公开(公告)号：US20100301340A1

公开(公告)日：2010-12-02

申请号：US12455290

申请日：2009-06-01

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/088 ,  H01L29/786

CPC分类号： H01L29/78609 ,  H01L29/4908

摘要： Thin film transistors and arrays having controlled threshold voltage and improved ION/IOFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase ION/IOFF ratio, which in turn reduce the threshold voltage of the transistor.

摘要翻译： 在本发明中提供具有受控阈值电压和改善的ION / IOFF比的薄膜晶体管和阵列。 在一个实施例中，提供具有具有正固定电荷的高击穿场的第一栅极绝缘体和具有负固定电荷的第二栅极绝缘体的薄膜晶体管; 所述负固定电荷基本上补偿所述正固定电荷，以便降低所述晶体管的阈值电压和OFF状态阈值电压。 在另一个实施例中，提供了具有负固定电荷的第一钝化层的薄膜晶体管，负电荷在相邻的有源沟道中减少了基本上不需要的负电荷，并因此降低了关闭状态电流并增加了ION / IOFF比， 降低晶体管的阈值电压。

公开(公告)号：US20100087967A1

公开(公告)日：2010-04-08

申请号：US12245593

申请日：2008-10-03

申请人： David W. Meyers ,  Long Bui ,  Yi-Chi Shih

发明人： David W. Meyers ,  Long Bui ,  Yi-Chi Shih

IPC分类号： G01S13/93 ,  G05D1/00

CPC分类号： G01S13/9303 ,  G01S13/42 ,  G01S13/426 ,  G01S13/4454 ,  H01Q25/00

摘要： A radar system comprises a plurality of antenna sub-systems, each operable to transmit and receive radio frequency (RF) signals in a corresponding sector, wherein the plurality of antenna sub-systems are positioned such that the corresponding sectors cover a total range of about 180 degrees to about 360 degrees without rotation of the radar system. The radar system also comprises shared backend circuitry coupled to each of the plurality of antenna sub-systems and operable to process signals from each of the plurality of antenna sub-systems to detect the presence of an obstacle in one of the corresponding sectors.

摘要翻译： 雷达系统包括多个天线子系统，每个天线子系统可操作以在对应的扇区中发送和接收射频（RF）信号，其中多个天线子系统被定位成使得对应的扇区覆盖约 180度至360度左右，不会旋转雷达系统。 所述雷达系统还包括耦合到所述多个天线子系统中的每一个的共享后端电路，并且可操作以处理来自所述多个天线子系统中的每一个的信号，以检测相应扇区之一中的障碍物的存在。

公开(公告)号：US20100085235A1

公开(公告)日：2010-04-08

申请号：US12245334

申请日：2008-10-03

申请人： David W. Meyers ,  Long Bui ,  Yi-Chi Shih

发明人： David W. Meyers ,  Long Bui ,  Yi-Chi Shih

IPC分类号： G01S13/93

CPC分类号： G01S13/4454 ,  G01S13/9303 ,  G01S13/931 ,  H01Q25/02

摘要： A radar system comprises a transmitter antenna configured to transmit a radio frequency (RF) signal, a first receiver antenna, and a second receiver antenna. Each of the first and second receiver antennas are configured to receive a reflection of the RF signal, wherein the first and second receiver antennas are synchronized and separated by a vertical distance. The radar system also comprises radar processing circuitry configured to control transmission of the RF signal from the transmitter antenna and to determine an elevation of an object reflecting the RF signal based on the phase difference between the reflected RF signal received by the first receiver antenna and the reflected RF signal received by the second receiver antenna; wherein the transmit antenna, first receiver antenna, and second receiver antenna are operable to continuously rotate 360 degrees along an azimuth angle without rotating along an elevation angle.

摘要翻译： 雷达系统包括被配置为发送射频（RF）信号的发射机天线，第一接收机天线和第二接收机天线。 第一和第二接收机天线中的每一个被配置为接收RF信号的反射，其中第一和第二接收机天线被同步并且被垂直距离分开。 雷达系统还包括雷达处理电路，该雷达处理电路被配置为控制来自发射机天线的RF信号的传输，并且基于由第一接收机天线接收的反射的RF信号与第一接收机天线之间的相位差来确定反射RF信号的物体的高度 由第二接收机天线接收的反射RF信号; 其中所述发射天线，第一接收机天线和第二接收机天线可操作以沿着方位角连续地旋转360度而不沿着仰角旋转。

公开(公告)号：US20100066620A1

公开(公告)日：2010-03-18

申请号：US12211622

申请日：2008-09-16

申请人： Yi-Chi Shih ,  Long Bui ,  Tom Rolfer ,  Kiet Mai ,  Yaozhong Liu

发明人： Yi-Chi Shih ,  Long Bui ,  Tom Rolfer ,  Kiet Mai ,  Yaozhong Liu

IPC分类号： H01Q3/12 ,  H01Q15/14

CPC分类号： H01Q3/18 ,  G01S13/913 ,  H01Q1/281 ,  H01Q3/16 ,  H01Q15/22 ,  H01Q19/193 ,  H01Q19/195

摘要： A reflector assembly implementable in a scanning antenna assembly having a stationary surface includes a support assembly coupled to the stationary surface, a substantially planar first reflector panel coupled to the support assembly so as to enable rotation of the first reflector panel about a central axis of the first reflector panel, and an actuator assembly comprising a translating arm coupled to the first reflector panel, wherein translational motion of the arm is operable to rotate the first reflector panel about the central axis back and forth through a predetermined angular range at a predetermined frequency.

摘要翻译： 可在具有固定表面的扫描天线组件中实施的反射器组件包括联接到固定表面的支撑组件，联接到支撑组件的基本上平面的第一反射器面板，以便能够使第一反射器板围绕 第一反射器面板和包括耦合到第一反射器面板的平移臂的致动器组件，其中臂的平移运动可操作以使第一反射器面板围绕中心轴线以预定频率来回旋转预定角度范围。

公开(公告)号：US20090315638A1

公开(公告)日：2009-12-24

申请号：US12145271

申请日：2008-06-24

申请人： Yi-Chi Shih ,  Kiet Mai ,  Long Bui

发明人： Yi-Chi Shih ,  Kiet Mai ,  Long Bui

IPC分类号： H01P1/10

CPC分类号： H01P1/15

摘要： A switch for selectively providing an input signal to an output terminal. The switch includes a first waveguide terminal, a second waveguide terminal, a reduced-width waveguide connecting the first waveguide terminal to the second waveguide terminal, and at least one switching element spanning the reduced-width waveguide between the first and second waveguide terminals. The reduced-width waveguide is configured to pass a signal from the first waveguide terminal to the second waveguide terminal when the at least one switching element is in a first state and block a signal when the at least one switching element is in a second state. In some embodiments, the switch also includes at least one additional waveguide terminal and the reduced-width waveguide also connects the first waveguide terminal to the at least one additional waveguide terminal.

摘要翻译： 用于选择性地向输出端子提供输入信号的开关。 该开关包括第一波导端子，第二波导端子，将第一波导端子连接到第二波导端子的减小宽度的波导以及横跨第一和第二波导端子之间的窄宽度波导的至少一个开关元件。 所述窄宽度波导被配置为当所述至少一个开关元件处于第一状态时将信号从所述第一波导端子传递到所述第二波导端子，并且当所述至少一个开关元件处于第二状态时阻止信号。 在一些实施例中，开关还包括至少一个额外的波导端子，并且所述减小宽度的波导还将所述第一波导端子连接到所述至少一个附加波导端子。

公开(公告)号：US07211825B2

公开(公告)日：2007-05-01

申请号：US10866267

申请日：2004-06-14

申请人： Yi-Chi Shih ,  Cindy Xing Qiu ,  Ishiang Shih ,  Chunong Qiu

发明人： Yi-Chi Shih ,  Cindy Xing Qiu ,  Ishiang Shih ,  Chunong Qiu

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L29/10 ,  H01L31/00 ,  H01L31/036

CPC分类号： H01L29/7869 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78648

摘要： In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.

摘要翻译： 在电子显示器或成像单元中，通过晶体管阵列来实现像素的控制。 这些晶体管是薄膜形式并且被布置成二维配置以形成开关电路，驱动电路或甚至读出电路。 在本发明中，提供了具有氧化铟基沟道层的薄膜晶体管和电路。 这些薄膜晶体管和电路可以在各种基板上的低温下制造，并具有高电荷载流子迁移率。 除了传统的刚性衬底之外，本发明的薄膜晶体管和电路特别适用于用于电子显示和成像应用的柔性和透明衬底上的制造。 提供了制造具有基于氧化铟的通道的薄膜晶体管的方法。

公开(公告)号：US06363605B1

公开(公告)日：2002-04-02

申请号：US09433318

申请日：1999-11-03

申请人： Yi-Chi Shih ,  Long Q. Bui ,  Tsuneo C. Shishido

发明人： Yi-Chi Shih ,  Long Q. Bui ,  Tsuneo C. Shishido

IPC分类号： H01P1100

CPC分类号： H01P11/00 ,  Y10S29/016 ,  Y10T29/49016 ,  Y10T29/49018 ,  Y10T29/49052 ,  Y10T29/49064

摘要： A method for fabricating precision non-symmetrical L-shape waveguide end-launching probe for launching microwave signals in both vertical and horizontal polarizations is disclosed. The L-shape waveguide probe is in a form of thin plate, has a first arm and a second arm, and is precisely fabricated and attached to one end of the central metal pin of a feedthrough. The feedthrough is installed to an aperture formed in a major wall of the universal conductive housing to achieve hermetic sealing. The L-shape waveguide probe is aligned by means of a specially designed alignment tool so that long axis of the second arm is always perpendicular to the broad walls of the output waveguide, which is mounted to the universal housing with the broad walls of the output waveguide either horizontally or vertically. Hence, in this invention, an end-launching arrangement using the L-shape probes that could yield a flexible waveguide interface either in horizontal polarization or vertical polarization is provided. The impedance matching and frequency bandwidth may be adjusted by controlling dimensions and positions of the L-shape probe. A plurality of the thin plate L-shape waveguide probes is fabricated by a micro lithography and etching method to ensure reproducibility and reliability. By incorporating with an impedance transformation section having a slot, broad band performance is achieved using the L-shape waveguide probe.

摘要翻译： 公开了一种用于在垂直和水平偏振中发射微波信号的精确非对称L形波导终端探测器的制造方法。 L型波导探针是薄板形式，具有第一臂和第二臂，并精确地制造并附接到馈通的中心金属销的一端。 馈通被安装到形成在通用导电壳体的主壁中的孔以实现气密密封。 L型波导探针通过特别设计的对准工具对准，使得第二臂的长轴总是垂直于输出波导的宽壁，其输出波导壁安装到通用壳体 波导水平或垂直。 因此，在本发明中，提供了使用可以在水平极化或垂直极化中产生柔性波导接口的L形探针的终端发射装置。 可以通过控制L形探针的尺寸和位置来调整阻抗匹配和频率带宽。 通过微光刻和蚀刻方法制造多个薄板L形波导探针，以确保重现性和可靠性。 通过与具有时隙的阻抗变换部分结合，使用L形波导探针实现宽带性能。

公开(公告)号：US5283452A

公开(公告)日：1994-02-01

申请号：US837448

申请日：1992-02-14

申请人： Yi-Chi Shih ,  David C. Wang ,  Huy M. Le ,  Vincent Hwang ,  Tom Y. Chi

发明人： Yi-Chi Shih ,  David C. Wang ,  Huy M. Le ,  Vincent Hwang ,  Tom Y. Chi

IPC分类号： H01L29/417 ,  H01L29/812

CPC分类号： H01L29/41758

摘要： A distributed cell field-effect transistor (FET) amplifier (40) includes a plurality of parallel, elongated source (46a) and drain (46b) regions of individual FET unit cells (46) formed in a substrate (42) in transverse alternating relation, with a plurality of elongated channel regions (46c) being formed between and parallel to adjacent source (46a) and drain (46b) regions respectively. A source foot (48) and a drain foot (50) extend perpendicular to the source (46a) and drain (46b) regions on opposite longitudinally spaced sides thereof respectively. A gate foot (52) extends parallel to the source (48) and drain (50) feet, between the source foot (48) and the cells (46). Source (54) and drain (56) pads and gate (58) fingers extend from the source (48), drain (50) and gate (52) feet into electrical connection with the respective source (46a), drain (46b) and gate ( 46c) regions respectively. The source pads (54) include airbridge portions (54b) which extend over the gate foot (52) without making contact therewith. A fixed tuning circuit (70) is connected between the gate foot (52) and source foot (48), including an inductive stub (72) having a first end connected to the gate foot (52) and a second end, and a capacitor (74) having a first plate (74a) which is integral with the source foot (48) and a second plate connected to the second end of the stub (72). The integration of the capacitor (74) with the source foot (48) enables the amplifier (40) to be tuned at the gate foot (52), thereby eliminating undesirable coupling effects and the need for a separate via for the tuning circuit (70).

摘要翻译： 分布式单元场效应晶体管（FET）放大器（40）包括以横向交替关系形成在基板（42）中的单个FET单元（46）的多个平行细长源（46a）和漏极（46b） ，其中多个细长沟道区（46c）分别形成在平行于相邻源（46a）和漏极（46b）之间并且平行于漏极（46b）区域。 源脚（48）和排水脚（50）分别垂直于源（46a）和相对的纵向间隔开的排出（46b）区域延伸。 门脚（52）平行于源脚（48）和细胞（46）之间的源极（48）和漏极（50）脚延伸。 源极（54）和漏极（56）焊盘和栅极（58）指状物从源极（48），漏极（50）和栅极（52）脚延伸到与相应源极（46a），漏极（46b）和 门（46c）区域。 源极焊盘（54）包括在栅极（52）上延伸而不与其接触的气桥部分（54b）。 固定调谐电路（70）连接在栅极脚（52）和源脚（48）之间，包括具有连接到栅极脚（52）的第一端和第二端的电感短截线（72），以及电容器 （74）具有与源脚（48）成一体的第一板（74a）和连接到短截线（72）的第二端的第二板。 电容器（74）与源极（48）的集成使得放大器（40）能够在栅极脚（52）处被调谐，从而消除不期望的耦合效应，并且需要用于调谐电路（70）的单独的通孔 ）。

公开(公告)号：US20190393860A1

公开(公告)日：2019-12-26

申请号：US15998066

申请日：2018-06-25

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/56 ,  H03H9/17 ,  H03H9/13 ,  H03H9/02

摘要： The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

公开(公告)号：US20170366165A1

公开(公告)日：2017-12-21

申请号：US14999711

申请日：2016-06-20

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/64

CPC分类号： H03H9/145 ,  H03H9/02614 ,  H03H9/02976 ,  H03H9/14538 ,  H03H9/25 ,  H03H9/64 ,  H03H2009/02165

摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.