公开(公告)号：US20070286221A1

公开(公告)日：2007-12-13

申请号：US11452791

申请日：2006-06-13

Applicant: Mau-Lin Wu ,  Tung-Hui Lee ,  Chieh-Hua Chen ,  Hsin-Pu Chung ,  Youn-Tai Lee

Inventor： Mau-Lin Wu ,  Tung-Hui Lee ,  Chieh-Hua Chen ,  Hsin-Pu Chung ,  Youn-Tai Lee

IPC: H04L12/56 ,  H04J3/02

CPC classification number: H04L12/403

Abstract: A memory management method and a memory architecture for transmitting ultra-wideband (UWB) prioritized channel access (PCA) frames are provided. The method comprises the steps of assigning a pre-load queue to each of a plurality of access categories for storing UWB PCA frames to be transmitted, and, when one of the access categories gains transmission opportunity (TXOP), assigning a common area queue to that access category for storing UWB PCA frames to be transmitted. Moreover, when a UWB PCA frame in one of the pre-load queues reaches a predetermined size, the access category corresponding to the pre-load queue starts its backoff state machine in order to gain the TXOP.

Abstract translation: 提供了用于发送超宽带（UWB）优先信道接入（PCA）帧的存储器管理方法和存储器架构。 该方法包括以下步骤：将预加载队列分配给用于存储要发送的UWB PCA帧的多个接入类别中的每一个，并且当其中一个接入类别获得传输机会（TXOP）时，将公共区域队列分配给 用于存储要发送的UWB PCA帧的接入类别。 此外，当一个预加载队列中的UWB PCA帧达到预定大小时，对应于预加载队列的访问类别启动其退避状态机，以获得TXOP。

公开(公告)号：US06912109B1

公开(公告)日：2005-06-28

申请号：US09604067

申请日：2000-06-26

Applicant: Ming-Dou Ker ,  Mau-Lin Wu

Inventor： Ming-Dou Ker ,  Mau-Lin Wu

IPC: H01L27/02 ,  H02H9/00

CPC classification number: H01L27/0266

Abstract: A new ESD (Electrostatic Discharge) protection circuit with well-triggered PMOS is provided for application in power-rail ESD protection. A PMOS device is connected between the VDD and VSS power lines to sustain the ESD overstress current during the time that the ESD voltage is applied between the VDD and the VSS power lines. In deep submicron CMOS p-substrate technology, the weak point of ESD overstress control is typically associated with the NMOS device. For this reason, the invention uses a power-rail ESD clamp circuit that incorporates a PMOS device. Applying gate-coupled and N-well triggering techniques, the PMOS can be turned on more efficiently when the ESD overstress is present between the power lines. For p-substrate CMOS technology, it is difficult to couple a high voltage to the substrate of the NMOS device while high voltage is readily coupled to the N-well of a PMOS device. The proposed ESD clamp circuit can be applied efficiently to protect the ESD overstress between power rails.

Abstract translation: 提供了具有良好触发PMOS的新型ESD（静电放电）保护电路，用于电力轨道ESD保护。 在VDD和VSS电源线之间施加ESD电压的时间期间，PMOS器件连接在VDD和VSS电源线之间以维持ESD过应力电流。 在深亚微米CMOS p衬底技术中，ESD过应力控制的弱点通常与NMOS器件相关。 因此，本发明使用包含PMOS器件的电力 - 轨道ESD钳位电路。 应用栅极耦合和N阱触发技术，当电源线之间存在ESD过应力时，可以更有效地开启PMOS。 对于p衬底CMOS技术，难以将高电压耦合到NMOS器件的衬底，同时高电压容易地耦合到PMOS器件的N阱。 提出的ESD钳位电路可以有效地应用于保护电源轨之间的ESD过载。

公开(公告)号：US20070089041A1

公开(公告)日：2007-04-19

申请号：US11163398

申请日：2005-10-17

Applicant: Mau-Lin Wu

Inventor： Mau-Lin Wu

IPC: H03M13/00

CPC classification number: H04L1/0045 ,  H03M13/09 ,  H04L1/0052 ,  H04L1/0061 ,  H04L1/0072 ,  H04L1/1829

Abstract: A duplicate detection circuit for a receiver includes a CRC generator for generating a CRC value of frame header information, and a control circuit coupled to the CRC generator. The control circuit has a first output, a second output, and a control input. When the control input is not set, the control circuit outputs the CRC value at the first output. When the control input is set, the control circuit outputs the CRC value at the second output. A buffer has an input coupled to the first output of the control circuit. A compare circuit has an input coupled to an output of the buffer and another input coupled to the second output of the control circuit. The compare circuit compares a CRC value at the second output of the control circuit with a CRC value stored in the buffer, and outputs a duplicate indication when detecting a match.

Abstract translation: 用于接收机的重复检测电路包括用于产生帧头信息的CRC值的CRC发生器和耦合到CRC发生器的控制电路。 控制电路具有第一输出，第二输出和控制输入。 当控制输入未设定时，控制电路在第一个输出端输出CRC值。 当控制输入被设置时，控制电路在第二个输出端输出CRC值。 缓冲器具有耦合到控制电路的第一输出的输入。 比较电路具有耦合到缓冲器的输出和耦合到控制电路的第二输出的另一个输入的输入。 比较电路将控制电路的第二输出端的CRC值与存储在缓冲器中的CRC值进行比较，并在检测到匹配时输出重复指示。