Abstract:
A display system including a first set of conductive electrodes, a second set of conductive electrodes, and a display medium. The first set of conductive electrodes is configured to receive a selection signal. The second set of conductive electrodes is configured to interact with the first set of conductive electrodes for activating the reading or writing of display data. The second set of conductive electrodes is configured to receive a data signal and to activate the reading or writing of a target area of the display device, in response to the selection signal to the first set of conductive electrodes and the data signal to the second set of conductive electrodes. The display medium is movably coupled with the first and second sets of conductive electrodes. One or both of the first and the second sets of conductive electrodes have at least two electrically independent regions having an independent signal input for each region.
Abstract:
A method and a device for forming a poly-silicon film, using sequential lateral solidification (SLS) by laser irradiation through an optical device to pattern the laser beam so as to lengthen the crystalline grains and enhance the throughput. The optical device comprises a plurality of first transparent regions, a plurality of second transparent regions and a plurality of final transparent regions. The plurality of second transparent regions are disposed between the plurality of first transparent regions and the plurality of final transparent regions. The first transparent regions and the second transparent regions have a first width W1 and a first length L1, and the final transparent regions have a second width W2 and a second length L2. An mth first transparent region of the plurality of first transparent regions and an mth second transparent region of the plurality of second transparent regions are arranged in a tier-shape. An mth final transparent region of the plurality of final transparent regions is extended from the mth second transparent region of the plurality of second transparent regions.
Abstract:
A method of fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a patterned heat retaining layer over the amorphous silicon layer, doping the amorphous silicon layer to form a pair of doped regions in the amorphous silicon layer by using the patterned heat retaining layer as a mask, and irradiating the amorphous silicon layer to activate the pair of doped regions, forming a pair of activated regions, and form a crystallized region between the pair of activated regions.
Abstract:
A silicon layer and a heat-retaining layer are formed on a substrate in turn, and a laser beam with a sharp energy density gradient is next utilized to perform a laser heating process for inducing super lateral growth crystallization occurred in part of the Si layer. The heat-retaining layer provides additional heating-enhancement function for the Si layer in crystallization so as to increase the super lateral growth length. Then, the laser beam is repeatedly moved to irradiate the substrate to finish the crystallization process for the full substrate.
Abstract:
A tire parameter sensing system (12) for a vehicle (10) comprises a vehicle-based unit (42) for receiving parameter signals. A tire-based unit (34) is associated with a tire (16) of the vehicle (10) and rotates with the tire (16). The tire-based unit (34) is located in a communication zone (134) for communicating with the vehicle-based unit (42) through only a portion of each rotation of the tire (16). The tire-based unit (34) is configured to sense a parameter of the tire (16) and to transmit a parameter signal (54) indicative thereof. The system (12) also comprises means (78) for monitoring the rotation of the tire and for providing rotation information indicative of the monitored tire rotation. The tire-based unit (34) is responsive to the rotation information for transmitting the parameter signal (54) while the tire-based unit (34) is located the communication zone (134).
Abstract:
A tire parameter sensing system (12) for a vehicle (10) having a tire (16) comprises a tire-based unit (26) associated with the tire (16) and including structure (70, 72) for sensing a parameter of the tire (16) and for transmitting a parameter signal (38) indicative of the sensed parameter. The parameter signal (38) having at least first and second different signal characteristics. The tire parameter sensing system (12) also comprises a vehicle-based unit (34) having a first receiving channel (116) for receiving at least portions of the parameter signal (38) that include the first signal characteristic and a second receiving channel (118) for receiving at least portions of the parameter signal (38) that include the second signal characteristic. A signal detection portion (120) of the vehicle-based unit (34) is responsive to the first and second signal characteristics for determining the sensed parameter of the tire (16).
Abstract:
A tire parameter sensing system (12) comprises a tire-based unit (28) associated with a tire (20) of a vehicle (10) for sensing a parameter of the tire (20) and for transmitting a tire parameter signal (42) indicative of the sensed parameter. A transceiver device (34) receives the tire parameter signal (42) and transmits a relay signal (42′) indicative of the received tire parameter signal (42). A vehicle-based unit (32) is adapted to receive both the tire parameter signal (42) and the relay signal (42′). An indicator (54) is coupled to the vehicle-based unit (32) for providing an indication of the sensed parameter of the tire (20). The vehicle-based unit (32) controls the indicator (54) in response to receiving at least one of the tire parameter signal (42) and the relay signal (42′).
Abstract:
A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the heat sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.
Abstract:
Methods and apparatus for controlling the temperature of a substrate during processing are provided herein. In some embodiments, an apparatus for retaining and controlling substrate temperature may include a puck of dielectric material; an electrode disposed in the puck proximate a surface of the puck upon which a substrate is to be retained; and a plurality of heater elements disposed in the puck and arranged in concentric rings to provide independent temperature control zones.
Abstract:
Embodiments of the present invention provide chamber components having a protective element for shielding bonding material from processing environments in a processing environment. The protective element may include protective seals, protective structures, erosion resistive fillers, or combinations thereof. Embodiments of the present invention reduce erosion of bonding material used in a processing chamber, thus, improving processing quality and reducing maintenance costs.