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公开(公告)号：US20100175612A1
公开(公告)日：2010-07-15
申请号：US12684284
申请日：2010-01-08
IPC分类号： C30B15/04
摘要： To provide a manufacturing method for a silicon single crystal that can reduce introduction of dislocation thereinto even if a required amount of dopant is added to a melt while growing a straight body portion of a silicon ingot. In a manufacturing method for a silicon single crystal according to the present invention that includes a dopant addition step of adding a dopant to a melt while a straight body portion of a silicon single crystal is growing in a growth step of growing the silicon single crystal by dipping a seed crystal into a silicon melt and then pulling the seed crystal therefrom, in the dopant addition step, a remaining mass of the melt is calculated at the beginning thereof, and the dopant is added to the melt at a rate of 0.01 to 0.035 g/min·kg per minute per 1 kg of the calculated remaining mass of the melt.
摘要翻译： 即使在生长硅锭的直体部分的同时在熔体中添加所需量的掺杂剂，也可以提供能够减少位错引入的硅单晶的制造方法。 在根据本发明的硅单晶的制造方法中，包括掺杂剂添加步骤，当在单晶生长的生长步骤中生长硅单晶的生长步骤期间，在硅单晶的直体部分生长步骤期间，向熔体中添加掺杂剂， 将晶种浸入硅熔体中，然后从其中拉出晶种，在掺杂剂添加步骤中，在开始时计算熔体的剩余质量，掺杂剂以0.01至0.035的速率加入到熔体中 g / min·kg / min / 1kg计算的熔体剩余质量。
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公开(公告)号：US20110114011A1
公开(公告)日：2011-05-19
申请号：US12944141
申请日：2010-11-11
IPC分类号： C30B15/02
CPC分类号： C30B15/04 , C30B15/20 , C30B29/06 , Y10T117/1052
摘要： The present invention provides a method of producing low-resistivity silicon single crystal containing a dopant at a relatively high concentration by adding a large amount of the dopant to silicon melt when the silicon single crystal is pulled up, with suppressing occurrence of dislocation in the crystal. Specifically, the present invention provides a method of manufacturing silicon single crystal by bringing silicon seed crystal into contact with silicon melt and pulling up the silicon seed crystal while rotating the crystal to grow silicon single crystal whose straight body section has a diameter of φ mm below the silicon seed crystal, the method comprising: the dopant-adding step of adding a dopant to the silicon melt during growth of the straight body section of the silicon single crystal, while rotating the silicon single crystal at a rotational speed of ω rpm (where ω≧24−(φ/25)).
摘要翻译： 本发明提供了一种通过在硅单晶被拉起时向硅熔体中添加大量掺杂剂而在较高浓度下生产含有掺杂剂的低电阻率硅单晶的方法，同时抑制晶体中位错的发生 。 具体地，本发明提供一种通过使硅晶种与硅熔体接触并提取硅晶种同时旋转晶体来生长直体部分具有直径为＆phgr的硅单晶的方法， 该方法包括：掺杂剂添加步骤，在硅单晶的直体部分的生长过程中向硅熔体中添加掺杂剂，同时以ωrpm的转速旋转硅单晶 （其中ω≥24-（＆phgr / 25））。
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3.发明申请公开(公告)号：US20110259260A1
公开(公告)日：2011-10-27
申请号：US13083768
申请日：2011-04-11
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20 , C30B15/26 , C30B35/00 , Y10T117/1068
摘要： A silicon single crystal pull-up apparatus is provided with a chamber into which an inert gas is introduced; a crucible that supports a silicon melt within the chamber; a heater that heats the silicon melt in the crucible; a lifting device for lifting and lowering the crucible; a thermal radiation shield disposed above the crucible; a cylindrical purging tube that is provided inside the thermal radiation shield so as to straighten the inert gas; a CCD camera that photographs the mirror image of the thermal radiation shield reflected on the liquid surface of the silicon melt through the purging tube; a liquid surface level calculator that calculates the liquid surface level of the silicon melt from the position of the mirror image photographed by the camera; and a conversion table creator that creates a conversion table representing a relationship between the liquid surface level of the silicon melt and the mirror image position obtained. The liquid surface level calculator calculates the liquid surface level based on the conversion table.
摘要翻译： 硅单晶上拉装置设置有引入惰性气体的室; 在所述室内支撑硅熔体的坩埚; 加热器，其加热坩埚中的硅熔体; 用于提升和降低坩埚的提升装置; 设置在坩埚上方的热辐射屏蔽; 圆柱形清洗管，设置在热辐射屏蔽内部以使惰性气体变直; CCD摄像机，其通过清洗管照射在硅熔体的液面上反射的热辐射屏蔽的镜像; 液面计算器，用于从由照相机拍摄的镜像位置计算出硅熔体的液面; 以及转换表创建器，其创建表示硅熔体的液面与所获得的镜像位置之间的关系的转换表。 液面计算器根据转换表计算液面水平。
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