公开(公告)号：US20080198648A1

公开(公告)日：2008-08-21

申请号：US11762085

申请日：2007-06-13

Applicant: Yuan-Jen Lee ,  Ming-Jer Kao

Inventor： Yuan-Jen Lee ,  Ming-Jer Kao

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: A writing method for a magnetic memory cell which has a magnetic free stack layer with a bi-directional easy axis. A magnetic X axis and a magnetic Y axis are taken as reference directions, and the bi-directional easy axis is substantially on the magnetic X axis. The method includes applying a first magnetic field in a first direction of the magnetic Y axis. Then, a second magnetic field added onto the first magnetic field is applied in a first direction of the magnetic X axis. Next, the application of the first magnetic field is terminated. Thereafter, a third magnetic field is applied on the magnetic Y axis in a second direction opposite to the first direction. The second magnetic field is terminated and the third magnetic field is terminated.

Abstract translation: 一种具有双向易轴的无磁性堆叠层的磁存储单元的写入方法。 磁X轴和磁Y轴作为基准方向，双向易轴基本上在磁X轴上。 该方法包括在磁性Y轴的第一方向上施加第一磁场。 然后，在磁性X轴的第一方向施加添加到第一磁场上的第二磁场。 接下来，终止第一磁场的施加。 此后，在与第一方向相反的第二方向上的磁性Y轴上施加第三磁场。 第二磁场终止，第三磁场终止。

公开(公告)号：US07372724B2

公开(公告)日：2008-05-13

申请号：US11468302

申请日：2006-08-30

Applicant: Yuan-Jen Lee ,  Chien-Chung Hung

Inventor： Yuan-Jen Lee ,  Chien-Chung Hung

IPC: G11C7/00

CPC classification number: G11C11/16

Abstract: A method for accessing data on a magnetic memory is provided, wherein the data is accessed in a toggle mode. A first current line and a second current line are used for providing operation currents. The data accessing method includes a data changing operation for changing a data stored in a magnetic memory cell. During a first stage, a current in a first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line. During a stage before stopping supplying magnetic field, a current in the first direction is supplied to the first current line, and a current in the first direction is simultaneously supplied to the second current line to offset at least a portion of the biased magnetic field.

Abstract translation: 提供了一种访问磁存储器上的数据的方法，其中以切换模式访问数据。 第一电流线和第二电流线用于提供工作电流。 数据访问方法包括用于改变存储在磁存储单元中的数据的数据改变操​​作。 在第一阶段期间，向第一电流线提供沿第一方向的电流，同时向第二电流线提供第一方向的电流。 在停止提供磁场的阶段期间，将第一方向上的电流提供给第一电流线，并且将第一方向上的电流同时提供给第二电流线以偏置偏置磁场的至少一部分。

公开(公告)号：US20070242501A1

公开(公告)日：2007-10-18

申请号：US11465460

申请日：2006-08-18

Applicant: Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

Inventor： Chien-Chung Hung ,  Yung-Hsiang Chen ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Yung-Hung Wang

IPC: G11C11/00

CPC classification number: G11C11/16

Abstract: A magnetic memory cell, used in a magnetic memory device, includes a stacked magnetic pinned layer, serving as a part of the base structure. The stacked magnetic pinned stacked layer has a top pinned layer and a bottom pinned layer, between which there is a sufficient large magnetic coupling force to maintain magnetization of the top pinned layer on a reference direction. A tunnel barrier layer is disposed on the stacked magnetic pinned layer. A magnetic free stacked layer is disposed on the tunnel barrier layer. The magnetic free stacked layer includes a bottom free layer having a bottom magnetization and a top free layer having a top magnetization. When no assisted magnetic field is applied, the bottom magnetization is anti-parallel to the top magnetization and is perpendicular to the reference direction on the top pinned layer. A magnetic bias layer can be also disposed on the top free layer.

Abstract translation: 在磁存储器件中使用的磁存储单元包括用作基础结构的一部分的层叠磁性固定层。 堆叠的磁性钉扎堆叠层具有顶部被钉扎层和底部被钉扎层，在其之间存在足够大的磁耦合力以保持顶部钉扎层在参考方向上的磁化。 隧道势垒层设置在堆叠的磁性钉扎层上。 无磁性堆叠层设置在隧道势垒层上。 无磁性堆叠层包括具有底部磁化的底部自由层和具有顶部磁化强度的顶部自由层。 当没有施加辅助磁场时，底部磁化与顶部磁化反平行并且垂直于顶部被钉扎层上的参考方向。 磁偏置层也可以设置在顶部自由层上。

公开(公告)号：US20070171704A1

公开(公告)日：2007-07-26

申请号：US11581466

申请日：2006-10-17

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

IPC: G11C11/00 ,  G11C8/00

CPC classification number: G11C11/16 ,  G11C8/04 ,  G11C11/5607 ,  G11C19/00

Abstract: A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

Abstract translation: 一种用于访问磁阻随机存取存储器（MRAM）器件的存储单元的方法，其中存储器单元包括多个存储器单元，包括通过识别其中存储有与基准不同的基准的存储器单元来写入存储器单元 写入; 并同时写入所有存储单元。 MRAM装置包括多个写字线，多个写位线和多个存储器单元。 每个存储单元包括多个存储单元。 每个存储单元包括具有一个或多个容易轴的自由磁区，该易磁轴与写位线非垂直并且非垂直于写字线，固定磁区和自由磁区与固定磁之间的隧道势垒 地区。

公开(公告)号：US07577017B2

公开(公告)日：2009-08-18

申请号：US11581466

申请日：2006-10-17

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C8/04 ,  G11C11/5607 ,  G11C19/00

Abstract: A method for accessing a memory cell of a magnetoresistive random access memory (MRAM) device, where the memory cell includes a plurality of memory units, includes writing the memory cell by identifying ones of the memory units having stored therein a datum different from a datum to be written thereto; and simultaneously writing all of the ones of the memory units. An MRAM device includes a plurality of write word lines, a plurality of write bit lines, and a plurality of memory cells. Each memory cell includes a plurality of memory units. Each memory unit includes a free magnetic region having one or more easy axes non-perpendicular to the write bit lines and non-perpendicular to the write word lines, a pinned magnetic region, and a tunneling barrier between the free magnetic region and the pinned magnetic region.

Abstract translation: 一种用于访问磁阻随机存取存储器（MRAM）器件的存储单元的方法，其中存储器单元包括多个存储器单元，包括通过识别其中存储有与基准不同的基准的存储器单元来写入存储器单元 写入; 并同时写入所有存储单元。 MRAM装置包括多个写字线，多个写位线和多个存储器单元。 每个存储单元包括多个存储单元。 每个存储单元包括具有一个或多个容易轴的自由磁区，该易磁轴与写位线非垂直并且非垂直于写字线，固定磁区和自由磁区与固定磁之间的隧道势垒 地区。

公开(公告)号：US20080298119A1

公开(公告)日：2008-12-04

申请号：US11853818

申请日：2007-09-12

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/5607 ,  Y10S977/935

Abstract: A multi-bit magnetic memory cell in a stacked structure controlled by at least one read bit line and one read word line is provided. The multi-bit magnetic memory cell includes at least two magnetic memory units and a switching device. Each magnetic memory unit has a magneto-resistance value and at least the two magnetic memory units are stacked to form a circuit of serial connection or parallel connection. The circuit and the read bit line are connected. The switching device is connected to the circuit, wherein the switching device is controlled by the read word line to be conducting or non-conducting so as to connect the circuit with a ground voltage. Furthermore, a plurality of the multi-bit magnetic cells is used to form a magnetic memory device.

Abstract translation: 提供了由至少一个读位线和一个读字线控制的堆叠结构中的多位磁存储单元。 多位磁存储单元包括至少两个磁存储单元和开关器件。 每个磁存储器单元具有磁阻值，并且至少两个磁存储器单元被堆叠以形成串联或并联的电路。 电路和读位线相连。 开关装置连接到电路，其中开关装置由读取的字线控制为导通或不导通，以将电路与接地电压连接。 此外，使用多个多位磁单元来形成磁存储器件。

公开(公告)号：US07420837B2

公开(公告)日：2008-09-02

申请号：US11338653

申请日：2006-01-25

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee ,  Lien-Chang Wang

IPC: G11C11/00

CPC classification number: G11C11/1693 ,  G11C11/1673 ,  G11C11/1675

Abstract: A method for writing a memory cell of a magnetoresistive random access memory (MRAM) device includes, sequentially, providing a first magnetic field in a first direction, providing a second magnetic field in a second direction substantially perpendicular to the first direction, turning off the first magnetic field, providing a third magnetic field in a third direction opposite to the first direction, turning off the second magnetic field, and turning off the third magnetic field. A method for switching magnetic moments in an MRAM memory cell includes providing a magnetic field in a direction forming a blunt angle with a direction of a bias magnetic field. A method for reading an MRAM device includes partially switching magnetic moments in a reference memory cell to generate a reference current; measuring a read current through a memory cell to be read; and comparing the read current with the reference current.

Abstract translation: 用于写入磁阻随机存取存储器（MRAM）器件的存储单元的方法包括：依次在第一方向上提供第一磁场，在基本上垂直于第一方向的第二方向上提供第二磁场， 第一磁场，在与第一方向相反的第三方向上提供第三磁场，关闭第二磁场，并且关闭第三磁场。 用于切换MRAM存储单元中的磁矩的方法包括在与偏置磁场的方向形成钝角的方向上提供磁场。 一种用于读取MRAM器件的方法包括部分地转换参考存储器单元中的磁矩以产生参考电流; 测量要读取的存储单元的读取电流; 并将读取的电流与参考电流进行比较。

公开(公告)号：US07208808B2

公开(公告)日：2007-04-24

申请号：US11159137

申请日：2005-06-23

Applicant: Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

Inventor： Yuan-Jen Lee ,  Yung-Hsiang Chen ,  Wei-Chuan Chen ,  Ming-Jer Kao ,  Lien-Chang Wang

IPC: H01L29/82 ,  H01L43/00 ,  H01L27/14 ,  H01L29/84 ,  H01L31/111

CPC classification number: G11C11/16 ,  B82Y25/00 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08

Abstract: A magnetic random access memory with lower switching field is provided. The memory includes a first antiferromagnetic layer, a pinned layer formed on the first antiferromagnetic layer, a tunnel barrier layer formed on the pinned layer, a ferromagnetic free layer formed on the tunnel barrier layer, and a multi-layered metal layer. The multi-layered metal layer is formed by at least one metal layer, where the direction of the anisotropy axis of the antiferromagnetic layer and the ferromagnetic layer and that of the ferromagnetic free layer are arranged orthogonally. The provided memory has the advantage of lowering the switching field of the ferromagnetic layer, and further lowering the writing current.

Abstract translation: 提供具有较低开关电场的磁性随机存取存储器。 存储器包括第一反铁磁层，形成在第一反铁磁层上的钉扎层，形成在钉扎层上的隧道势垒层，形成在隧道势垒层上的铁磁自由层，以及多层金属层。 多层金属层由至少一个金属层形成，其中反铁磁层和铁磁层的各向异性轴的方向和铁磁性层的各向异性轴的方向被正交布置。 提供的存储器具有降低铁磁层的开关场的优点，并进一步降低写入电流。

公开(公告)号：US07577019B2

公开(公告)日：2009-08-18

申请号：US11853818

申请日：2007-09-12

Applicant: Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

Inventor： Chien-Chung Hung ,  Ming-Jer Kao ,  Yuan-Jen Lee

IPC: G11C11/00

CPC classification number: G11C11/16 ,  G11C11/5607 ,  Y10S977/935

Abstract: A multi-bit magnetic memory cell in a stacked structure controlled by at least one read bit line and one read word line is provided. The multi-bit magnetic memory cell includes at least two magnetic memory units and a switching device. Each magnetic memory unit has a magneto-resistance value and at least the two magnetic memory units are stacked to form a circuit of serial connection or parallel connection. The circuit and the read bit line are connected. The switching device is connected to the circuit, wherein the switching device is controlled by the read word line to be conducting or non-conducting so as to connect the circuit with a ground voltage. Furthermore, a plurality of the multi-bit magnetic cells is used to form a magnetic memory device.

Abstract translation: 提供了由至少一个读位线和一个读字线控制的堆叠结构中的多位磁存储单元。 多位磁存储单元包括至少两个磁存储单元和开关器件。 每个磁存储器单元具有磁阻值，并且至少两个磁存储器单元被堆叠以形成串联或并联的电路。 电路和读位线相连。 开关装置连接到电路，其中开关装置由读取的字线控制为导通或不导通，以将电路与接地电压连接。 此外，使用多个多位磁单元来形成磁存储器件。

公开(公告)号：US07515462B2

公开(公告)日：2009-04-07

申请号：US11762085

申请日：2007-06-13

Applicant: Yuan-Jen Lee ,  Ming-Jer Kao

Inventor： Yuan-Jen Lee ,  Ming-Jer Kao

IPC: G11C11/14

CPC classification number: G11C11/16

Abstract: A writing method for a magnetic memory cell which has a magnetic free stack layer with a bi-directional easy axis. A magnetic X axis and a magnetic Y axis are taken as reference directions, and the bi-directional easy axis is substantially on the magnetic X axis. The method includes applying a first magnetic field in a first direction of the magnetic Y axis. Then, a second magnetic field added onto the first magnetic field is applied in a first direction of the magnetic X axis. Next, the application of the first magnetic field is terminated. Thereafter, a third magnetic field is applied on the magnetic Y axis in a second direction opposite to the first direction. The second magnetic field is terminated and the third magnetic field is terminated.

Abstract translation: 一种具有双向易轴的无磁性堆叠层的磁存储单元的写入方法。 磁X轴和磁Y轴作为基准方向，双向易轴基本上在磁X轴上。 该方法包括在磁性Y轴的第一方向施加第一磁场。 然后，在磁性X轴的第一方向施加添加到第一磁场上的第二磁场。 接下来，终止第一磁场的施加。 此后，在与第一方向相反的第二方向上的磁性Y轴上施加第三磁场。 第二磁场终止，第三磁场终止。