公开(公告)号：US5944049A

公开(公告)日：1999-08-31

申请号：US893032

申请日：1997-07-15

Applicant: Christian Beyer ,  Keith Trenton ,  Mariusch Gregor ,  Robert Stolle ,  Rudolph Bahnen ,  Anja Plugge ,  Heinz Frings ,  Karl-Heinz Ronthaler ,  Dennis Smith ,  Jayesh Patel

Inventor： Christian Beyer ,  Keith Trenton ,  Mariusch Gregor ,  Robert Stolle ,  Rudolph Bahnen ,  Anja Plugge ,  Heinz Frings ,  Karl-Heinz Ronthaler ,  Dennis Smith ,  Jayesh Patel

IPC: F04B49/06 ,  F04B37/16 ,  F04B49/08 ,  F04D25/16 ,  F04D27/00 ,  G05D16/20 ,  F16K31/12 ,  F17D1/16 ,  E03B25/09

CPC classification number: G05D16/208 ,  F04B49/08 ,  F04D19/04 ,  F04D25/16 ,  F04D27/0253 ,  F04D27/0269 ,  F04B2203/0204 ,  F04B2205/172 ,  Y10S137/907 ,  Y10T137/0396 ,  Y10T137/7761

Abstract: A pressure for a chamber is regulated by controlling either the exhaust pressure at the exhaust side of a first vacuum pump or the internal pressure at a compression stage of the first vacuum pump, where the first vacuum pump is directly communicating with the chamber. The pressure of the chamber can be regulated by combinations of the following: controlling the variable rotational frequency of a roots vacuum pump, a pre-vacuum pump, or a high compression pump; controlling a control valve between a pre-vacuum pump and the first vacuum pump; controlling a control valve for injecting gas into the exhaust side of the first vacuum pump or into the compression stage of the first vacuum pump; and controlling a control valve or control valves for bypassing the first vacuum pump or a compression stage or compression stages of the first vacuum pump. To regulate the pressure in the chamber, several types of control rules can be used, including: a PID control rule, a gain scheduler, and a threshold comparison control rule.

Abstract translation: 通过控制第一真空泵的排气侧的排气压力或第一真空泵直接与室连通的第一真空泵的压缩级的内部压力来调节室的压力。 腔室的压力可以通过以下组合来调节：控制根真空泵，预真空泵或高压缩泵的可变转速; 控制预真空泵和第一真空泵之间的控制阀; 控制用于将气体注入到第一真空泵的排气侧或第一真空泵的压缩级中的控制阀; 以及控制用于绕过第一真空泵或第一真空泵的压缩级或压缩级的控制阀或控制阀。 为了调节室中的压力，可以使用几种类型的控制规则，包括：PID控制规则，增益调度器和阈值比较控制规则。

公开(公告)号：US09004107B2

公开(公告)日：2015-04-14

申请号：US13591212

申请日：2012-08-21

Applicant: Mariusch Gregor ,  John W. Lane ,  Michael Robert Rice ,  Justin Hough

Inventor： Mariusch Gregor ,  John W. Lane ,  Michael Robert Rice ,  Justin Hough

IPC: F16K11/20 ,  G05D16/20 ,  C23C16/455 ,  G05D7/06

CPC classification number: G05D16/2006 ,  C23C16/45561 ,  G05D7/0664 ,  Y10T137/0379 ,  Y10T137/7761 ,  Y10T137/87885

Abstract: The present invention provides methods and apparatus for controlling gas flow to a semiconductor-processing chamber. The invention includes deactivating ratio setpoint feedback control in a flow ratio controller; initiating gas flow through the flow ratio controller; moving valves of the flow ratio controller to a preset position based on a stored position when an upstream pressure reaches a stored upstream pressure value, wherein the stored position and the stored upstream pressure value were stored during a prior process run; determining that steady state flow ratio controller output flows have been reached; and activating ratio setpoint feedback control in the flow ratio controller. Numerous additional features are disclosed.

Abstract translation: 本发明提供了用于控制到半导体处理室的气流的方法和装置。 本发明包括流量比控制器中的停用比率设定点反馈控制; 启动气流通过流量比控制器; 当上游压力达到存储的上游压力值时，基于存储位置，将流量比控制器的阀移动到预设位置，其中在先前的处理运行期间存储所存储的位置和存储的上游压力值; 确定稳态流量比控制器输出流量已达到; 和流量比控制器中的启动比设定点反馈控制。 公开了许多附加特征。

公开(公告)号：US20130018500A1

公开(公告)日：2013-01-17

申请号：US13183520

申请日：2011-07-15

Applicant: KEITH BRIAN PORTHOUSE ,  JOHN W. LANE ,  MARIUSCH GREGOR ,  NIR MERRY ,  MICHAEL R. RICE ,  ALEX MINKOVICH ,  HONGBIN LI ,  DMITRY A. DZILNO

Inventor： KEITH BRIAN PORTHOUSE ,  JOHN W. LANE ,  MARIUSCH GREGOR ,  NIR MERRY ,  MICHAEL R. RICE ,  ALEX MINKOVICH ,  HONGBIN LI ,  DMITRY A. DZILNO

IPC: G05D16/20 ,  G06F17/11 ,  G05B13/04

CPC classification number: G05D16/2046 ,  G05B17/02 ,  H01L21/67017 ,  H01L21/67253

Abstract: Methods and apparatus are disclosed herein. In some embodiments, methods of controlling process chambers may include predetermining a relationship between pressure in a processing volume and a position of an exhaust valve as a function of a process parameter; setting the process chamber to a first state having a first pressure in the processing volume and a first value of the process parameter, wherein the exhaust valve is set to a first position based on the predetermined relationship to produce the first pressure at the first value; determining a pressure control profile to control the pressure as the process chamber is changed to a second state having a second pressure and a second process parameter value from the first state; and applying the pressure control profile to control the pressure by varying the position of the exhaust valve while changing the process chamber to the second state.

Abstract translation: 本文公开了方法和装置。 在一些实施例中，控制处理室的方法可以包括根据处理参数预先确定处理容积中的压力与排气门的位置之间的关系; 将所述处理室设定为处理容积中具有第一压力的第一状态和所述处理参数的第一值，其中所述排气阀基于所述预定关系设定在第一位置以产生所述第一值的所述第一压力; 当所述处理室改变为具有来自所述第一状态的第二压力和第二过程参数值的第二状态时，确定压力控制曲线以控制所述压力; 以及通过在将处理室改变到第二状态的同时改变排气门的位置来施加压力控制曲线来控制压力。

公开(公告)号：US08205629B2

公开(公告)日：2012-06-26

申请号：US12427947

申请日：2009-04-22

Applicant: Mariusch Gregor ,  John W. Lane

Inventor： Mariusch Gregor ,  John W. Lane

IPC: F16K31/12

CPC classification number: G01F25/003 ,  G01F25/0038 ,  Y10T137/0324 ,  Y10T137/7759

Abstract: A method and apparatus that solve the problem of accurate measurement of gas flow so that the delivery of gases in semiconductor processing may be performed with greater confidence and accuracy by performing real-time characterization of a lead-line for mass flow controller (MFC) flow verification are provided. In one embodiment a mass flow verifier (MFV) provides rate of rise information to a controller via a digital interface without correcting for lead-line influences. After receiving the rate of rise data, the tool host computer computes a gas mass correction factor in real-time based on at least one of the following: MFC temperature sensor data, lead-line temperature sensor data, lead-line pressure transducer data, and lead-line volume. The rate of rise data and gas mass correction factor are used to compute accurate mass flow. The accurate mass flow information may be used to calibrate the MFC.

Abstract translation: 一种解决气体流量精确测量问题的方法和装置，可以通过对质量流量控制器（MFC）流程的引线进行实时表征，以更高的置信度和准确性进行半导体处理中的气体输送 提供验证。 在一个实施例中，质量流量验证器（MFV）通过数字接口向控制器提供上升信息速率，而不会对引线影响进行校正。 在收到上升数据率之后，工具主机基于以下至少一个实时计算气体质量校正因子：MFC温度传感器数据，引线温度传感器数据，引线压力传感器数据， 和引线量。 上升率和气体质量校正因子用于计算精确质量流量。 准确的质量流量信息可用于校准MFC。

公开(公告)号：US08015989B2

公开(公告)日：2011-09-13

申请号：US12135857

申请日：2008-06-09

Applicant: John William Lane ,  Mariusch Gregor ,  Emir Vukotic

Inventor： John William Lane ,  Mariusch Gregor ,  Emir Vukotic

IPC: F16K21/00 ,  F17D1/16

CPC classification number: F17D1/20 ,  F16L55/02754 ,  F16L55/055 ,  Y10T137/0396 ,  Y10T137/7922

Abstract: A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.

Abstract translation: 提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。 在一个实施例中，减压装置设置在流体控制组件内的安装基板和控制阀之间，该流体控制组件与基板处理室流体连通。 减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。

公开(公告)号：US20090301567A1

公开(公告)日：2009-12-10

申请号：US12135857

申请日：2008-06-09

Applicant: John William Lane ,  Mariusch Gregor ,  Emir Vukotic

Inventor： John William Lane ,  Mariusch Gregor ,  Emir Vukotic

IPC: F16K21/00 ,  F17D1/16

CPC classification number: F17D1/20 ,  F16L55/02754 ,  F16L55/055 ,  Y10T137/0396 ,  Y10T137/7922

Abstract: A method and apparatus are provided for a cost effective pressure dampening device used in a fluid delivery system for substrate processing. In one embodiment, the pressure dampening device is disposed between a mounting substrate and a control valve within a fluid control assembly in fluid communication with a substrate processing chamber. The pressure dampening device is capable of dampening small pressure perturbations in a process fluid which is used for substrate processing.

Abstract translation: 提供了一种用于在用于衬底处理的流体输送系统中使用的成本有效的压力衰减装置的方法和装置。 在一个实施例中，减压装置设置在流体控制组件内的安装基板和控制阀之间，该流体控制组件与基板处理室流体连通。 减压装置能够抑制用于基板处理的工艺流体中的小压力扰动。