公开(公告)号：US5362461A

公开(公告)日：1994-11-08

申请号：US953960

申请日：1992-10-01

申请人： Tadahiro Ohmi ,  Hiroyuki Harada ,  Nobuhiro Miki ,  Toshiro Fukutome ,  Matagoro Maeno ,  Norio Terasawa ,  Yoshihiro Eto ,  Masahiro Sakata

发明人： Tadahiro Ohmi ,  Hiroyuki Harada ,  Nobuhiro Miki ,  Toshiro Fukutome ,  Matagoro Maeno ,  Norio Terasawa ,  Yoshihiro Eto ,  Masahiro Sakata

IPC分类号： C01F11/22

CPC分类号： C01F11/22

摘要： Calcium fluoride with high purity of very small content of unreacted calcium carbonate and silica is recovered from an etchant mainly composed of hydrogen fluoride or hydrogen fluoride and ammonium fluoride. The etchant is reacted with calcium carbonate with transfer directions of the etchant and calcium carbonate being controlled within a composition region in which mole equivalent ratio of ammonium fluoride/hydrogen fluoride is specified.

摘要翻译： 从主要由氟化氢或氟化氢和氟化铵组成的蚀刻剂回收具有非常小含量的未反应的碳酸钙和二氧化硅的高纯度的氟化钙。 蚀刻剂与碳酸钙反应，其中蚀刻剂和碳酸钙的转移方向被控制在其中规定了氟化铵/氟化氢的摩尔当量比的组成区域内。

公开(公告)号：US5100495A

公开(公告)日：1992-03-31

申请号：US682412

申请日：1991-04-08

申请人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

发明人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

IPC分类号： C23F1/08 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01J37/3244 ,  C23F1/08 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/31116

摘要： Dry etching apparatus composed of any of metal, silica, ceramic or combination thereof with a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of stainless steel or nickel. There is also disclosed a dry-etching method with the dry-etching apparatus, and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.

公开(公告)号：US5073232A

公开(公告)日：1991-12-17

申请号：US454575

申请日：1989-12-21

申请人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

发明人： Tadahiro Ohmi ,  Masahiro Miki ,  Hirohisa Kikuyama ,  Matagoro Maeno

IPC分类号： C23F1/08 ,  H01J37/32 ,  H01L21/306 ,  H01L21/311

CPC分类号： H01J37/3244 ,  C23F1/08 ,  H01L21/02049 ,  H01L21/02063 ,  H01L21/31116

摘要： Disclosed is a dry-etching apparatus composed of any of metal, silica, ceramic or combination thereof including a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of such metal as stainless steel or nickel. There is also provided according to the invention a dry-etching method with the dry-etching apparatus, a cooled anhydrous hydrogen fluoride gas source and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.