufactured IC product. The expected geometric shape includes systematic variations, which can be determined based on the layout, and the expected random variations, which can be determined based on the lithographic process.
Abstract:
An improved method, system, and computer program product is disclosed for increased accuracy for extraction of electrical parameters of an IC design. Extraction is performed upon the expected geometric model of the printed layout once manufacturing and lithographic process effects are taken into consideration. This provides a much more accurate approach for performing extraction since it is the actual expected geometric shapes that are analyzed, rather than an idealized model of the layout that does not accurately correspond to the actual manufactured IC product. The extracted electrical parameters are checked for acceptability. If not acceptable, then the IC design can be modified to address any identified problems or desired improvements to the design.
Abstract:
A method for modifying an upper layout for an upper layer of an IC using information of a lower layout for a lower layer of the IC, the method including 1) receiving the upper layout containing features and modifications to features, 2) producing a density map of the lower layout having geometry coverages of sub-regions of the lower layout, 4) selecting a feature in the upper layout, 5) retrieving, from the density map, the geometry coverage of a sub-region below the feature, 6) determining a vertical deviation of the feature using the geometry coverage, 7) determining an alteration to the modification using the vertical deviation, 8) applying the alteration to the modification, and 9) repeating for all features. In some embodiments, the upper layout is designed using a library of pretabulated models, each model containing a modification to a feature calculated to produce a satisfactory feature on a wafer.
Abstract:
A method for generating lithography masks includes generating integrated circuit design data and using context information from the integrated circuit design data to write a mask.
Abstract:
A mechanism to compress manufacturing awareness into a small representation and to enable the router to consult the representation without performing, or understanding, detailed process analysis, is disclosed.