公开(公告)号：US06063703A

公开(公告)日：2000-05-16

申请号：US81047

申请日：1998-05-19

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connecting holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，在绝缘膜上形成诸如TiN的下面的金属膜和连接孔的底壁和侧壁，通过CVD 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5973402A

公开(公告)日：1999-10-26

申请号：US791161

申请日：1997-01-30

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US5946799A

公开(公告)日：1999-09-07

申请号：US768557

申请日：1996-12-18

申请人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

发明人： Hiroshi Yamamoto ,  Tomohiro Ohta ,  Nobuyuki Takeyasu

IPC分类号： H01L23/522 ,  H01L23/532 ,  H01K3/10

CPC分类号： H01L21/76852 ,  H01L21/76885 ,  H01L23/5226 ,  H01L23/53223 ,  H01L2924/0002 ,  Y10T29/49126 ,  Y10T29/49165

摘要： In a multilevel interconnect structure for use in a semiconductor device including a lower metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting metal alloy film, an interlayer insulating film deposited on the lower metal wiring, a via hole formed in the interlayer insulating film, a plug made of aluminum or aluminum alloy and formed in the via hole, and an upper metal wiring having an aluminum or aluminum alloy film and a high melting point metal or high melting point metal alloy film, said plug is directly contacted with the aluminum or aluminum alloy film of at least one of the lower and upper metal wirings to decrease the via resistance without reducing the electromigration reliability. The plug is formed such that its top portion protrudes from the interlayer insulating film, the high melting point metal or high melting point metal alloy film of the upper metal wiring is formed, and then the top portion of the plug is removed together with a part of the high melting point metal or high melting point metal alloy film by a chemical mechanical polishing to expose an upper end of the plug. Then, the aluminum or aluminum alloy film of the upper metal wiring is formed to be brought into direct contact with the plug.

摘要翻译： 在用于包括具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的下金属布线的半导体器件的多电平互连结构中，沉积在下金属布线上的层间绝缘膜，通孔 形成在层间绝缘膜中的铝或铝合金制成的插塞，并形成在通孔中，以及具有铝或铝合金膜和高熔点金属或高熔点金属合金膜的上金属布线，所述插头 与下部和上部金属布线中的至少一个的铝或铝合金膜直接接触以降低通孔电阻而不降低电迁移可靠性。 插头形成为使其顶部从层间绝缘膜突出，形成上金属布线的高熔点金属或高熔点金属合金膜，然后将塞子的顶部与一部分 的高熔点金属或高熔点金属合金膜通过化学机械抛光以暴露插塞的上端。 然后，上金属布线的铝或铝合金膜形成为与插头直接接触。