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    Nonvolatile semiconductor memory element excellent in charge retention properties and process for producing the same
    1.
    发明授权
    Nonvolatile semiconductor memory element excellent in charge retention properties and process for producing the same 有权
    电荷保持性优异的非挥发性半导体存储元件及其制造方法

    公开(公告)号：US07820515B2

    公开(公告)日：2010-10-26

    申请号：US12046763

    申请日：2008-03-12

    申请人： Masaaki Takata ,  Mitsumasa Koyanagi

    发明人： Masaaki Takata ,  Mitsumasa Koyanagi

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28273 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/31645 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

    摘要： A process for producing a nonvolatile semiconductor memory having a mixed or laminated structure of a hardly oxidizable material composed of a hardly oxidizable element having Gibbs' free energy for forming oxide higher than that of Si under the same temperature condition at 1 atm and in temperature range of 0° C. to 1,200° C. and an oxide of an easily oxidizable material composed of an element having Gibbs' free energy for forming oxide lower than that of Si under the same temperature condition at 1 atm in the temperature range and Si. The process includes forming a portion of the hardly oxidizable material and a portion of the oxide by physical forming method and carrying out heat treatment in oxidizing and reducing gas mixture. The ratio of the gases and the temperature are controlled so that the hardly oxidizable material is reduced and the oxide is oxidized in the temperature range.

    摘要翻译： 一种制造非易失性半导体存储器的方法，该非易失性半导体存储器具有在1atm和在温度范围内的相同温度条件下由具有吉布斯自由能的几乎不可氧化的元素组成的几乎不可氧化的材料的混合或层压结构，以形成高于Si的氧化物的氧化物 0℃〜1200℃的温度范围内的容易氧化材料的氧化物以及在相同的温度条件下在1atm的温度范围和Si下由具有吉布斯自由能的元素组成的氧化物，以形成低于Si的氧化物的氧化物。 该方法包括通过物理形成方法形成一部分难以氧化的材料和一部分氧化物，并在氧化和还原气体混合物中进行热处理。 控制气体和温度的比例，使得难以氧化的材料减少，氧化物在温度范围内被氧化。

    Nonvolatile semiconductor memory device and manufacturing process of the same
    2.
    发明授权
    Nonvolatile semiconductor memory device and manufacturing process of the same 失效
    非易失性半导体存储器件及其制造工艺相同

    公开(公告)号：US07550802B2

    公开(公告)日：2009-06-23

    申请号：US11033142

    申请日：2005-01-12

    申请人： Mitsumasa Koyanagi ,  Masaaki Takata

    发明人： Mitsumasa Koyanagi ,  Masaaki Takata

    IPC分类号： H01L29/792

    CPC分类号： H01L29/42348 ,  B82Y10/00 ,  H01L21/28273 ,  H01L21/28282 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7883 ,  H01L29/7888 ,  Y10S977/773 ,  Y10S977/936

    摘要： A nonvolatile semiconductor memory device which can shorten data writing and erasing time, significantly improve the endurance characteristic and be activated with low power consumption includes an insulating layer with electric insulation, wherein, a charge retention layer formed adjacent to a tunnel insulating film contains nano-particles comprised of a compound which is constituted from at least one single-element substance or chemical compound having a particle diameter of at most 5 nm functions as a floating gate, and which are independently dispersed with a density of from 10+12 to 10+14 particles per square centimeter.

    摘要翻译： 可以缩短数据写入和擦除时间，显着提高耐久特性并且以低功耗被激活的非易失性半导体存储器件包括具有电绝缘的绝缘层，其中，与隧道绝缘膜相邻形成的电荷保持层包含纳米 - 由至少一种单一元素物质或粒径为5nm以下的化合物构成的化合物构成的微粒用作浮栅，独立地以10 + 12〜10+的密度分散， 每平方厘米14颗颗粒。

    SYNTHETIC QUARTZ GLASS WITH FAST AXES OF BIREFRINGENCE DISTRIBUTED IN CONCENTRIC-CIRCLE TANGENT DIRECTIONS AND PROCESS FOR PRODUCING THE SAME
    3.
    发明申请
    SYNTHETIC QUARTZ GLASS WITH FAST AXES OF BIREFRINGENCE DISTRIBUTED IN CONCENTRIC-CIRCLE TANGENT DIRECTIONS AND PROCESS FOR PRODUCING THE SAME 审中-公开

    公开(公告)号：US20080292882A1

    公开(公告)日：2008-11-27

    申请号：US12182361

    申请日：2008-07-30

    申请人： Noriyuki AGATA ,  Masaaki TAKATA ,  Tomonori OGAWA ,  Kei IWATA

    发明人： Noriyuki AGATA ,  Masaaki TAKATA ,  Tomonori OGAWA ,  Kei IWATA

    IPC分类号： C03C12/00 ,  C03B37/005

    CPC分类号： C03B19/1453 ,  C03B2201/02 ,  C03B2201/04 ,  C03C3/06 ,  C03C4/0071 ,  C03C4/0085 ,  C03C2201/23 ,  C03C2203/44 ,  Y02P40/57 ,  Y10T428/2982

    摘要： The present invention provides a synthetic quartz glass having a diameter of 100 mm or more for using in an optical apparatus comprising a light source emitting a light having a wavelength of 250 nm or less, the synthetic quartz glass having, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of −8 to +60 ppm; and an unbiased standard deviation a of a differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of 10 ppm or less, the unbiased standard deviation a being determined with the following formula (1): σ = ∑ i = 1 n  ( X i - X _ ) 2 n - 1   providing  ;   X i = Δ   n _ OH   i Δ   r i * = n _ OH   i - n _ OH   i + 1  r i * -  r i + 1 * ( 1 ) : differential OH group concentration at measurement point i normalized with respect to the radius R of the synthetic quartz glass; n _ OH   i = n OH   i - 1 + n OH   i + n OH   i + 1 3 : OH group concentration at measurement point i in terms of moving average for three points including the two points before and after the measurement point i;  r i * = r i R : radius at measurement point i normarized with respect to the radius R of the synthetic quartz glass; X : average of OH group concentrations Xi in the whole evaluation region; and n : number of measurement points in the evaluation region (integer of 2 or more).

    SYNTHETIC QUARTZ GLASS WITH RADIAL DISTRIBUTION OF FAST AXES OF BIREFRINGENCE AND PROCESS FOR PRODUCING THE SAME
    4.
    发明申请
    SYNTHETIC QUARTZ GLASS WITH RADIAL DISTRIBUTION OF FAST AXES OF BIREFRINGENCE AND PROCESS FOR PRODUCING THE SAME 审中-公开

    公开(公告)号：US20080292881A1

    公开(公告)日：2008-11-27

    申请号：US12182327

    申请日：2008-07-30

    申请人： Masaaki TAKATA ,  Noriyuki AGATA ,  Tomonori OGAWA ,  Kei IWATA

    发明人： Masaaki TAKATA ,  Noriyuki AGATA ,  Tomonori OGAWA ,  Kei IWATA

    IPC分类号： C03C3/06 ,  C03B37/00

    CPC分类号： C03C3/06 ,  C03B19/1453 ,  C03B2201/075 ,  C03B2201/23 ,  C03C2201/23 ,  Y02P40/57 ,  Y10T428/2982

    摘要： The present invention provides a synthetic quartz glass having a diameter of 100 mm or more for using in an optical apparatus comprising a light source emitting a light having a wavelength of 250 nm or less, the synthetic quartz glass having, in a region located inward from the periphery thereof by 10 mm or more in a plane perpendicular to the optical axis of the synthetic quartz glass: a birefringence of 0.5 nm or less per thickness of 1 cm with respect to a light having a wavelength of 193 nm; an OH group concentration of 60 ppm or less; an averaged differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of not less than −60 ppm and less than −8 ppm; and an unbiased standard deviation σ of a differential OH group concentration from the center of the synthetic quartz glass toward a peripheral direction thereof, normalized with respect to the radius of the synthetic quartz glass, of 10 ppm or less, the unbiased standard deviation σ being determined with the following formula (1): σ = ∑ i = 1 n  ( X i - X _ ) 2 n - 1   providing ;   X i = Δ   n _ OHi Δ   r i * = n _ OHi - n _ OHi + 1 r i * - r i + 1 * : ( 1 ) differential OH group concentration at measurement point i normalized with respect to the radius R of the synthetic quartz glass; n _ OHi = n OHi - 1 + n OHi + n OHi + 1 3 : OH group concentration at measurement point i in terms of moving average for three points including the two points before and after the measurement point i; r i * = r i R : radius at measurement point i normarized with respect to the radius R of the synthetic quartz glass; X: average of OH group concentrations Xi in the whole evaluation region; and n: number of measurement points in the evaluation region (integer of 2 or more).

    Thermal treatment system for semiconductors
    6.
    发明授权
    Thermal treatment system for semiconductors 失效
    半导体热处理系统

    公开(公告)号：US06988886B2

    公开(公告)日：2006-01-24

    申请号：US10809705

    申请日：2004-03-26

    申请人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

    发明人： Masaaki Takata ,  Nobuo Kageyama ,  Susumu Otaguro ,  Jiro Nishihama

    IPC分类号： F27D1/18

    CPC分类号： C23C16/4409 ,  C23C16/46 ,  C30B33/02 ,  H01L21/67109

    摘要： A thermal treatment system for semiconductors comprises an outer tube made of silicon carbide, a base hermetically supporting a lower portion of the outer tube, a lid selectively opening and closing an opening formed in a central portion of the base, and a reactor wall surrounding an outer peripheral wall and the like of the outer tube and having a heater provided on an inner side, wherein an annular sealing member and an annular supporting member are interposed between the outer tube and the base, and wherein the supporting member has an effective heat transfer coefficient of 50 to 2,000 W/(m2·K).

    摘要翻译： 一种用于半导体的热处理系统包括由碳化硅制成的外管，密封地支撑外管的下部的底座，选择性地打开和关闭形成在基座的中心部分中的开口的盖子和围绕 外筒的外周壁等，并且具有设置在内侧的加热器，其中环形密封构件和环形支撑构件插入在外管和基座之间，并且其中支撑构件具有有效的热传递 系数为50〜2000W /（m 2·K）。

    Synthesized silica glass for optical component
    7.
    发明授权
    Synthesized silica glass for optical component 有权
    用于光学部件的合成石英玻璃

    公开(公告)号：US08498056B2

    公开(公告)日：2013-07-30

    申请号：US13367780

    申请日：2012-02-07

    申请人： Masaaki Takata ,  Long Shao ,  Kei Iwata ,  Tomonori Ogawa

    发明人： Masaaki Takata ,  Long Shao ,  Kei Iwata ,  Tomonori Ogawa

    IPC分类号： G02B27/12 ,  C03B11/08 ,  C03B23/22

    CPC分类号： C03B19/1453 ,  C03B2201/04 ,  G03F7/70966 ,  Y02P40/57

    摘要： The present invention provides a synthetic silica glass for an optical member in which not only a fast axis direction in an optical axis direction is controlled, and a birefringence in an off-axis direction is reduced, but a magnitude of a birefringence in the optical axis direction is controlled to an arbitrary value, such that an average value of a value BR cos2θxy defined from a birefringence BR and a fast axis direction θxy as measured from a parallel direction to the principal optical axis direction is defined as an average birefringence AveBR cos2θxy, and when a maximum value of a birefringence measured from a vertical direction to the principal optical axis direction of the optical member is defined as a maximum birefringence BRmax in an off-axis direction, the following expression (1-1) and expression (2-1) are established: −1.0≦AveBR cos2θxy

    摘要翻译： 本发明提供一种用于光学构件的合成石英玻璃，其不仅控制光轴方向上的快轴方向，并且减少偏轴双折射，而且在光轴上具有双折射的大小 方向被控制为任意值，使得从平行方向到主光轴方向测量的从双折射BR和快轴方向三角形定义的值BR cos2thetaxy的平均值被定义为平均双折射AveBR cos2thetaxy， 并且当将从光学构件的垂直方向到主光轴方向测量的双折射的最大值定义为离轴方向上的最大双折射BRmax时，下列表达式（1-1）和表达式（2- 1）建立：-1.0@AveBR cos2thetaxy <0.0（1-1）0.0 @ BRmax @ 1.0（2-1）。

    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT EXCELLENT IN CHARGE RETENTION PROPERTIES AND PROCESS FOR PRODUCING THE SAME
    9.
    发明申请
    NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT EXCELLENT IN CHARGE RETENTION PROPERTIES AND PROCESS FOR PRODUCING THE SAME 有权
    非挥发性半导体存储元件在充电保持性方面的优异性及其制造方法

    公开(公告)号：US20080171411A1

    公开(公告)日：2008-07-17

    申请号：US12046763

    申请日：2008-03-12

    申请人： Masaaki TAKATA ,  Mitsumasa Koyanagi

    发明人： Masaaki TAKATA ,  Mitsumasa Koyanagi

    IPC分类号： H01L21/8234 ,  H01L21/336

    CPC分类号： H01L21/28273 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/31645 ,  H01L29/42332 ,  H01L29/66825 ,  H01L29/7881

    摘要： A nonvolatile semiconductor memory element enabling to improve insulation performance of an insulator around a floating gate and to decrease the ratio of oxidized metal ultrafine particles in the floating gate, are provided.In a process for producing nonvolatile semiconductor memory element comprising a floating gate made of a hardly oxidizable material having a Gibbs' formation free energy for forming its oxide higher than that of Si in a range of from 0° C. to 1,200° C., and an insulator made of an oxide of an easily oxidizable material surrounding the floating gate and having such an energy equivalent or lower than that of Si, the floating gate made of hardly oxidizable material is formed by using a physical forming method, the oxide of the easily oxidizable material is formed by using a physical forming method or a chemical forming method, and after a gate insulation film is formed, a heat treatment is carried out in a mixed atmosphere of an oxidizing gas and a reducing gas in a temperature range of from 0° C. to 1,200° C. while the mixture ratio of the mixed gas and the temperature are controlled so that only the hardly oxidizable material is reduced and only the oxide of the easily oxidizable material is oxidized.

    摘要翻译： 提供一种非易失性半导体存储元件，其能够提高浮动栅极周围的绝缘体的绝缘性能并降低浮栅中的氧化金属超微粒子的比例。 在制造非易失性半导体存储元件的方法中，所述非易失性半导体存储元件包括由几何可氧化材料制成的浮栅，所述浮栅具有Gibbs'形成自由能，用于在0℃至1200℃的范围内形成高于Si的氧化物， 以及由易于氧化的材料的氧化物构成的绝缘体，该氧化物围绕浮动栅极并且具有等于或低于Si的能量，由几何可氧化材料制成的浮栅是通过使用物理成形法形成的， 通过使用物理形成方法或化学成型方法形成易氧化材料，在形成栅极绝缘膜之后，在氧化气体和还原气体的混合气氛中，在 0℃至1200℃，同时控制混合气体和温度的混合比，使得只有几乎不可氧化的材料被还原，并且只有易氧化的氧化物 太阳能被氧化。

    Antenna apparatus
    10.
    发明授权
    Antenna apparatus 有权

    公开(公告)号：US10084229B2

    公开(公告)日：2018-09-25

    申请号：US13404039

    申请日：2012-02-24

    申请人： Shoji Nagumo ,  Masaaki Takata ,  Noriyuki Ueki ,  Hiromasa Koyama

    发明人： Shoji Nagumo ,  Masaaki Takata ,  Noriyuki Ueki ,  Hiromasa Koyama

    IPC分类号： H01Q5/335 ,  H01Q1/24 ,  H01Q9/40 ,  H03H7/40

    CPC分类号： H01Q1/243 ,  H01Q5/335 ,  H01Q9/40 ,  H03H7/40

    摘要： This disclosure provides an antenna apparatus in which stable antenna characteristics are maintained by detecting surrounding conditions that affect the antenna characteristics and appropriately compensating the antenna characteristics. More specifically, when surrounding condition such as a human body (e.g., a palm or fingers) approaches and enters an electric field of a pseudo dipole formed by an antenna element electrode, a stray capacitance is sensed and stable antenna characteristics are maintained by appropriately controlling an antenna matching circuit to compensate for a change in the antenna characteristics due to the approach of the surrounding condition.