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    Metal oxynitride transistor devices
    2.
    发明申请
    Metal oxynitride transistor devices 审中-公开
    金属氮氧化物晶体管器件

    公开(公告)号：US20160308067A1

    公开(公告)日：2016-10-20

    申请号：US14545285

    申请日：2015-04-17

    申请人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

    发明人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

    IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/417

    CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

    摘要： A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.

    摘要翻译： 提供了具有第一金属氧氮化物沟道层或第一金属氧化物沟道层的薄膜晶体管，以在底表面区域，中心沟道区域和顶表面区域中具有受控的沟道掺杂浓度，使得底表面 区域和中心沟道区域之间以及顶表面区域和中心沟道区域之间的区域大于第一阈值掺杂比并且小于第二阈值掺杂比，以便在第一沟道层中保持更均匀的载流子迁移率值，并且 提高薄膜晶体管器件的性能。

    Tunable film bulk acoustic resonators and filters
    6.
    发明授权
    Tunable film bulk acoustic resonators and filters 有权

    公开(公告)号：US10312882B2

    公开(公告)日：2019-06-04

    申请号：US14756018

    申请日：2015-07-22

    申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    IPC分类号： H03H3/04 ,  H03H9/00 ,  H03H9/02 ,  H03H9/17 ,  H03H9/56 ,  H03H9/58 ,  H01P1/201

    摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.

    Tunable film bulk acoustic resonators and filters
    8.
    发明申请
    Tunable film bulk acoustic resonators and filters 审中-公开
    可调薄膜体声共振器和滤波器

    公开(公告)号：US20170025596A1

    公开(公告)日：2017-01-26

    申请号：US14756018

    申请日：2015-07-22

    申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

    IPC分类号： H03H9/00 ,  H01L41/047 ,  H01L41/107 ,  H01L41/083 ,  H01P1/201

    CPC分类号： H01P1/201 ,  H03H9/0014 ,  H03H9/173 ,  H03H9/568 ,  H03H9/583 ,  H03H2003/0464 ,  H03H2009/02196

    摘要： In wireless communications, many radio frequency bands are used. For each frequency band, there are two frequencies, one for transmitting and the other for receiving. As the band widths are small and separation between adjacent bands is also small, many band pass filters with different band pass frequencies are required for each communication unit such as mobile handset. The invention provides tunable film bulk acoustic resonators TFBARs containing semiconducting piezoelectric layers and methods for tuning and adjusting the resonant properties. When a DC biasing voltage is varied, both the depletion region thickness and neutral region thickness associated in the semiconducting piezoelectric layers varies leading to changes in equivalent capacitances, inductance and resistances and hence the resonance properties and frequencies. A plurality of the present TFBARs are connected into a tunable oscillator or a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency by varying the biasing voltages.

    摘要翻译： 在无线通信中，使用许多无线电频带。 对于每个频带，有两个频率，一个用于发射，另一个用于接收。 由于带宽小，相邻带之间的间隔也较小，所以对于诸如移动手持机的每个通信单元，需要许多具有不同带通频带的带通滤波器。 本发明提供了可调谐的膜体声波谐振器，包含半导体压电层的TFBAR和用于调谐和调节谐振特性的方法。 当DC偏置电压变化时，在半导体压电层中相关的耗尽区厚度和中性区厚度都变化导致等效电容，电感和电阻以及共振特性和频率的变化。 多个本TFBAR连接到可调谐振荡器或可调谐和可选择的微波滤波器中，用于通过改变偏置电压来选择和调整带通频率。