公开(公告)号：US20200013954A1

公开(公告)日：2020-01-09

申请号：US16572521

申请日：2019-09-16

Applicant: Arm Limited

Inventor： Lucian Shifren ,  Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Christopher Randolph McWilliams

IPC: H01L45/00

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may comprise depositing metal layers, such layers of a transition metal, over a conductive substrate. Dopant layers may subsequently be deposited on the layers of the transition metal, followed by annealing of the layers of transition metal and dopant layers. Responsive to annealing, dopant from the dopant layers may diffuse into the one or more layers of transition metal, thereby forming a CEM.

公开(公告)号：US20200052206A1

公开(公告)日：2020-02-13

申请号：US16057515

申请日：2018-08-07

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Lucian Shifren

IPC: H01L45/00 ,  C23C16/455 ,  C23C16/30 ,  C23C16/40

Abstract: A method for the manufacture of a correlated electron material device which method comprises forming a conductive substrate and forming a layer of a correlated electron material on the conductive substrate, wherein the forming of the correlated electron material layer comprises: forming a layer of a metal rich transition or other metal compound; and annealing the layer of the metal rich transition or other metal compound in an atmosphere containing a gaseous precursor for an electron-back donating extrinsic ligand capable of occupying an anion vacancy within the transition or other metal compound; wherein the annealing provides that an anion vacancy within the transition or other metal compound is occupied by an electron back-donating extrinsic ligand; and wherein the annealing is carried out at a predetermined temperature and for a predetermined time whereby to activate electron back-donation from a transition or other metal cation to the electron back-donating extrinsic ligand occupying the anion vacancy.

公开(公告)号：US20190198758A1

公开(公告)日：2019-06-27

申请号：US16284932

申请日：2019-02-25

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Christopher Randolph McWilliams ,  Lucian Shifren ,  Kimberly Gay Reid

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1633 ,  H01L45/1641 ,  H01L45/1658

Abstract: Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

公开(公告)号：US20190157555A1

公开(公告)日：2019-05-23

申请号：US16259917

申请日：2019-01-28

Applicant: Arm Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Kimberly Gay Reid ,  Lucian Shifren

IPC: H01L45/00 ,  H01L27/24

Abstract: Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

公开(公告)号：US10121967B2

公开(公告)日：2018-11-06

申请号：US15363216

申请日：2016-11-29

Applicant: ARM Limited

Inventor： Carlos Alberto Paz de Araujo ,  Jolanta Bozena Celinska ,  Kimberly Gay Reid ,  Lucian Shifren

IPC: H01L45/00 ,  C23C14/00 ,  C23C14/16 ,  C23C16/455 ,  C23C16/50

Abstract: Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.