公开(公告)号：US4090619A

公开(公告)日：1978-05-23

申请号：US713220

申请日：1976-08-10

Applicant: Minoru Higuchi ,  Tetuo Yamagata

Inventor： Minoru Higuchi ,  Tetuo Yamagata

IPC: B65G65/06 ,  B65G65/38

CPC classification number: B65G65/06

Abstract: A machine for scraping up grit which has a girder extending over grit chambers, an elevating frame parallel with the girder and adapted to rise and descend, a bucket conveyor stretched around sprocket wheels arranged at both ends of the elevating frame and at proper places above the girder, and a movable sprocket wheel, whereby scraping, scooping up and discharging of grit can be performed by the bucket conveyor.

Abstract translation: 一种用于刮擦砂粒的机器，其具有延伸在砂粒室上的梁，与该梁平行并适于上升和下降的升降框架;布置在升降框架两端的链轮周围的铲斗输送机， 大梁和可动链轮，由铲斗式输送机进行砂轮的刮除，铲起和卸料。

公开(公告)号：US20080084110A1

公开(公告)日：2008-04-10

申请号：US11901709

申请日：2007-09-18

Applicant: Kazuasa Suzuki ,  Minoru Higuchi ,  Yasuji Shibahata

Inventor： Kazuasa Suzuki ,  Minoru Higuchi ,  Yasuji Shibahata

IPC: B62D1/00 ,  B60T8/60 ,  B62D6/00

CPC classification number: B62D15/00 ,  B60T7/042 ,  B60T8/1755 ,  B60T2260/022 ,  B60T2260/06 ,  B60W30/045 ,  B62D1/046 ,  B62D1/06 ,  G05G1/44 ,  G05G1/483

Abstract: A rotatable grip (ancillary operation member) is provided on a part of a steering wheel body of a steering wheel (main operation member) for turning wheels. When the grip is rotated, a difference is generated between left and right wheels, and a yaw moment generated with this difference can assist or suppress the turning of a vehicle. Because the grip constitutes a part of the steering wheel body, it is possible to rotate the grip to assist or suppress the turning of the vehicle, while operating the steering wheel to turn the vehicle. Because both the steering wheel body and the grip can be operated by the same hand of a driver, operational burden on the driver is alleviated. Thus, it is possible to concurrently provide an excellent operability of the main operation member for controlling a kinetic state of the vehicle, and an excellent operability of the ancillary operation member for controlling the operation of a yaw moment generating device.

Abstract translation: 在转向轮的方向盘（主操作构件）的方向盘主体的一部分上设置有可旋转的手柄（辅助操作构件）。 当把手旋转时，在左右轮之间产生差异，并且由此产生的横摆力矩可以帮助或抑制车辆的转弯。 由于把手构成方向盘主体的一部分，所以能够旋转手柄以辅助或抑制车辆的转动，同时操作方向盘以转动车辆。 因为方向盘主体和把手可以通过驾驶员的同一只手操作，所以可以减轻驾驶员的操作负担。 因此，可以同时提供用于控制车辆的动态的主操作构件的优异的可操作性，以及用于控制横摆力矩发生装置的操作的辅助操作构件的优异的可操作性。

公开(公告)号：US20070131931A1

公开(公告)日：2007-06-14

申请号：US11633502

申请日：2006-12-05

Applicant: Minoru Higuchi

Inventor： Minoru Higuchi

IPC: H01L23/58

CPC classification number: H01L22/34 ,  H01L23/5228 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There is a room for improvement in conventional semiconductor devices in terms of reducing the chip area. A semiconductor device 1 comprises an evaluation transistor 10 (first characteristic evaluation device), an evaluation transistor (second characteristic evaluation device), measurement pads 30 (first measurement pads) and measurement pads 40 (second measurement pads). The measurement pad 30 and the measurement pad 40 are provided in different layers in the interconnect layer.

Abstract translation: 在减少芯片面积方面，在常规半导体器件中有改进的余地。 半导体器件1包括评估晶体管10（第一特性评估器件），评估晶体管（第二特性评估器件），测量焊盘30（第一测量焊盘）和测量焊盘40（第二测量焊盘）。 测量垫30和测量垫40在互连层中设置在不同的层中。

公开(公告)号：US20070056625A1

公开(公告)日：2007-03-15

申请号：US11519233

申请日：2006-09-12

Applicant: Minoru Higuchi ,  Masaru Hikosaka ,  Atsushi Nakauchi ,  Hiroyuki Oda ,  Shingo Okamoto

Inventor： Minoru Higuchi ,  Masaru Hikosaka ,  Atsushi Nakauchi ,  Hiroyuki Oda ,  Shingo Okamoto

IPC: H02N6/00

CPC classification number: B32B17/10036 ,  B32B17/10091 ,  B32B17/10788 ,  B32B17/10871 ,  F24S25/20 ,  H01L31/02013 ,  H01L31/048 ,  H02S30/10 ,  H02S40/34 ,  Y02E10/47 ,  Y02E10/50

Abstract: This invention provides a photovoltaic module for preventing insulation failure between an outer frame and connection leads. The photovoltaic module comprises: a photovoltaic submodule including a plurality of solar cells interposed between two light-transmitting substrates through the intermediary of an encapsulant and the connection leads extending from an edge between light-transmitting substrates and outputting generated electric currents; a terminal box attached near an edge of the photovoltaic submodule and housing connected parts between the connection leads and cables for outputting the electric currents to the outside; and an outer frame fitting over peripheral edges of the photovoltaic submodule. A side, of the light-receiving side light-transmitting substrate, from which the connection leads are pulled out, is made large so as to extend outward further than the other light-transmitting substrate. The connection leads are led out from the edge between the two light-transmitting substrates to be guided into the terminal box.

Abstract translation: 本发明提供一种用于防止外框与连接引线之间的绝缘故障的光伏组件。 光伏模块包括：光电子模块，其包括通过密封剂介于两个透光衬底之间的多个太阳能电池，以及从透光衬底之间的边缘延伸并输出产生的电流的连接引线; 附接在光伏子模块的边缘附近的接线盒，并且在连接引线和电缆之间容纳连接部分，用于将电流输出到外部; 以及外框架，其装配在光伏子模块的外围边缘上。 连接引线被拉出的光接收侧透光基板的一侧被制成较大，以比另一个透光基板更向外延伸。 连接引线从两个透光基板之间的边缘引出，以被引导到接线盒中。

公开(公告)号：US06646295B2

公开(公告)日：2003-11-11

申请号：US10074138

申请日：2002-02-12

Applicant: Minoru Higuchi

Inventor： Minoru Higuchi

IPC: H01L2976

CPC classification number: H01L21/823481 ,  H01L21/823418

Abstract: A semiconductor device including an insulated gate field effect transistor (IGFET) has been disclosed. The IGFET may be formed in an element region defined by an element isolation region (14) formed on a semiconductor substrate (8). A covering portion (10) may cover at least a portion of an end (22) of the element region. Covering portion (10) may be formed essentially of the same material as a side wall (10) of a gate (12) of the IGFET. A source/drain region (18) may be formed using gate (12) and covering portion (10) as a mask. In this way, a distance between an intra-substrate high-concentration contour line (20) and source/drain region (18) in area of end (22) of the element region may remain sufficient and an IGFET breakdown voltage may be improved.

Abstract translation: 已经公开了包括绝缘栅场效应晶体管（IGFET）的半导体器件。 IGFET可以形成在由形成在半导体衬底（8）上的元件隔离区域（14）限定的元件区域中。 覆盖部分（10）可以覆盖元件区域的端部（22）的至少一部分。 覆盖部分（10）可以基本上由与IGFET的栅极（12）的侧壁（10）相同的材料形成。 可以使用栅极（12）和覆盖部分（10）作为掩模来形成源极/漏极区域（18）。 以这种方式，在元件区域的端部（22）的区域中的基板间高浓度轮廓线（20）和源极/漏极区域（18）之间的距离可能保持足够，并且可以提高IGFET击穿电压。

公开(公告)号：US6144047A

公开(公告)日：2000-11-07

申请号：US14108

申请日：1998-01-27

Applicant: Minoru Higuchi

Inventor： Minoru Higuchi

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/78 ,  H01L29/74 ,  H01L29/76

CPC classification number: H01L21/76205 ,  H01L21/76213

Abstract: A semiconductor device is herein disclosed which comprises a plurality of element regions 50 formed on a first conductive type semiconductor substrate 60, element isolation regions 58 for isolating the element regions from each other, and gate electrodes 54 on parts of the element regions, the element regions being in contact with the element isolation regions at side surfaces 68 of the element regions, wherein in the element region under each gate electrode, the concentration of a first conductive type impurity is high in an element region top surface edge area (in the vicinity of 66), and on the side surfaces of each element region, except the portions under the gate electrode, the concentration of the first conductive type impurity is equal to or lower than that of the first conductive type impurity in the body of the element region.According to the present invention, in the semiconductor device having a trench isolation, the formation of a parasitic channel at element region top surface edges under a gate electrode can be prevented and a leak current in an OFF state can be reduced without any increase in a junction capacitance which retards the driving velocity of elements and without any increase in a junction leak current.

Abstract translation: 本文公开了一种半导体器件，其包括形成在第一导电类型半导体衬底60上的多个元件区域50，用于将元件区域彼此隔离的元件隔离区域58以及元件区域的部分上的栅极电极54 区域与元件区域的侧表面68处的元件隔离区域接触，其中在每个栅电极下方的元件区域中，元件区域顶表面边缘区域（附近）中第一导电类型杂质的浓度高 66），并且在除了栅电极下方的部分之外的每个元件区域的侧表面上，第一导电类型杂质的浓度等于或低于元件区域的主体中的第一导电类型杂质的浓度 。 根据本发明，在具有沟槽隔离的半导体器件中，可以防止在栅极电极下面的元件区域顶部表面边缘处形成寄生沟道，并且可以减小在OFF状态下的漏电流，而不会增加 结电容，其延迟元件的驱动速度并且没有任何增加的结漏电流。