Abstract:
Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically connected to the circuitry, and a contact plug at a pixel border that may be electrically connected with the circuitry and the photodiode. According to embodiments, the photodiode may include a first conductive type ion implantation region selectively provided in a crystalline semiconductor layer, and a second conductive type ion implantation region in contact with one side surface of the first conductive type ion implantation region.
Abstract:
Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conductive layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.
Abstract:
An image sensor and a method for manufacturing the same are provided. The image sensor can include a semiconductor substrate, an interlayer dielectric, a second doped layer, a first doped layer, an ohmic contact layer, and metal contacts. The semiconductor substrate can have a pixel region and a peripheral region defined therein. The second doped layer, the first doped layer, and the ohmic contact layer can be stacked on the interlayer dielectric of the semiconductor substrate to form an image sensing device in the pixel region.
Abstract:
Provided are an image sensor and a method for manufacturing the same. The image sensor comprises a semiconductor substrate, an interconnection and an interlayer dielectric, a lower electrode layer, an image sensing device, a first via hole, a barrier pattern, a second via hole, and a metal contact. The semiconductor substrate comprises a readout circuitry. The interconnection and the interlayer dielectric are formed on the semiconductor substrate. The lower electrode layer is disposed over the interlayer dielectric. The image sensing device is disposed on the lower electrode layer. The first via hole is formed through the image sensing device. The barrier pattern is formed on a sidewall of the first via hole. The second via hole is formed through the lower electrode layer and the interlayer dielectric under the first via hole. The metal contact is formed in the first and second via holes.
Abstract:
An image heating apparatus includes a pressure roller, a belting film to circulate while partially connecting with the pressure roller, a support member to be provided in the belting film and comprises a guide to guide the circulating of the belting film, a nip spring to comprise a nip portion to form a nip between the belting film and the pressure roller, and a support portion to support the nip portion against the support member, and a heater to be provided adjacent to the nip spring and transfer heat to the image through the belting film.
Abstract:
A fixing unit which enables high-speed operation and miniaturization, and an image forming apparatus having the fixing unit, includes a heating member which is heated by a heat source, the heating member having a predetermined width; a rotating member to rotate in contact with the heating member; a driving member to rotate the rotating member; and a pressing member to press both sides of the heating member towards the driving member and to form a predetermined fixing nip between the rotating member and the driving member, wherein the heating member has a second moment of inertia which is set to maintain a fixing efficiency of 90% or more in a central portion of the heating member.
Abstract:
A substrate surface processing apparatus is provided. In the substrate surface processing apparatus, a spin chuck holds a substrate thereon by suction, spins the substrate, and moves up and down the substrate. An upper bowl and a lower bowl surround the spin chuck for receiving a processing solution by which the surface of the substrate is processed. An air outlet is positioned under the lower bowl for exhausting air from the upper and lower bowls. A flow separation protrusion is formed within the upper bowl. It separates an air flow around the substrate into an upward air flow and a downward air flow and exhausts the downward air flow through the air outlet.
Abstract:
An image forming apparatus that is capable of preventing a damage to a fusing belt or hazardous conditions due to the overheating of the fusing belt and a fusing device thereof are disclosed. The image forming apparatus has a fusing device including a fusing belt, a heat source disposed in the fusing belt, a support member to support the fusing belt, the support member having an opening through which heat emitted from the heat source passes to at least a portion of the fusing belt, and a first temperature sensor positioned to measure temperature of the fusing belt at the portion directly heated by radiant heat transmitted through the opening. A control unit of the image forming apparatus controls the heat source based on the temperature measured by the first temperature sensor.
Abstract:
Provided is an image sensor and a method for manufacturing the same. The image sensor includes a substrate on which a circuitry including a first lower metal line and a second lower metal line is formed. A lower electrode is formed on the first lower metal line. A separation metal pattern surrounds the lower electrode and connected to the second lower metal line. An intrinsic layer is formed on the lower electrode. A second conductive type conduction layer is formed on the intrinsic layer. An upper electrode is formed on the second conductive type conduction layer. A bias can be applied to the second lower metal line such that the separation metal pattern can provide a Schottky Barrier, directing electrons to the lower electrode and inhibiting crosstalk between pixels.
Abstract:
A fusing device includes a rotatable pressing roller, a fusing belt to rotate by a rotational force transmitted from the rotatable pressing roller, a nip forming member to contact an inner surface of the fusing belt to form a nip on a contact area between the rotatable pressing roller and the fusing belt, a heating member formed in approximately an internal central portion of the fusing belt to heat the nip forming member and the fusing belt, an inner support member formed within the fusing belt to press a nip part of the nip forming member toward the rotatable pressing roller, and an outer support member formed outside the fusing belt, and both ends of the outer support member being engaged with the inner support member to thereby reinforce the strength of the inner support member and form a path for radiation heat to disperse. The support unit includes an inner support member placed within the belt unit, and an outer support member placed outside the belt unit, both ends of the outer support member being engaged with the inner support member to reinforce the strength of the inner support member and to form a path for a radiation heat to disperse.