Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.
Abstract:
An image sensor includes a plurality of pixels for capturing an image; a sample and hold circuit array having a plurality of units for receiving signals from the plurality of pixels representing the captured image; a decoder for selecting each of the units of the sample and hold circuit array for output; and a delay circuit that includes an adjustable time delay to the decoder for compensating for time delays.
Abstract:
A CMOS image sensor includes a plurality of pixels arranged in an array; a plurality of sample and hold arrays; and a routing matrix which routes a signal from each pixel to one of the sample and hold arrays in a predetermined order.
Abstract:
An image sensor includes a plurality of photo-sensitive elements arranged in an array in which each photo-sensitive element converts incident light into a charge packet; a charge-to-voltage converter that receives each charge packet and converts the charge packet into a voltage; a voltage-to-frequency converter that receives each voltage and converts the voltage into a signal having a frequency; and a frequency-to-digital signal converter that receives each signal having the frequency and converts the signal having the frequency into a digital signal.
Abstract:
A method for outputting signals from dark reference pixels, the method includes the steps of transferring signals from dark reference pixels that are shielded from light to a plurality of storage circuit elements; and transferring signals substantially simultaneously from each of the plurality of storage circuit elements to an operational amplifier on one clock cycle which operational amplifier averages all the signals from the sample and hold circuits for providing an approximate average dark reference signal.
Abstract:
An image sensor includes a plurality of pixels for capturing incident light that is converted to a signal representing an image; wherein noise is combined with a signal representing both the image and a reset level; a plurality of dark reference pixels that generate noise that substantially correspond or equally correspond to the noise in the image and reset level; and a sample and hold circuit that reads out the image signal and cancels or substantially cancels out the noise from the image signal and reset level by canceling the noise from image and reset level with the noise generated from the dark reference pixels.
Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring all or a portion of the charge from the photosensitive region; a voltage supply having an increasing voltage over time that is applied to the transfer gate; a floating diffusion for receiving the all or a portion of the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a pulse detector for detecting a voltage pulse from the amplifier; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the detector which indicates initiation of charge transfer from the photosensitive region to the floating diffusion.
Abstract:
An image sensor includes a photosensitive region that accumulates charge corresponding to received incident light; a transfer gate for transferring charge from the photosensitive region; a voltage supply having an increasing voltage over time; a floating diffusion for receiving the charge from the photosensitive region and converting the charge to a voltage; an amplifier for receiving and amplifying a signal from the floating diffusion; a comparator for comparing a voltage from the amplifier to a reference voltage; and a counter for counting clock cycles between initiation of the increasing voltage until a signal is received from the comparator indicating charge transfer from the photosensitive region to the floating diffusion; wherein a digital signal is generated that represents an unfilled capacity of the photosensitive region.
Abstract:
A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.
Abstract:
A CMOS image sensor includes a plurality of pixels defining an imaging area each pixel includes a photosensitive area that converts incident light into a charge; a first transistor having a transfer gate that transfers charge from the photosensitive area to a charge-to-voltage region; a second transistor that resets the voltage of the charge-to-voltage region; a third transistor that amplifies voltage from the charge-to-voltage region; and a select mechanism positioned outside the imaging area on the image sensor that selects a predefined number of pixels for readout from the third transistor.