-
公开(公告)号：US20100175612A1
公开(公告)日：2010-07-15
申请号：US12684284
申请日：2010-01-08
IPC分类号： C30B15/04
摘要： To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.
摘要翻译： 即使在生长硅锭的直体部分的同时在熔体中添加所需量的掺杂剂，也可以提供能够减少位错引入的硅单晶的制造方法。 在根据本发明的硅单晶的制造方法中，包括掺杂剂添加步骤，当在单晶生长的生长步骤中生长硅单晶的生长步骤期间，在硅单晶的直体部分生长步骤期间，向熔体中添加掺杂剂， 将晶种浸入硅熔体中，然后从其中拉出晶种，在掺杂剂添加步骤中，在开始时计算熔体的剩余质量，掺杂剂以0.01至0.035的速率加入到熔体中 g / min·kg / min / 1kg计算的熔体剩余质量。
-
12.发明申请公开(公告)号：US20100133485A1
公开(公告)日：2010-06-03
申请号：US12524303
申请日：2008-05-23
CPC分类号： C30B29/06 , C30B15/04 , C30B15/203
摘要： In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm3); an average temperature gradient of the grown monocrystal is represented by Gave(K/mm); a pulling-up speed is represented by V (mm/min); and a coefficient corresponding to a kind of the dopant is represented by A. By growing the silicon monocrystal under a condition shown in the left to a critical line G1, occurrence of abnormal growth due to compositional supercooling can be prevented. Gave V > A · C - 43 ( 1 )
摘要翻译： 在通过Czochralski法从添加有N型掺杂剂的硅熔体生长硅单晶的过程中，使单晶生长使得满足如下的式（1）所示的关系。 在式（1）中：硅熔体中的掺杂剂浓度由C（原子/ cm3）表示; 生长的单晶的平均温度梯度由Gave（K / mm）表示; 拉伸速度由V（mm / min）表示; 并且与掺杂剂的种类相对应的系数由A表示。通过在左侧所示的条件下将硅单晶生长至临界线G1，可以防止由组成过冷而引起的异常生长的发生。 Gave V> A·C - 43（1）
-
公开(公告)号：US20100050931A1
公开(公告)日：2010-03-04
申请号：US12515730
申请日：2008-05-07
申请人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
发明人： Yasuhito Narushima , Shinichi Kawazoe , Fukuo Ogawa , Tsuneaki Tomonaga , Yasuyuki Ohta , Toshimichi Kubota , Shinsuke Nishihara
IPC分类号： C30B15/00
CPC分类号： C30B15/02 , C30B29/06 , Y10T117/1032 , Y10T117/1072
摘要： Using a pulling-up apparatus, an oxygen concentration of the monocrystal at a predetermined position in a pulling-up direction is controlled based on a relationship in which the oxygen concentration of the monocrystal is decreased as a flow rate of the inactive gas at a position directly above a free surface of the dopant-added melt is increased when the monocrystal is manufactured with a gas flow volume in the chamber being in the range of 40 L/min to 400 L/min and an inner pressure in the chamber being in the range of 5332 Pa to 79980 Pa. Based on the relationship, oxygen concentration is elevated to manufacture the monocrystal having a desirable oxygen concentration. Because the oxygen concentration is controlled under a condition corresponding to a condition where the gas flow rate is rather slow, the difference between a desirable oxygen concentration profile of the monocrystal and an actual oxygen concentration profile is reduced.
摘要翻译： 使用提拉装置，基于在单位的氧浓度作为位置处的惰性气体的流量减小的关系来控制单体在提升方向上的预定位置的氧浓度 当制造单晶体时，在腔室中的气体流动体积在40L / min至400L / min的范围内，并且腔室中的内部压力在 范围为5332Pa〜79980Pa。根据该关系，提高氧浓度，制造具有所需氧浓度的单晶。 由于氧浓度在与气体流量比较慢的条件相对应的条件下进行控制，所以单晶的理想的氧浓度分布与实际的氧浓度分布之间的差减小。
-
14.发明授权公开(公告)号：US10294583B2
公开(公告)日：2019-05-21
申请号：US12597116
申请日：2008-04-23
摘要： The sublimation speed of dopant can be precisely controlled without being influenced by a change over time of intra-furnace thermal environment. A dopant supply unit equipped with an accommodation chamber and a supply tube is provided. A sublimable dopant is accommodated. Upon sublimation of the dopant within the accommodation chamber, the sublimed dopant is introduced into a melt. The dopant within the accommodation chamber of the dopant supply unit is heated. The amount of heating by means of heating means is controlled so as to sublime the dopant at a desired sublimation speed. The dopant is supplied to the melt so that the dopant concentration until the first half of a straight body portion of the silicon single crystal is in the state of low concentration or non-addition. After the first half of the straight body portion of the silicon single crystal is formed, the dopant is supplied to the melt so that every portion of the crystal is in the state where the dopant is added to a desired high concentration.
-
公开(公告)号：US09212431B2
公开(公告)日：2015-12-15
申请号：US11863894
申请日：2007-09-28
CPC分类号： C30B15/00 , C30B11/003 , C30B15/14 , C30B29/06 , C30B35/00 , Y10T117/1024 , Y10T117/1032 , Y10T117/1068
摘要： A graphite member utilized in a pulling device for pulling a silicon single crystal is provided. An edge part of the graphite member is rounded off which is exposed to a reactive gas. The graphite member may comprise: a plate part having a thickness of ‘t’ wherein a curvature radius of ‘r’ satisfies the formula: t/8≦r≦t/4.
摘要翻译： 提供了用于牵引单晶硅的牵引装置中的石墨部件。 石墨构件的边缘部分被倒圆，其暴露于反应性气体。 石墨构件可以包括：具有“t”厚度的板部分，其中曲率半径'r'满足公式：t / 8＆nlE; r＆nlE; t / 4。
-
16.发明授权Doping apparatus for simultaneously injecting two dopants into a semiconductor melt at different positions and method for manufacturing silicon single crystal using the doping apparatus 有权用于在不同位置同时将两种掺杂剂注入到半导体熔体中的掺杂装置和使用掺杂装置制造单晶硅的方法公开(公告)号：US08715416B2
公开(公告)日：2014-05-06
申请号：US12524331
申请日：2008-05-23
IPC分类号： C30B15/04
摘要： A doping device includes a first dopant accommodating portion including an opening on an upper portion to accommodate a first dopant that is evaporated near a surface of a semiconductor melt; a second dopant accommodating portion including a dopant holder that holds a second dopant that is liquefied near the surface of the semiconductor melt while including a communicating hole for delivering the liquefied dopant downwardly, and a conduit tube provided on a lower portion of the dopant holder for delivering the liquefied dopant flowed from the communicating hole to the surface of the semiconductor melt; and a guide provided by a cylinder body of which a lower end is opened and an upper end is closed for guiding dopant gas generated by evaporation of the first dopant to the surface of the semiconductor melt.
摘要翻译： 掺杂装置包括第一掺杂剂容纳部分，其包括在上部的开口，以容纳在半导体熔体的表面附近蒸发的第一掺杂剂; 第二掺杂剂容纳部分，其包括掺杂剂保持器，所述掺杂剂保持器保持在半导体熔体的表面附近液化的第二掺杂剂，同时包括用于向下输送液化掺杂剂的连通孔，以及设置在掺杂剂保持器的下部的导管， 将从所述连通孔流出的液化掺杂剂输送到所述半导体熔体的表面; 以及由其下端打开并且上端封闭的筒体提供的引导件，用于将由第一掺杂剂的蒸发产生的掺杂剂气体引导到半导体熔体的表面。
-
公开(公告)号：US08283241B2
公开(公告)日：2012-10-09
申请号：US12600885
申请日：2008-05-23
IPC分类号： H01L21/04
摘要： A dopant device includes: a dopant holder that holds Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including a communicating hole for delivering the liquefied Ge downwardly; a cover portion for covering the Ge held by the dopant holder; and a vent provided on the cover portion for communicating with the outside. A dopant injecting method is carried out using such a dopant device, the dopant injecting method including: loading Ge dopant in a solid state into the doping device; liquefying the solid Ge dopant loaded into the doping device while holding the doping device at a predetermined height from a surface of a semiconductor melt; and doping the semiconductor melt with the liquefied Ge that is flowed from the communicating hole.
摘要翻译： 掺杂剂装置包括：掺杂剂保持器，其保持在常温下为固体的Ge，并使靠近半导体熔体表面的Ge液化，掺杂剂保持器包括用于向下输送液化Ge的连通孔; 用于覆盖由掺杂剂保持器保持的Ge的覆盖部分; 以及设置在盖部分上用于与外部连通的通风口。 使用这种掺杂剂器件进行掺杂剂注入方法，所述掺杂剂注入方法包括：将固态的Ge掺杂剂加载到掺杂器件中; 液化固体掺杂掺杂器件中的Ge掺杂剂，同时将掺杂器件保持在距离半导体熔体表面的预定高度; 并且与从连通孔流出的液化Ge掺杂半导体熔体。
-
18.发明申请公开(公告)号：US20110140241A1
公开(公告)日：2011-06-16
申请号：US13057612
申请日：2009-08-11
摘要： A process for production of a silicon ingot, by which a silicon ingot exhibiting a low resistivity even in the top portion can be produced. The process for the production of a silicon ingot comprises includes withdrawing a silicon seed crystal (13) from a silicon melt (11) to grow a silicon single crystal (12), with the silicon seed crystal (13) and the silicon melt (11) containing dopants of the same kind. The process comprises includes the dipping step of dipping a silicon seed crystal (13) containing a dopant in a specific concentration in a silicon melt (11) in such a manner that the temperature difference between both falls within the range of 50 to 97K, and the growing step of growing a silicon single crystal (12) withdrawn after the dipping to form a silicon ingot, the growing step being conducted by using a single crystal puller provided with a thermal shield plate (22) for shielding against radiant heat emitted from the silicon melt (11) and controlling the distance between the thermal shield plate (22) and the silicon melt (11) within a specific range.
摘要翻译： 制造硅锭的方法，通过该方法可以制造出在顶部具有低电阻率的硅锭。 制造硅锭的方法包括：将硅晶种（13）从硅熔体（11）中取出以与硅晶种（13）和硅熔体（11）一起生长硅单晶（12） ）含有相同种类的掺杂剂。 该方法包括：浸渍步骤，将含有特定浓度的掺杂剂的硅晶种（13）浸渍在硅熔体（11）中，使得两者之间的温差落在50至97K的范围内，以及 在浸渍之后生长硅单晶（12）生长步骤以形成硅锭，生长步骤是通过使用设置有热屏蔽板（22）的单晶拉拔器进行的，用于屏蔽从 硅熔体（11），并且在特定范围内控制热屏蔽板（22）和硅熔体（11）之间的距离。
-
公开(公告)号：US20110120367A1
公开(公告)日：2011-05-26
申请号：US13056017
申请日：2009-07-28
IPC分类号： C30B15/14
CPC分类号： C30B15/04 , Y10T117/10 , Y10T117/1004 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A silicon single crystal pull-up apparatus includes a pull-up furnace, a sample chamber in which a sublimable dopant is housed, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, a raising and lowering means for raising and lowering the sample tube, a supply pipe which is installed inside the pull-up furnace and supplies the sublimable dopant to a melt, and a connection means for connecting the sample tube and the supply pipe. The connection means is constructed from a ball joint structure comprising a convex member which projects from one end of the sample tube and a concave member which is provided at one end of the supply pipe and is formed to be engageable with the convex member. The contact surfaces of the convex member and the concave member are formed to be curved surfaces.
摘要翻译： 硅单晶上拉装置包括上拉炉，容纳可升华掺杂剂的样品室，可在样品室内部和上拉内部之间升高和降低的样品管 炉，用于升高和降低样品管的升降装置，安装在上拉炉内部并将升华性掺杂剂供应给熔体的供应管，以及用于连接样品管和供给管的连接装置。 连接装置由包括从样品管的一端突出的凸起构件和设置在供给管的一端形成为可与凸部构件接合的凹部构件的球接头结构构成。 凸部件和凹部件的接触表面形成为弯曲表面。
-
公开(公告)号：US20100151667A1
公开(公告)日：2010-06-17
申请号：US12600885
申请日：2008-05-23
IPC分类号： H01L21/22
摘要： A dopant device includes: a dopant holder that holds Ge which is solid at normal temperature and liquefies the Ge near a surface of the semiconductor melt, the dopant holder including a communicating hole for delivering the liquefied Ge downwardly; a cover portion for covering the Ge held by the dopant holder; and a vent provided on the cover portion for communicating with the outside. A dopant injecting method is carried out using such a dopant device, the dopant injecting method including: loading Ge dopant in a solid state into the doping device; liquefying the solid Ge dopant loaded into the doping device while holding the doping device at a predetermined height from a surface of a semiconductor melt; and doping the semiconductor melt with the liquefied Ge that is flowed from the communicating hole.
摘要翻译： 掺杂剂装置包括：掺杂剂保持器，其保持在常温下为固体的Ge，并使靠近半导体熔体表面的Ge液化，掺杂剂保持器包括用于向下输送液化Ge的连通孔; 用于覆盖由掺杂剂保持器保持的Ge的覆盖部分; 以及设置在盖部分上用于与外部连通的通风口。 使用这种掺杂剂器件进行掺杂剂注入方法，所述掺杂剂注入方法包括：将固态的Ge掺杂剂加载到掺杂器件中; 液化固体掺杂掺杂器件中的Ge掺杂剂，同时将掺杂器件保持在距离半导体熔体表面的预定高度; 并且与从连通孔流出的液化Ge掺杂半导体熔体。
-
-
-
-
-
-
-
-
-
搜索结果
30 条记录 (耗时 0.024 秒)
