公开(公告)号：US20120069545A1

公开(公告)日：2012-03-22

申请号：US13287631

申请日：2011-11-02

Applicant: Tae Young CHOI ,  Won Jin SON ,  Dong Nyung LIM ,  Jung Ha HWANG ,  Seung Yeon LEE ,  Cheon Joo KIM ,  Sung Ho KIM

Inventor： Tae Young CHOI ,  Won Jin SON ,  Dong Nyung LIM ,  Jung Ha HWANG ,  Seung Yeon LEE ,  Cheon Joo KIM ,  Sung Ho KIM

IPC: F21V29/00 ,  F21V9/16

CPC classification number: F21V29/74 ,  F21K9/23 ,  F21K9/232 ,  F21K9/238 ,  F21V3/00 ,  F21V19/0055 ,  F21V23/005 ,  F21V23/006 ,  F21V29/773 ,  F21V29/89 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/00 ,  F21Y2113/13 ,  F21Y2115/10

Abstract: A lighting device may be provided that includes a heat sink which includes one surface and a receiving recess; a light emitting module which is disposed on the one surface of the heat sink and includes a substrate and a plurality of light sources disposed on the substrate, wherein the substrate includes a hole and a plurality of via-holes; a power controller which includes an electrode pin electrically connected to the light emitting module through the via hole; and aninsulating inner case which receives the power controller therein and is disposed in the receiving recess of the heat sink, wherein the light sources include an lighting emitting diode.

Abstract translation: 可以提供一种照明装置，其包括散热器，该散热器包括一个表面和一个接收凹部; 发光模块，其设置在所述散热器的一个表面上，并且包括基板和设置在所述基板上的多个光源，其中所述基板包括孔和多个通孔; 功率控制器，其包括通过所述通孔电连接到所述发光模块的电极引脚; 以及在内部接收功率控制器并且设置在散热器的接收凹部中的绝缘内壳体，其中光源包括发光二极管。

公开(公告)号：US20100008130A1

公开(公告)日：2010-01-14

申请号：US12458411

申请日：2009-07-10

Applicant: Kwang-seok Kim ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Hyung-soon Shin ,  Seung-yeon Lee ,  Seung-jun Lee

Inventor： Kwang-seok Kim ,  Sun-ae Seo ,  Kee-won Kim ,  In-jun Hwang ,  Hyung-soon Shin ,  Seung-yeon Lee ,  Seung-jun Lee

IPC: G11C11/00 ,  G11C7/00 ,  G11C11/14

CPC classification number: G11C11/16 ,  G11C11/1659 ,  G11C11/1675

Abstract: Provided is a method of operating a magnetic random access memory device comprising a switch structure and a magnetoresistance structure. According to the method, current variation depending on the direction of the current can be reduced by controlling a gate voltage of the switch structure when supplying current to write data to the magnetoresistance structure.

Abstract translation: 提供了一种操作包括开关结构和磁阻结构的磁性随机存取存储器件的方法。 根据该方法，当向磁阻结构写入数据时，通过控制开关结构的栅极电压可以减小依赖于电流方向的电流变化。