公开(公告)号：US08541326B2

公开(公告)日：2013-09-24

申请号：US13459624

申请日：2012-04-30

申请人： Ryusuke Morita ,  Takuya Nakagawa ,  Kei Iwata ,  Masaaki Takata

发明人： Ryusuke Morita ,  Takuya Nakagawa ,  Kei Iwata ,  Masaaki Takata

IPC分类号： C03C3/06 ,  C03B19/06 ,  C03B19/00

CPC分类号： C03C3/06 ,  C03B19/1453 ,  C03B2201/03 ,  C03B2201/04 ,  C03C4/0085 ,  C03C2201/21 ,  C03C2201/23 ,  G03F1/50 ,  G03F7/70958 ,  Y02P40/57

摘要： The present invention relates to an optical member for deep ultraviolet having a wavelength of 250 nm or shorter, containing a synthetic silica glass which does not substantially contain a halogen element, has a maximum OH group content of less than 10 ppm by weight, has contents of ODC (oxygen deficient centers) and E-prime center of each less than 1×1014 cm−3, does not substantially contain SiH and peroxy linkage, and has a fictive temperature of 1,050° C. or lower.

摘要翻译： 本发明涉及一种波长为250nm以下的深紫外线用光学构件，其含有基本上不含卤素元素的合成石英玻璃，其OH基含量的最大值小于10重量ppm，含有 的ODC（缺氧中心）和E-prime中心各自小于1×1014cm-3，基本上不含有SiH和过氧键，并且具有1050℃或更低的假想温度。

公开(公告)号：US20120182622A1

公开(公告)日：2012-07-19

申请号：US13367780

申请日：2012-02-07

申请人： Masaaki TAKATA ,  Long Shao ,  Kei Iwata ,  Tomonori Ogawa

发明人： Masaaki TAKATA ,  Long Shao ,  Kei Iwata ,  Tomonori Ogawa

IPC分类号： G02B27/12 ,  C03B25/00 ,  B82Y20/00

CPC分类号： C03B19/1453 ,  C03B2201/04 ,  G03F7/70966 ,  Y02P40/57

摘要： The present invention provides a synthetic silica glass for an optical member in which not only a fast axis direction in an optical axis direction is controlled, and a birefringence in an off-axis direction is reduced, but a magnitude of a birefringence in the optical axis direction is controlled to an arbitrary value, such that an average value of a value BR cos 2θxy defined from a birefringence BR and a fast axis direction θxy as measured from a parallel direction to the principal optical axis direction is defined as an average birefringence AveBR cos 2θxy, and when a maximum value of a birefringence measured from a vertical direction to the principal optical axis direction of the optical member is defined as a maximum birefringence BRmax in an off-axis direction, the following expression (1-1) and expression (2-1) are established: −1.0≦AveBR cos 2θxy

摘要翻译： 本发明提供一种用于光学构件的合成石英玻璃，其不仅控制光轴方向上的快轴方向，并且减少偏轴双折射，而且在光轴上具有双折射的大小 方向被控制为任意值，使得从平行方向到主光轴方向测量的从双折射BR和快轴方向＆yt; xy定义的值BR cos 2＆amp; t s; xy的平均值被定义为 平均双折射度AveBR cos 2＆amp; t s; xy，并且当从垂直方向测量到光学构件的主光轴方向的双折射的最大值被定义为在偏轴方向上的最大双折射率BRmax时，以下表达式（1 -1）和表达式（2-1）：-1.0＆nlE; AveBR cos 2＆thetas; xy <0.0（1-1）0.0＆nlE; BRmax＆nlE; 1.0（2-1）。

公开(公告)号：US20120154245A1

公开(公告)日：2012-06-21

申请号：US13404039

申请日：2012-02-24

申请人： Shoji NAGUMO ,  Masaaki TAKATA ,  Noriyuki UEKI ,  Hiromasa KOYAMA

发明人： Shoji NAGUMO ,  Masaaki TAKATA ,  Noriyuki UEKI ,  Hiromasa KOYAMA

IPC分类号： H01Q1/50 ,  H01Q23/00

CPC分类号： H01Q1/243 ,  H01Q5/335 ,  H01Q9/40 ,  H03H7/40

摘要： This disclosure provides an antenna apparatus in which stable antenna characteristics are maintained by detecting surrounding conditions that affect the antenna characteristics and appropriately compensating the antenna characteristics. More specifically, when surrounding condition such as a human body (e.g., a palm or fingers) approaches and enters an electric field of a pseudo dipole formed by an antenna element electrode, a stray capacitance is sensed and stable antenna characteristics are maintained by appropriately controlling an antenna matching circuit to compensate for a change in the antenna characteristics due to the approach of the surrounding condition.

摘要翻译： 本公开提供了一种天线装置，其中通过检测影响天线特性并适当地补偿天线特性的周围条件来维持稳定的天线特性。 更具体地说，当诸如人体（例如，手掌或手指）的周围环境接近并进入由天线元件电极形成的伪偶极子的电场时，感测杂散电容并且通过适当地控制来保持稳定的天线特性 天线匹配电路，用于补偿由于周围环境的接近造成的天线特性的变化。

公开(公告)号：US20070155099A1

公开(公告)日：2007-07-05

申请号：US11685077

申请日：2007-03-12

申请人： Masaaki Takata ,  Mitsumasa Koyanagi

发明人： Masaaki Takata ,  Mitsumasa Koyanagi

IPC分类号： H01L21/336 ,  H01L21/3205

CPC分类号： H01L29/42332 ,  Y10S977/943

摘要： There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used. Further, at a time of deposition of charge retention layer, the supply ratio of the nano-particle material and the insulating matrix material, such as the mixture ratio of materials of both phases in a target in a sputtering method, is adjusted. By these methods, the charge retention characteristic of the floating-gate type nonvolatile semiconductor memory device can be improved, and the above-mentioned problem of the nonvolatile semiconductor memory device can be solved.

摘要翻译： 在常规的Si型浮栅型非易失性半导体存储器件中存在由于Si的电子亲和力不足而导致的电荷保持特性低的问题，因此存储器性能的改善，例如存储器单元的缩小和 提高运行速度，由于基本问题而难以实现。 为了解决上述问题，在本发明的非易失性半导体存储器件中，使用具有大功函数或大电子亲和性的材料或具有接近半导体衬底或控制栅的功函数的材料 为浮门保留费用。 此外，使用对绝缘基体具有小的电子亲和力的无定形材料。 此外，在电荷保持层的沉积时，调整纳米粒子材料和绝缘基体材料的供给比例，例如溅射法中的靶中的两相的材料的混合比例。 通过这些方法，可以提高浮栅型非易失性半导体存储器件的电荷保持特性，并且可以解决上述非易失性半导体存储器件的问题。

公开(公告)号：US20060118853A1

公开(公告)日：2006-06-08

申请号：US11003421

申请日：2004-12-06

申请人： Masaaki Takata ,  Mitsumasa Koyanagi

发明人： Masaaki Takata ,  Mitsumasa Koyanagi

IPC分类号： H01L29/76

CPC分类号： H01L29/42332 ,  Y10S977/943

摘要： There has been a problem in conventional Si-type floating-gate type nonvolatile semiconductor memory devices that the charge retention characteristic is low due to insufficiently large electron affinity of Si, therefore improvement of the memory performances, such as scaling down of a memory cell and increasing operation speed, have been difficult to be achieved due to the essential problem. In order to solve the above problem, in the nonvolatile semiconductor memory device of the present invention, a material having large work function or large electron affinity or a material having a work function close to that of semiconductor substrate or of a control gate, is employed for a floating gate retaining charges. Further, an amorphous material having small electron affinity for an insulating matrix is used. Further, at a time of deposition of charge retention layer, the supply ratio of the nano-particle material and the insulating matrix material, such as the mixture ratio of materials of both phases in a target in a sputtering method, is adjusted. By these methods, the charge retention characteristic of the floating-gate type nonvolatile semiconductor memory device can be improved, and the above-mentioned problem of the nonvolatile semiconductor memory device can be solved.

摘要翻译： 在常规的Si型浮栅型非易失性半导体存储器件中存在由于Si的电子亲和力不足而导致的电荷保持特性低的问题，因此存储器性能的改善，例如存储器单元的缩小和 增加运行速度，由于基本问题而难以实现。 为了解决上述问题，在本发明的非易失性半导体存储器件中，使用具有大功函数或大电子亲和性的材料或具有接近半导体衬底或控制栅的功函数的材料 为浮门保留费用。 此外，使用对绝缘基体具有小的电子亲和力的无定形材料。 此外，在电荷保持层的沉积时，调整纳米粒子材料和绝缘基体材料的供给比例，例如溅射法中的靶中的两相的材料的混合比例。 通过这些方法，可以提高浮栅型非易失性半导体存储器件的电荷保持特性，并且可以解决上述非易失性半导体存储器件的问题。

公开(公告)号：US20050122775A1

公开(公告)日：2005-06-09

申请号：US11033142

申请日：2005-01-12

申请人： Mitsumasa Koyanagi ,  Masaaki Takata ,  Shinji Kondoh

发明人： Mitsumasa Koyanagi ,  Masaaki Takata ,  Shinji Kondoh

IPC分类号： C23C14/06 ,  H01L21/28 ,  H01L21/336 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  G11C16/04

CPC分类号： H01L29/42348 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/7888 ,  Y10S977/773 ,  Y10S977/936

摘要： There is provided a nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption. The nonvolatile semiconductor memory device comprises an insulating layer 3b with electric insulation, wherein, a charge retention layer 3 formed adjacent to a tunnel insulating film 2 contains nano-particles 3a comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12 to 10+14 particles per square centimeter.

摘要翻译： 提供了可以缩短数据写入和擦除时间的非易失性半导体存储器件，显着提高耐久特性并以低功耗被激活。 非易失性半导体存储器件包括具有电绝缘性的绝缘层3b，其中与隧道绝缘膜2相邻形成的电荷保持层3包含纳米粒子3a，该纳米粒子由由至少一种单元素物质构成的化合物或 粒径为5nm以下的化合物作为浮栅，分别独立地分散，密度为10〜12个/ 10〜14个/ 平方厘米。

公开(公告)号：US07355238B2

公开(公告)日：2008-04-08

申请号：US11003421

申请日：2004-12-06

申请人： Masaaki Takata ,  Mitsumasa Koyanagi

发明人： Masaaki Takata ,  Mitsumasa Koyanagi

IPC分类号： H01L29/76

CPC分类号： H01L29/42332 ,  Y10S977/943

摘要： A nonvolatile semiconductor memory device including a source region and a drain region formed on a surface of a semiconductor substrate, a channel-forming region formed so as to connect the source region and the drain region or so as to be sandwiched between the source region and the drain region, a tunnel insulating film formed in contact with the channel-forming region, a charge retention layer formed adjacently to the tunnel insulating film, a gate insulating film formed adjacently to the charge retention layer, and a control gate formed adjacently to the gate insulating film. The charge retention layer includes an insulating matrix having, per nonvolatile semiconductor memory device, one conductive nano-particle which is made of at least one single-element substance or chemical compound that functions as a floating gate.

摘要翻译： 一种非易失性半导体存储器件，包括形成在半导体衬底的表面上的源极区域和漏极区域，形成为连接源极区域和漏极区域的沟道形成区域，以夹在源极区域和源极区域之间， 漏极区域，与沟道形成区域形成的隧道绝缘膜，与隧道绝缘膜相邻形成的电荷保持层，与电荷保持层相邻形成的栅极绝缘膜，以及与栅极绝缘膜相邻形成的控制栅极 栅极绝缘膜。 电荷保持层包括绝缘矩阵，每个非易失性半导体存储器件具有由至少一个用作浮栅的单一元素物质或化合物制成的导电纳米颗粒。

公开(公告)号：US20050053890A1

公开(公告)日：2005-03-10

申请号：US10809705

申请日：2004-03-26

申请人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

发明人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

IPC分类号： H01L21/324 ,  C23C16/44 ,  C23C16/46 ,  C30B33/02 ,  H01L21/00 ,  F27D1/00

CPC分类号： C23C16/4409 ,  C23C16/46 ,  C30B33/02 ,  H01L21/67109

摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).

摘要翻译： 一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕 外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递 系数为50至2,000W /（m 2 K）。

公开(公告)号：US06320831B1

公开(公告)日：2001-11-20

申请号：US09341463

申请日：1999-07-12

申请人： Takashi Inoue ,  Keiichi Kameda ,  Tatsuya Suzuki ,  Hideaki Hatanaka ,  Masaaki Takata

发明人： Takashi Inoue ,  Keiichi Kameda ,  Tatsuya Suzuki ,  Hideaki Hatanaka ,  Masaaki Takata

IPC分类号： G11B700

CPC分类号： G11B7/0903 ,  G11B7/24082 ,  G11B11/10565

摘要： An object of this invention is to provide a method for processing signals for an optical disc device and an optical disc device for immediately determining the on-track state of a main beam light impinging on an optical disc including land areas on which information is recorded, said optical disc being track-formatted to have a double spiral structure. In recording or reproducing information on or from the land areas while track-controlling a first reflected light (MB) based on a second reflect light (SB1) and a third reflect light (SB2), the phases of a sum signal (SUM) and a difference signal (DIFF) between a first push-pull signal (PP1) obtained from an output from a first split photo conductor (21) and a second push-pull signal (PP2) obtained from an output from a second split photo conductor (23) are compared to determine from the mutual phase relationship which land area is providing the first reflected light (MB).

摘要翻译： 本发明的目的是提供一种用于处理用于光盘装置和光盘装置的信号的方法，用于立即确定入射在包括其上记录信息的陆地区域的光盘上的主光束的轨道状态， 所述光盘被跟踪格式化以具有双螺旋结构。 在基于第二反射光（SB1）和第三反射光（SB2）跟踪控制第一反射光（MB）的同时在陆地区域上或从陆地区域记录或再现信息时，和信号（SUM）和 从第一分离光导体（21）的输出获得的第一推挽信号（PP1）和从第二分离光导体的输出获得的第二推挽信号（PP2）之间的差分信号（DIFF） 23）进行比较，从相对相位关系确定哪个面积提供第一反射光（MB）。