公开(公告)号：US06218280B1

公开(公告)日：2001-04-17

申请号：US09336286

申请日：1999-06-18

Applicant: Olga Kryliouk ,  Tim Anderson ,  Bruce Chai

Inventor： Olga Kryliouk ,  Tim Anderson ,  Bruce Chai

IPC: H01L3300

CPC classification number: C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  C30B29/60 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L33/007 ,  H01S5/0218 ,  H01S5/32341

Abstract: The subject invention pertains to a method and device for producing large area single crystalline III-V nitride compound semiconductor substrates with a composition AlxInyGal-x-y N (where O≦x≦1, 0≦y≦1, and 0≦x+y≦1). In a specific embodiment, GaN substrates, with low dislocation densities (˜107 cm2) can be produced. These crystalline III-V substrates can be used to fabricate lasers and transistors. Large area free standing single crystals of III-V compounds, for example GaN, can be produced in accordance with the subject invention. By utilizing the rapid growth rates afforded by hydride vapor phase epitaxy (HVPE) and growing on lattice matching orthorhombic structure oxide substrates, good quality III-V crystals can be grown. Examples of oxide substrates include LiGaO2, LiAlO2, MgAlScO4, Al2MgO4, and LiNdO2. The subject invention relates to a method and apparatus, for the deposition of III-V compounds, which can alternate between MOVPE and HVPE, combining the advantages of both. In particular, the subject hybrid reactor can go back and forth between MOVPE and HVPE in situ so that the substrate does not have to be transported between reactor apparatus and, therefore, cooled between the performance of different growth techniques.

Abstract translation: 本发明涉及一种用于生产具有组成Al x In y Ga 1-x N（其中O 1 = x 1 = 0,0 = y 1 = 0）的大面积单晶III-V族氮化物半导体衬底的方法和装置， = x + y <= 1）。 在具体实施方案中，可以生产具有低位错密度（〜107cm 2）的GaN衬底。 这些晶体III-V衬底可用于制造激光器和晶体管。 根据本发明可以制备III-V族化合物的大面积自立单晶，例如GaN。 通过利用由氢化物气相外延（HVPE）提供的快速生长速率并在晶格匹配正交结构氧化物衬底上生长，可以生长出优质的III-V晶体。 氧化物基板的实例包括LiGaO 2，LiAlO 2，MgAlScO 4，Al 2 MgO 4和LiNdO 2。 本发明涉及用于沉积III-V化合物的方法和装置，其可以在MOVPE和HVPE之间交替，结合两者的优点。 特别地，目标混合反应器可以在MOVPE和HVPE之间来回地进行原位处理，使得基板不必在反应器装置之间传输，因此在不同生长技术的性能之间进行冷却。

公开(公告)号：US20080161188A1

公开(公告)日：2008-07-03

申请号：US11937563

申请日：2007-11-09

Applicant: TIM ANDERSON ,  Jianhua Mao

Inventor： TIM ANDERSON ,  Jianhua Mao

IPC: A01N57/20 ,  A01P13/00

CPC classification number: A01N57/20 ,  A01N37/02 ,  A01N37/04 ,  A01N2300/00

Abstract: An herbicidal composition which comprises a mixture of an herbicide and a C2-C5 mono- or dicarboxylic acid additive, and mixtures of additives thereof, wherein the composition is more effective in providing a faster-acting herbicidal effect than the herbicide alone is described. A method of controlling weed growth with the herbicidal composition is also described.

Abstract translation: 一种除草组合物，其包含除草剂和C 2 -C 5 - 单 - 或二羧酸添加剂的混合物及其添加剂的混合物，其中所述组合物更有效 在提供比单独的除草剂更快的除草效果。 还描述了用除草组合物控制杂草生长的方法。